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Surname: 
Giannazzo
Firstname: 
Filippo
Position: 
Staff
Profile: 
Senior Researcher
Phone: 
+39 0955968242
Activity: 

Filippo Giannazzo was born in Enna (Italy) in 1974. He received the Laurea in Physics and the PhD in Materials Science from the University of Catania, in 1998 and 2002, respectively. He joined CNR-IMM as a researcher in 2006 and is senior researcher from 2010.

His research interests cover the following aspects of materials science and nanotechnology:

(i) Scanning probe microscopy methods (CAFM, SCM, SSRM) for the characterization of charge transport properties in advanced materials for micro and nanoelectronics, including wide-band gap semiconductors, semiconductor heterostructures, nanostructured metal films, dielectrics, organics, graphene and other 2D materials.

(ii) Integration of graphene and other 2D materials for advanced electronics applications (high frequency, low power dissipation).

He authored or co-authored more than 260 papers and 6 book chapters in these research fields (H-index=34, >3300 citations, source Scopus 2018). He is co-author of an international patent. He delivered several invited talks in national and international conferences.

He has been involved in several National and EU projects, and is currently coordinating the project “GraNitE: Graphene heterostructures with Nitrides for high frequency Electronics” in the framework of the FlagERA program (2016-2018).

He has been co-chair of two EMRS symposia (Symp. D at EMRS-Fall 2010 and Symp. J of EMRS-Fall 2012), co-organizer of the 3rd edition of the “International School of Physics and Technology of Matter” in Otranto (September 2014). Furthermore, he has been in the organizing committee of several international conferences (HETEROSIC09, WASMPE09, WOCSDICE 2011, ICSCRM 2015).

He holds national and international collaborations with academic institutions  (University of Catania and Palermo; University of Tours, France; University of Montpellier, France; University of Erlangen, Germany; CNRS-CRHEA, France; University of Linkoping, Sweden; HAS, Budapest, Hungary) and industries (STMicroelectronics, Italy; Centrotherm, Germany; Graphenea, Spain; TopGaN, Poland).

In 2004 he was awarded with the SISM award from the Società Italiana di Scienze Microscopiche, and in 2014 with the “Giovan Pietro Grimaldi” award for Physics from the Accademia Gioenia and University of Catania.

Source: 

Scientific Productions

Angelo Armano, Gianpiero Buscarino, Marco Cannas, Franco Mario Gelardi, Filippo Giannazzo, Emanuela Schilirò, Raffaella Lo Nigro, Simonpietro Agnello

Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Carbon [Pergamon], Volume: 149 Pages: 546-555

Emanuela Schilirò, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, Fabrizio Roccaforte, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Marcin Krysko, Adrien Michon, Yvon Cordier, Ildiko Cora, Bela Pecz, Hassan Gargouri, Raffaella Lo Nigro

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39

S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, S Di Franco, F Giannazzo, G Greco, F Roccaforte, M Saggio

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66

Ivan Shtepliuk, Ivan G Ivanov, Tihomir Iakimov, Rositsa Yakimova, Anelia Kakanakova-Georgieva, Patrick Fiorenza, Filippo Giannazzo

Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 96 Pages: 145-152

Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Angelo Armano, Simonpietro Agnello, Bela Pecz, Ivan G Ivanov, Rositsa Yakimova, Filippo Giannazzo

Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097

F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, F Iucolano, G Greco

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170

F Giannazzo, Ivan Shtepliuk, Ivan Gueorguiev Ivanov, Tihomir Iakimov, A Kakanakova-Georgieva, E Schilirò, P Fiorenza, Rositsa Yakimova

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy.

Nanotechnology [IOP Publishing], Volume: 30 Issue: 28 Pages: 284003

Pawel Prystawko, F Giannazzo, M Krysko, J Smalc-Koziorowska, E Schilirò, G Greco, F Roccaforte, M Leszczynski

Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157

M Spera, D Corso, S Di Franco, G Greco, A Severino, P Fiorenza, F Giannazzo, F Roccaforte

Effect of high temperature annealing (T> 1650° C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279

M Spera, G Greco, R Lo Nigro, C Bongiorno, F Giannazzo, M Zielinski, F La Via, F Roccaforte

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298

Alessandra Alberti, Ioannis Deretzis, Giovanni Mannino, Emanuele Smecca, Filippo Giannazzo, Andrea Listorti, Silvia Colella, Sofia Masi, Antonino La Magna

Nitrogen Soaking Promotes Lattice Recovery in Polycrystalline Hybrid Perovskites

Advanced Energy Materials [], Pages: 1803450

Giuliana Faggio, Andrea Gnisci, Giacomo Messina, Nicola Lisi, Andrea Capasso, Gwan Hyoung Lee, Angelo Armano, Alice Sciortino, Fabrizio Messina, Marco Cannas, Franco Mario Gelardi, Emanuela Schilirò, Filippo Giannazzo, Simonpietro Agnello

Carbon Dots Dispersed on Graphene/SiO2/Si: A Morphological Study

physica status solidi (a) [], Volume: 216 Issue: 3 Pages: 1800559

Angelo Armano, Gianpiero Buscarino, Marco Cannas, Franco Mario Gelardi, Filippo Giannazzo, Emanuela Schiliró, Raffaella Lo Nigro, Simonpietro Agnello

Graphene‐SiO2 Interaction from Composites to Doping

physica status solidi (a) [], Volume: 216 Issue: 3 Pages: 1800540

Filippo Giannazzo

Engineering 2D heterojunctions with dielectrics

Nature Electronics [Nature Publishing Group], Volume: 2 Issue: 2 Pages: 54

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Silvia Scalese, Corrado Bongiorno, Marco Cannas, Filippo Giannazzo, Fabrizio Roccaforte

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655

A Armano, G Buscarino, F Messina, A Sciortino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, S Agnello

Photoinduced charge transfer from Carbon Dots to Graphene in solid composite

Thin Solid Films [Elsevier], Volume: 669 Pages: 620-624

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

Riv. Nuovo Cim [], Volume: 41 Pages: 625-681

A Armano, G Buscarino, F Messina, A Sciortino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, S Agnello

Photoinduced charge transfer from Carbon Dots to Graphene in solid composite

Thin Solid Films [Elsevier],

F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunà, M Saggio

Schottky Contacts to Silicon Carbide: Physics, Technology and Applications

Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications [Materials Research Forum LLC], Volume: 37 Pages: 127

Rositsa Yakimova, Andras Kovacs, Anelia Kakanakova, Filippo Giannazzo, Bela Pecz

Interfacing Graphene with III-Nitrides for Power Device Applications

Meeting Abstracts [The Electrochemical Society], Issue: 38 Pages: 1281-1281

F Giannazzo, G Greco, E Schilirò, S Di Franco, I Deretzis, G Nicotra, A La Magna, F Roccaforte

Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications

AIP Conference Proceedings [AIP Publishing], Volume: 1990 Issue: 1 Pages: 020008

Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte

Electron trapping at SiO 2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ferdinando Iucolano, Ildiko Cora, Bela Pecz, Fabrizio Roccaforte

Barrier inhomogeneity of Ni Schottky contacts to bulk GaN

physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors

physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653

A Armano, G Buscarino, M Cannas, FM Gelardi, F Giannazzo, E Schiliro, S Agnello

Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere

Carbon [Pergamon], Volume: 127 Pages: 270-279

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon],

A Armano, G Buscarino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, S Agnello

Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere

Carbon [Pergamon],

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Filippo Giannazzo, Fabrizio Roccaforte

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390

G Greco, S Di Franco, F Iucolano, F Giannazzo, F Roccaforte

Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2

Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],

Sijia Gu, Xin Zhou, Tianjun Lin, Henri Happy, Tuami Lasri

Broadband non-contact characterization of epitaxial graphene by near-field microwave microscopy

Nanotechnology [IOP Publishing], Volume: 28 Issue: 33 Pages: 335702

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Giuseppe Nicotra, Corrado Spinella, Michelangelo Scopelliti, Bruno Pignataro, Simonpietro Agnello, Fabrizio Roccaforte

Ambipolar MoS2 transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174

Chamseddine Bouhafs, AA Zakharov, Ivan Gueorguiev Ivanov, F Giannazzo, Jens Eriksson, Vallery Stanishev, P Kühne, Tihomir Iakimov, Tino Hofmann, Mathias Schubert, F Roccaforte, Rositsa Yakimova, Vanya Darakchieva

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Carbon [Pergamon], Volume: 116 Pages: 722-732

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, Rositsa Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460

Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo

Advances in the fabrication of graphene transistors on flexible substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474

Gabriele Fisichella, Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O2-controlled atmosphere

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424

Giuseppe Greco, Filippo Giannazzo, Fabrizio Roccaforte

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of Applied Physics [AIP Publishing], Volume: 121 Issue: 4 Pages: 045701

Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263

Rachela G Milazzo, Antonio M Mio, Giuseppe D’Arrigo, Emanuele Smecca, Alessandra Alberti, Gabriele Fisichella, Filippo Giannazzo, Corrado Spinella, Emanuele Rimini

Influence of hydrofluoric acid treatment on electroless deposition of Au clusters

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 183-189

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [AVS], Volume: 35 Issue: 1 Pages: 01A101

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

physica status solidi (a) [],

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ildikó Cora, Béla Pécz

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6

Rositsa Yakimova, Ivan G Ivanov, Lasse Vines, Margareta K Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 6 Issue: 10 Pages: P741-P745

T Sledziewski, M Vivona, K Alassaad, Pawel Kwasnicki, R Arvinte, S Beljakowa, HB Weber, F Giannazzo, Herve Peyre, V Souliere, T Chassagne, M Zielinski, Sandrine Juillaguet, G Ferro, F Roccaforte, M Krieger

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Journal of Applied Physics [AIP Publishing], Volume: 120 Issue: 20 Pages: 205701

F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, F Roccaforte

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Bruno Pignataro, Michelangelo Scopelliti, Simonpietro Agnello

Substrate and atmosphere influence on oxygen p-doped graphene

Carbon [Pergamon], Volume: 107 Pages: 696-704

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [],

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

Effect of air on oxygen p‐doped graphene on SiO2

physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344

F Giannazzo, G Fisichella, G Greco, F Roccaforte

Challenges in graphene integration for high-frequency electronics

AIP Conference Proceedings [AIP Publishing], Volume: 1749 Issue: 1 Pages: 020004

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Fabrizio Roccaforte

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H–SiC interfaces

Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701

F Giannazzo, G Fisichella, A Piazza, S Di Franco, IP Oliveri, S Agnello, F Roccaforte

Current injection from metal to MoS 2 probed at nanoscale by conductive atomic force microscopy

Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 174-178

Filippo Giannazzo

Insight into the mechanisms of chemical doping of graphene on silicon carbide

Nanotechnology [IOP Publishing], Volume: 27 Issue: 7 Pages: 072502

Alessandra Alberti, Ioannis Deretzis, Giovanna Pellegrino, Corrado Bongiorno, Emanuele Smecca, Giovanni Mannino, Filippo Giannazzo, Guglielmo Guido Condorelli, Nobuya Sakai, Tsutomu Miyasaka, Corrado Spinella, Antonino La Magna

Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum

ChemPhysChem [WILEY‐VCH Verlag], Volume: 16 Issue: 14 Pages: 3064-3071

A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, F Roccaforte, M Cannas, FM Gelardi, S Agnello

Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere

The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723

F Giannazzo, G Fisichella, A Piazza, S Agnello, F Roccaforte

Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS 2 multilayers

Physical Review B [American Physical Society], Volume: 92 Issue: 8 Pages: 081307

Rosaria A Puglisi, Sebastiano Caccamo, Luisa D'Urso, Gabriele Fisichella, Filippo Giannazzo, Markus Italia, Antonino La Magna

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

physica status solidi (a) [], Volume: 212 Issue: 8 Pages: 1685-1694

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Filippo Giannazzo, Pawel Prystawko, Piotr Kruszewski, Marcin Krysko, Ewa Grzanka, Michał Leszczynski, Cristina Tudisco, Guglielmo Guido Condorelli, Fabrizio Roccaforte

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098

G Nicotra, I Deretzis, M Scuderi, C Spinella, P Longo, Rositsa Yakimova, F Giannazzo, A La Magna

Interface disorder probed at the atomic scale for graphene grown on the C face of SiC

Physical Review B [American Physical Society], Volume: 91 Issue: 15 Pages: 155411

I Deretzis, A Alberti, G Pellegrino, E Smecca, F Giannazzo, A La Magna, N Sakai, T Miyasaka

Atomistic origins of CH {sub 3} NH {sub 3} PbI {sub 3} degradation to PbI {sub 2} in vacuum

Applied Physics Letters [], Volume: 106 Issue: 13

I Deretzis, A Alberti, G Pellegrino, E Smecca, F Giannazzo, N Sakai, T Miyasaka, A La Magna

Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum

Applied Physics Letters [AIP Publishing], Volume: 106 Issue: 13 Pages: 131904

Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Fabrizio Roccaforte, Filippo Giannazzo

Current mapping in graphene contacts to AlGaN/GaN heterostructures

Nanoscience and Nanometrology [], Volume: 1 Pages: 1-7

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Applied Surface Science [North-Holland], Volume: 314 Pages: 546-551

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio

Challenges for energy efficient wide band gap semiconductor power devices

physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071

G Fisichella, G Greco, F Roccaforte, F Giannazzo

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

Applied Physics Letters [AIP Publishing], Volume: 105 Issue: 6 Pages: 063117

Giuseppe Nicotra, Paolo Longo, Ioannis Deretzis, Mario Scuderi, Antonino La Magna, Filippo Giannazzo, Ray D Twesten, Corrado Spinella

Observation of layer by layer graphitization of 4H-SiC, through atomic-EELS at low energy

Microscopy and Microanalysis [Cambridge University Press], Volume: 20 Issue: S3 Pages: 560-561

G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo

Microscopic mechanisms of graphene electrolytic delamination from metal substrates

Applied Physics Letters [AIP], Volume: 104 Issue: 23 Pages: 233105

M Vivona, G Greco, F Giannazzo, R Lo Nigro, S Rascunà, M Saggio, F Roccaforte

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC

Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018

F Roccaforte, P Fiorenza, G Greco, M Vivona, R Lo Nigro, F Giannazzo, A Patti, M Saggio

Recent advances on dielectrics technology for SiC and GaN power devices

Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, F Roccaforte, A La Magna

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

Journal of Crystal Growth [North-Holland], Volume: 393 Pages: 150-155

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, C Spinella, F Roccaforte, A La Magna

Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy

Applied Surface Science [North-Holland], Volume: 291 Pages: 53-57

Sebastiano Cataldo, Camillo Sartorio, Filippo Giannazzo, Antonino Scandurra, Bruno Pignataro

Self-organization and nanostructural control in thin film heterojunctions

Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 7 Pages: 3566-3575

Giuseppe Nicotra, Quentin M Ramasse, Mario Scuderi, Paolo Longo, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Corrado Spinella

Atomic Scale Imaging and Energy Loss Spectroscopy of Epitaxial Graphene

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1714

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680

Werner Schustereder, Johannes G Laven, Hans-Joachim Schulze, Peter Hadley, Sebastiano Ravesi, Filippo Giannazzo

Papers presented at the E-MRS 2014 Spring Meeting–Symposium X Materials Research for Group IV Semiconductors: Growth, Characterization, and Technological Developments

Phys. Status Solidi C [], Volume: 11 Issue: 11-12 Pages: 1539-1543

K Alassaad, M Vivona, V Soulière, B Doisneau, F Cauwet, D Chaussende, F Giannazzo, F Roccaforte, Gabriel Ferro

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 3 Issue: 8 Pages: P285-P292

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201

P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied Physics Letters [AIP], Volume: 103 Issue: 15 Pages: 153508

G Greco, F Giannazzo, F Iucolano, R Lo Nigro, F Roccaforte

Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [AIP], Volume: 114 Issue: 8 Pages: 083717

M Ostler, I Deretzis, S Mammadov, F Giannazzo, G Nicotra, C Spinella, Th Seyller, A La Magna

Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces

Physical Review B [American Physical Society], Volume: 88 Issue: 8 Pages: 085408

G Nicotra, QM Ramasse, I Deretzis, C Bongiorno, C Spinella, F Giannazzo

Atomic-Scale Analysis of Chemical Bonding of Delaminated Graphene at Faceted SiC by Aberration-Corrected Scanning Transmission Electron Microscopy

Microscopy and Microanalysis [Cambridge University Press], Volume: 19 Issue: S2 Pages: 1238-1239

F Giannazzo, G Fisichella, R Lo Nigro, P Fiorenza, S Di Franco, A Marino, N Piluso, E Rimini, F Roccaforte

Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate‐supported graphene

physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192

Giovanna Pellegrino, Alessandra Alberti, Guglielmo G Condorelli, Filippo Giannazzo, Antonino La Magna, Anna Maria Paoletti, Giovanna Pennesi, Gentilina Rossi, Gloria Zanotti

Study of the Anchoring Process of Tethered Unsymmetrical Zn-Phthalocyanines on TiO2 Nanostructured Thin Films

The Journal of Physical Chemistry C [American Chemical Society], Volume: 117 Issue: 21 Pages: 11176-11185

C Garozzo, F Giannazzo, M Italia, A La Magna, V Privitera, RA Puglisi

Radial junctions formed by conformal chemical doping for innovative hole-based solar cells

Materials Science and Engineering: B [Elsevier], Volume: 178 Issue: 9 Pages: 686-690

Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, Alessia Frazzetto, Simona Lorenti, Mario S Alessandrino, Fabrizio Roccaforte

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254

Giuseppe Nicotra, Quentin M Ramasse, Ioannis Deretzis, Antonino La Magna, Corrado Spinella, Filippo Giannazzo

Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy

ACS nano [American Chemical Society], Volume: 7 Issue: 4 Pages: 3045-3052

Gabriele Fisichella, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Cristina Tudisco, Guido G Condorelli, Nicolò Piluso, Noemi Spartà, Stella Lo Verso, Corrado Accardi, Cristina Tringali, Sebastiano Ravesi, Filippo Giannazzo

Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242

Filippo Giannazzo, Antonino Scuderi, Giuseppe Greco, Patrick Fiorenza, Raffaela Lo Nigro, Michal Leszczyński, Fabrizio Roccaforte

Nanoscale Probing of Interfaces in GaN for Devices Applications

ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 3 Pages: 439-446

Alessandra Alberti, Filippo Giannazzo

Publisher's Note:“Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy”[Appl. Phys. Lett. 101, 261906 (2012)]

Applied Physics Letters [AIP Publishing], Volume: 102 Issue: 3 Pages: 039901-039901.1

M Valvo, C Bongiorno, F Giannazzo, A Terrasi

Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001) Si single crystal

Journal of Applied Physics [AIP], Volume: 113 Issue: 3 Pages: 033513

Fabrizio Roccaforte, Patrick Fiorenza, Filippo Giannazzo

Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 8 Pages: N3006-N3011

Alessandra Alberti, Filippo Giannazzo

Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy

Applied Physics Letters [AIP], Volume: 101 Issue: 26 Pages: 261906

F Giannazzo, I Deretzis, A La Magna, F Roccaforte, Rositsa Yakimova

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422

LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Applied Physics Letters [AIP], Volume: 101 Issue: 19 Pages: 193501

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters [AIP], Volume: 101 Issue: 17 Pages: 172901

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics [AIP], Volume: 112 Issue: 8 Pages: 084501

F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, R Lo Nigro, M Saggio, M Leszczyński, P Pristawko, V Raineri

Critical issues for interfaces to p-type SiC and GaN in power devices

Applied Surface Science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333

S Sonde, C Vecchio, F Giannazzo, Rositsa Yakimova, V Raineri, E Rimini

Effect of graphene/4H-SiC (0001) interface on electrostatic properties in graphene

Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 993-996

S Sonde, C Vecchio, F Giannazzo, R Lo Nigro, V Raineri, E Rimini

Influence of substrate dielectric permittivity on local capacitive behavior in graphene

Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 989-992

F Giannazzo, V Raineri

Graphene: Synthesis and nanoscale characterization of electronic properties

Rivista del Nuovo Cimento della Societa Italiana di Fisica [], Volume: 35 Issue: 5 Pages: 267-304

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza, Vito Raineri

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120

Carmelo Vecchio, Sushant Sonde, Corrado Bongiorno, Martin Rambach, Rositza Yakimova, Vito Raineri, Filippo Giannazzo

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 269

Filippo Giannazzo, Sushant Sonde, Emanuele Rimini, Vito Raineri

Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy

Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 109

László Dózsa, György Molnár, Vito Raineri, Filippo Giannazzo, János Ferencz, Štefan Lányi

Scanning tip measurement for identification of point defects

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 140

Alessia Frazzetto, Filippo Giannazzo, Raffaella Lo Nigro, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Edoardo Zanetti, Vito Raineri, Fabrizio Roccaforte

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Nanoscale research letters [], Volume: 6 Issue: 1 Pages: 158

László Dózsa, Štefan Lányi, Vito Raineri, Filippo Giannazzo, Nikolay Gennadevich Galkin

Microscopic study of electrical properties of CrSi 2 nanocrystals in silicon

Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 209

Giuseppe Greco, Filippo Giannazzo, Alessia Frazzetto, Vito Raineri, Fabrizio Roccaforte

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132

Chiara Musumeci, Mali H Rosnes, Filippo Giannazzo, Mark D Symes, Leroy Cronin, Bruno Pignataro

Smart high-κ nanodielectrics using solid supported polyoxometalate-rich nanostructures

ACS nano [American Chemical Society], Volume: 5 Issue: 12 Pages: 9992-9999

Filippo Giannazzo, Sushant Sonde, Raffaella Lo Nigro, Emanuele Rimini, Vito Raineri

Mapping the density of scattering centers limiting the electron mean free path in graphene

Nano letters [American Chemical Society], Volume: 11 Issue: 11 Pages: 4612-4618

Jens Eriksson, Fabrizio Roccaforte, Ming-Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at< formula>< roman> SiO< inf> 2-3< roman> C-< roman> S i C Interfaces

AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied physics letters [AIP], Volume: 99 Issue: 7 Pages: 072117

A Frazzetto, F Giannazzo, R Lo Nigro, V Raineri, F Roccaforte

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302

Giuseppe Compagnini, Giuseppe Forte, Filippo Giannazzo, Vito Raineri, Antonino La Magna, Iannis Deretzis

Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations

Journal of Molecular Structure [Elsevier], Volume: 993 Issue: 1-3 Pages: 506-509

S Sonde, F Giannazzo, C Vecchio, R Yakimova, E Rimini, V Raineri

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas (vol 97, 132101, 2010)

APPLIED PHYSICS LETTERS [AMER INST PHYSICS], Volume: 98 Issue: 6

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini, V Raineri

Erratum: Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas [Appl. Phys. Lett. 97, 132101 (2010)]

Applied Physics Letters [AIP], Volume: 98 Issue: 6 Pages: 132101

Vito Raineri, Emanuele Rimini, Filippo Giannazzo

Mesoscopic Transport Properties in Exfoliated Graphene on SiO2/Si

Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 3 Issue: 1 Pages: 55-58

Filippo Giannazzo, Pierre Eyben, Jacek Baranowski, Jean Camassel, Stefan Lányi

Advanced materials nanocharacterization

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 107

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini, V Raineri

Correction: Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas (vol 97, 132101, 2010)

Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 6 Pages: 069902

A FRAZZETTO, F GIANNAZZO, R LO NIGRO, V RAINERI, F ROCCAFORTE

Structural and transport properties in alloyed Ti

Journal of physics. D, Applied physics [Institute of Physics], Volume: 44 Issue: 25

Jens Eriksson, Fabrizio Roccaforte, Patrick Fiorenza, Ming-Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Vito Raineri

Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces

Journal of Applied Physics [AIP], Volume: 109 Issue: 1 Pages: 013707

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri

Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing

AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 75-78

Jens Eriksson, Fabrizio Roccaforte, Ming‐Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces

AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 47-50

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini, V Raineri

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas

Applied Physics Letters [AIP], Volume: 97 Issue: 13 Pages: 132101

F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri

Surface and interface issues in wide band gap semiconductor electronics

Applied Surface Science [North-Holland], Volume: 256 Issue: 19 Pages: 5727-5735

Fabrizio Roccaforte, Ming-Hung Weng, Corrado Bongiorno, Filippo Giannazzo, Ferdinando Iucolano, Vito Raineri

Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC

Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Emanuele Rimini

Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate

physica status solidi (b) [WILEY‐VCH Verlag], Volume: 247 Issue: 4 Pages: 907-911

F Giannazzo, S Sonde, V Raineri, G Patanè, G Compagnini, F Aliotta, R Ponterio, E Rimini

Optical, morphological and spectro- scopic characterization of graphene on SiO 2

physica status solidi c [WILEY‐VCH Verlag], Volume: 7 Issue: 3‐4 Pages: 1251-1255

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Emanuele Rimini

Investigation of graphene–SiC interface by nanoscale electrical characterization

physica status solidi (b) [WILEY‐VCH Verlag], Volume: 247 Issue: 4 Pages: 912-915

V Raineri, F Giannazzo

Scanning tip measurement for identification of point defects

NANOSCALE RESEARCH LETTERS [Springer Science and Media], Volume: 6 Issue: 1 Pages: 1-5

F Giannazzo, S Sonde, V Raineri, E Rimini

Irradiation damage in graphene on SiO 2 probed by local mobility measurements

Applied Physics Letters [AIP], Volume: 95 Issue: 26 Pages: 263109

S Sonde, F Giannazzo, V Raineri, Rositsa Yakimova, J-R Huntzinger, Antoine Tiberj, Jean Camassel

Electrical properties of the graphene/4 H-SiC (0001) interface probed by scanning current spectroscopy

Physical Review B [American Physical Society], Volume: 80 Issue: 24 Pages: 241406

Giuseppe Compagnini, Filippo Giannazzo, Sushant Sonde, Vito Raineri, Emanuele Rimini

Ion irradiation and defect formation in single layer graphene

Carbon [Pergamon], Volume: 47 Issue: 14 Pages: 3201-3207

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Toward an ideal Schottky barrier on 3 C-SiC

Applied Physics Letters [AIP], Volume: 95 Issue: 8 Pages: 081907

F Roccaforte, F Giannazzo, F Iucolano, C Bongiorno, V Raineri

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

Journal of Applied Physics [AIP], Volume: 106 Issue: 2 Pages: 023703

S Sonde, F Giannazzo, V Raineri, E Rimini

Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [AVS], Volume: 27 Issue: 2 Pages: 868-873

F Giannazzo, F Roccaforte, F Iucolano, V Raineri, F Ruffino, MG Grimaldi

Nanoscale current transport through Schottky contacts on wide bandgap semiconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [AVS], Volume: 27 Issue: 2 Pages: 789-794

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri, C Bongiorno, C Spinella

Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO2

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304

Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale

Applied Physics Letters [AIP], Volume: 94 Issue: 11 Pages: 112104

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Atomic force microscopy study of the kinetic roughening in nanostructured gold films on SiO2

Nanoscale research letters [SpringerOpen], Volume: 4 Issue: 3 Pages: 262

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, C Spinella

Normal and abnormal grain growth in nanostructured gold film

Journal of Applied Physics [AIP], Volume: 105 Issue: 5 Pages: 054311

Fabrice Severac, Fuccio Cristiano, Elena Bedel-Pereira, Pier Francesco Fazzini, Wilfried Lerch, Silke Paul, Xavier Hebras, Filippo Giannazzo

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Journal of Applied Physics [AIP], Volume: 105 Issue: 4 Pages: 043711

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, Vito Raineri

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Salvatore Di Franco, Antonio Marino, Emanuele Rimini

Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene

Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 305

S SONDE, F GIANNAZZO, V RAINERI, R YAKIMOVA, J-R HUNTZINGER, A TIBERJ, J CAMASSEL

Electrical properties of the graphene

Physical review B. Condensed matter and materials physics [American Physical Society], Volume: 80 Issue: 24

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Au/Si nanodroplets towards Si nanowires formation: Characterization of the thermal-induced self-organization mechanism

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 6 Issue: 1 Pages: 012032

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 4 Issue: 3 Pages: 262-268

Filippo Giannazzo, Sushant Sonde, Vito Raineri, Emanuele Rimini

Nanoscale modification of graphene transport properties by ion irradiation

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1203

Filippo Giannazzo, Sushant Sonde, Jean-Roch Huntzinger, Antoine Tiberj, Rositza Yakimova, Vito Raineri, Jean Camassel

Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1205

F Giannazzo, S Sonde, V Raineri, E Rimini

Screening length and quantum capacitance in graphene by scanning probe microscopy

Nano letters [American Chemical Society], Volume: 9 Issue: 1 Pages: 23-29

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2

Nanoscale research letters [Springer New York], Volume: 3 Issue: 11 Pages: 454

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Journal of Applied Physics [AIP], Volume: 104 Issue: 9 Pages: 093706

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri

Microstructure of Au nanoclusters formed in and on SiO 2

Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598

M FICHERA, F GIANNAZZO, S LIBERTINO, F SINATRA

SENSING ELEMENT FOR GLUCOSE BIOSENSOR

Proceedings of the 12th Italian Conference, Sensors and Microsystems, Napoli, Italy, 12-14 February 2007 [World Scientific], Pages: 3

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si (100): size and roughness evolution

Journal of Applied Physics [AIP], Volume: 104 Issue: 2 Pages: 024310

Fabrizio Roccaforte, Filippo Giannazzo, Ferdinando Iucolano, Corrado Bongiorno, Vito Raineri

Two-dimensional electron gas insulation by local surface thin thermal oxidation in Al Ga N∕ Ga N heterostructures

Applied Physics Letters [AIP], Volume: 92 Issue: 25 Pages: 252101

Sebania Libertino, Filippo Giannazzo, Venera Aiello, Antonino Scandurra, Fulvia Sinatra, Marcella Renis, Manuela Fichera

XPS and AFM characterization of the enzyme glucose oxidase immobilized on SiO2 surfaces

Langmuir [American Chemical Society], Volume: 24 Issue: 5 Pages: 1965-1972

M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via

Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975

Elena Bruno, Salvo Mirabella, Francesco Priolo, Katja Kuitunen, Filip Tuomisto, Jonatan Slotte, Filippo Giannazzo, Corrado Bongiorno, Vito Raineri, Enrico Napolitani

He implantation to control B diffusion in crystalline and preamorphized Si

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [AVS], Volume: 26 Issue: 1 Pages: 386-390

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1341

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals&58; Gold on/in SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 3 Issue: 11 Pages: 454-460

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: Influence of Process Pressure

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 603

Alain Claverie, Fuccio Cristiano, Mathieu Gavelle, Fabrice Sévérac, Frédéric Cayrel, Daniel Alquier, Wilfried Lerch, Silke Paul, Leonard Rubin, Vito Raineri, Filippo Giannazzo, Hervé Jaouen, Ardechir Pakfar, Aomar Halimaoui, Claude Armand, Nikolay Cherkashim, Olivier Marcelot

Strengths and limitations of the vacancy engineering approach for the control of dopant diffusion and activation in silicon

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1070

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Electrical properties of self-assembled nano-Schottky diodes

Journal of Nanomaterials [Hindawi], Volume: 2008

Håkan Andersson, Peter Berkesand, Emma Burman, Anders Fåk, Elisavet Koutzamani

Linköping University Electronic Press

Policy [], Volume: 2007 Issue: 2006 Pages: 2005

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Barrier inhomogeneity and electrical properties of Pt∕ Ga N Schottky contacts

Journal of Applied Physics [AIP], Volume: 102 Issue: 11 Pages: 113701

F Giannazzo, F Roccaforte, V Raineri

Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C

Applied Physics Letters [AIP], Volume: 91 Issue: 20 Pages: 202104

Sebania Libertino, Antonino Scandurra, Venera Aiello, Filippo Giannazzo, Fulvia Sinatra, Marcella Renis, Manuela Fichera

Layer uniformity in glucose oxidase immobilization on SiO 2 surfaces

Applied Surface Science [North-Holland], Volume: 253 Issue: 23 Pages: 9116-9123

G Impellizzeri, S Mirabella, AM Piro, MG Grimaldi, F Priolo, F Giannazzo, V Raineri, E Napolitani, A Carnera

Fluorine counter doping effect in B-doped Si

Applied Physics Letters [AIP], Volume: 91 Issue: 13 Pages: 132101

F Ruffino, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2

Nanoscale research letters [Springer New York], Volume: 2 Issue: 5 Pages: 240

E Bruno, S Mirabella, E Napolitani, F Giannazzo, V Raineri, F Priolo

He implantation in Si for B diffusion control

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 181-185

F Iucolano, F Giannazzo, F Roccaforte, L Romano, MG Grimaldi, V Raineri

Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 336-339

F Ruffino, R De Bastiani, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, C Spinella, V Raineri

Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, C Bongiorno, F Roccaforte, V Raineri

Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces

Journal of applied physics [AIP], Volume: 101 Issue: 6 Pages: 064306

F Giannazzo, F Roccaforte, V Raineri

High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 450-453

F Giannazzo, V Raineri, S Mirabella, G Impellizzeri, F Priolo

Carrier concentration and mobility profiling in quantum wells by scanning probe microscopy

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 446-449

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Temperature behavior of inhomogeneous Pt∕ Ga N Schottky contacts

Applied Physics Letters [AIP], Volume: 90 Issue: 9 Pages: 092119

C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals&58; gold in/on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247

F Giannazzo, F Roccaforte, SF Liotta, V Raineri

Chapter 3-SiC Characterization and Theory-3.3 Defects-Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 545-548

F GIANNAZZO, C BONGIORNO, F ROCCAFORTE, V RAINERI, F RUFFINO, A CANINO, MG GRIMALDI

SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES

JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574

Giuseppe Arena, Ioannis Deretzis, Giuseppe Forte, Filippo Giannazzo, Antonino La Magna, Giuseppe Lombardo, Vito Raineri, Carmelo Sgarlata, Giuseppe Spoto

Electron transport properties of calix [4] arene based systems in a metal–molecule–metal junction

New Journal of Chemistry [Royal Society of Chemistry], Volume: 31 Issue: 5 Pages: 756-761

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in Si O 2

Applied physics letters [AIP], Volume: 89 Issue: 26 Pages: 263108

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles

Applied physics letters [AIP], Volume: 89 Issue: 24 Pages: 243113

F Roccaforte, F Iucolano, A Alberti, F Giannazzo, V Puglisi, C Bongiorno, S Di Franco, V Raineri

Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si (111)

Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379

F Roccaforte, F Iucolano, F Giannazzo, A Alberti, V Raineri

Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)

Applied physics letters [AIP], Volume: 89 Issue: 2 Pages: 022103

S Mirabella, E Bruno, F Priolo, F Giannazzo, C Bongiorno, V Raineri, E Napolitani, A Carnera

Role of surface nanovoids on interstitial trapping in He implanted crystalline Si

Applied physics letters [AIP], Volume: 88 Issue: 19 Pages: 191910

FRVRSFLF Giannazzo, F Roccaforte, V Raineri, SF Liotta

Transport localization in heterogeneous Schottky barriers of quantum-defined metal films

EPL (Europhysics Letters) [IOP Publishing], Volume: 74 Issue: 4 Pages: 686

F Giannazzo, V Raineri, E Bruno, S Mirabella, G Impellizzeri, F Priolo, E Napolitani

Size effects on the electrical activation of low-energy implanted B in Si

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [AVS], Volume: 24 Issue: 1 Pages: 468-472

F Giannazzo, V Raineri, S Mirabella, G Impellizzeri, F Priolo, M Fedele, R Mucciato

Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [AVS], Volume: 24 Issue: 1 Pages: 370-374

F Giannazzo, V Raineri, S Mirabella, G Impellizzeri, F Priolo

Drift mobility in quantum nanostructures by scanning probe microscopy

Applied physics letters [AIP], Volume: 88 Issue: 4 Pages: 043117

F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, A Ruggiero, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, F Portuese, G Abbondanza, G Abbagnale, Alessandro Veneroni, F Omarini, Laura Zamolo, Maurizio Masi, GL Valente, D Crippa

High growth rate process in a SiC horizontal CVD reactor using HCl

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50

F Giannazzo, V Raineri, E Bruno, S Mirabella, G Impellizzeri, F Priolo, E Napolitani

Papers from the Eighth International Workshop on the Fabrication, Characterization, and Modeling of Ultra-shallow Doping Profiles in Semiconductors-Modeling Dopants and Defects-Size effects on

Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 468-472

E Bruno, S Mirabella, G Impellizzeri, F Priolo, F Giannazzo, V Raineri, E Napolitani

Submicron confinement effect on electrical activation of B implanted in Si

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 257-260

F Giannazzo, V Raineri, S Mirabella, E Bruno, G Impellizzeri, F Priolo

Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 54-61

E Bruno, S Mirabella, G Impellizzeri, F Priolo, F Giannazzo, V Raineri, E Napolitani

B activation enhancement in submicron confined implants in Si

Applied Physics Letters [AIP], Volume: 87 Issue: 13 Pages: 133110

F Roccaforte, S Libertino, F Giannazzo, C Bongiorno, F La Via, V Raineri

Ion irradiation of inhomogeneous Schottky barriers on silicon carbide

Journal of applied physics [AIP], Volume: 97 Issue: 12 Pages: 123502

F Roccaforte, F Giannazzo, C Bongiorno, S Libertino, F La Via, V Raineri

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732

GF Cerofolini, C Galati, S Reina, L Renna, F Giannazzo, V Raineri

Hydrosilation of 1‐alkyne at nearly flat, terraced, homogeneously hydrogen‐terminated silicon (100) surfaces

Surface and interface analysis [John Wiley & Sons, Ltd.], Volume: 37 Issue: 1 Pages: 71-76

F Giannazzo, V Raineri, A La Magna, S Mirabella, G Impellizzeri, AM Piro, F Priolo, E Napolitani, SF Liotta

Carrier distribution in quantum nanostructures by scanning capacitance microscopy

Journal of applied physics [AIP], Volume: 97 Issue: 1 Pages: 014302

Filippo Giannazzo, Samuel Lara Avila, Jens Eriksson, Sushant Sonde

Integration of 2D Materials for Electronics Applications

[MDPI],

Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte, Chandreswar Mahata, Mario Lanza

Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics

Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 303-350

Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte, Roy Dagher, Adrien Michon, Yvon Cordier

Hot Electron Transistors with Graphene Base for THz Electronics

Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [CRC Press], Pages: 111-132

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Giuseppe Nicotra, Corrado Spinella, Fabrizio Roccaforte, Rositza Yakimova

Nanoscale electrical and structural properties of epitaxial graphene interface with sic (0001)

Epitaxial Graphene on Silicon Carbide [Pan Stanford], Pages: 111-141

Antonino La Magna, Ioannis Deretzis, Filippo Giannazzo

Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC (0001)

Epitaxial Graphene on Silicon Carbide [Pan Stanford], Pages: 123-154

G Fisichella, S Lo Verso, S Di Marco, V Vinciguerra, E Schilir, S Di Franco, R Lo Nigro, F Roccaforte, A Zurutuza, A Centeno, S Ravesi, F Giannazzo

Advances in the Fabrication of Large-Area Back-Gated Graphene Field-Effect Transistors on Plastics: Platform for Flexible Electronics and Sensing

GraphITA [Springer, Cham], Pages: 125-136

F Giannazzo, C Bongiorno, S di Franco, R Lo Nigro, E Rimini, V Raineri

Morphological and Structural Characterization of Graphene Grown by Thermal Decomposition of 4H-SiC (0001) and by C Segregation on Ni

GraphITA 2011 [Springer, Berlin, Heidelberg], Pages: 99-107

Filippo Giannazzo, Sushant Sonde, Vito Raineri

Electronic properties of graphene probed at the nanoscale

Physics and Applications of Graphene-Experiments [IntechOpen],

Filippo Giannazzo, Vito Raineri, Emanuele Rimini

Transport properties of graphene with nanoscale lateral resolution

Scanning Probe Microscopy in Nanoscience and Nanotechnology 2 [Springer, Berlin, Heidelberg], Pages: 247-285

Francesco Ruffino, Filippo Giannazzo, Fabrizio Roccaforte, Vito Raineri, Maria Grazia Grimaldi

Self-Assembled Metal Nanostructures in Semiconductor Structures

Toward Functional Nanomaterials [Springer, New York, NY], Pages: 127-171

V AIELLO, M FICHERA, F GIANNAZZO, S LIBERTINO, A SCANDURRA, M REINS, F SINATRA

FABRICATION AND CHARACTERIZATION OF THE SENSING ELEMENT FOR GLUCOSE BIOSENSOR APPLICATIONS

Sensors And Microsystems [], Pages: 3-13

Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Carrier transport in advanced semiconductor materials

Applied Scanning Probe Methods X [Springer, Berlin, Heidelberg], Pages: 63-103

F Giannazzo, V Raineri, S Mirabella, G Impellizzeri, F Priolo, M Fedele, R Mucciato

Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy

Microscopy of Semiconducting Materials [Springer, Berlin, Heidelberg], Pages: 487-490

Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 230-235

Andrea Severino, Domenico Mello, Simona Boninelli, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Cristiano Calabretta, Lucia Calcagno, Nicolò Piluso, Giuseppe Arena

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 407-411

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Salvatore di Franco, Domenico Corso, Patrick Fiorenza, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489

Patrick Fiorenza, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Sylvain Monnoye, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482

Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 339-344

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Filippo Giannazzo, Fabrizio Roccaforte

Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 123-126

Ioannis Deretzis, Filippo Giannazzo, Giuseppe GN Angilella, Luca Parisi, Antonino La Magna

Atom by atom simulations of nano-materials processing

2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 1-2

P Fiorenza, A La Magna, M Vivona, F Giannazzo, F Roccaforte

Anomalous Fowler-Nordheim tunneling through SiO 2/4H-SiC barrier investigated by temperature and time dependent gate current measurements

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 705-708

Filippo Giannazzo, Giuseppe Nicotra, Ioannis Deretzis, Aurora Piazza, Gabriele Fisichella, S Agnello, Corrado Spinella, Antonino La Magna, Fabrizio Roccaforte, Rositza Yakimova

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC (000-1)

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1129-1132

Ioannis Deretzis, Filippo Giannazzo, Antonino La Magna

The Interaction between Graphene and the SiC Substrate: Ab Initio Calculations for Polar and Nonpolar Surfaces

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1125-1128

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 701-704

Antonino La Magna, Ioannis Deretzis, Filippo Giannazzo, Giuseppe Nicotra, Fabrizio Roccaforte, Corrado Spinella, Rositza Yakimova

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC (0001) and SiC (000-1) Substrates

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1121-1124

Giuseppe Greco, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Domenico Corso, Emanuele Smecca, Alessandra Alberti, Alfonso Patti, Fabrizio Roccaforte

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1170-1173

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Raffaella Lo Nigro, Emanuela Schilirò, Fabrizio Roccaforte, Filippo Giannazzo

Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1137-1140

Kassem Alassaad, Veronique Soulière, Marelina Vivona, Filippo Giannazzo, Fabrizio Roccaforte, Gabriel Ferro

Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate

Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 27-31

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Giuseppe Nicotra, Corrado Spinella, Gabriele Fisichella, Patrick Fiorenza, Rositza Yakimova, Fabrizio Roccaforte

Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces

Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 103-107

P Fiorenza, Marilena Vivona, LK Swanson, Filippo Giannazzo, C Bongiorno, S Di Franco, S Lorenti, A Frazzetto, Thierry Chassagne, Fabrizio Roccaforte

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 143-147

Marilena Vivona, Filippo Giannazzo, Kassem Alassaad, Véronique Soulière, Gabriel Ferro, Fabrizio Roccaforte

Preliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky Contacts

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 424-427

Mario Saggio, Alfio Guarnera, Edoardo Zanetti, Simone Rascunà, Alessia Frazzetto, Dario Salinas, Filippo Giannazzo, Patrick Fiorenza, Fabrizio Roccaforte

Industrial approach for next generation of power devices based on 4H-SiC.

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 660-666

Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 428-431

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Electrical properties of graphene contacts to AlGaN/GaN heterostructures

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 986-989

Filippo Giannazzo, Stefan Hertel, Andreas Albert, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger, Heiko B Weber

Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 929-932

P Fiorenza, G Greco, M Vivona, F Giannazzo, R Lo Nigro, F Roccaforte

Nanoscale reliability aspects of insulator onto wide band gap compounds

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65

G Fisichella, G Greco, S Ravesi, F Roccaforte, F Giannazzo

Current transport in graphene/AlGaN/GaN heterostructures

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 19-22

A Piazza, S Agnello, I Deretzis, A La Magna, M Scuderi, G Nicotra, C Spinella, G Fisichella, F Roccaforte, M Cannas, FM Gelardi, R Yakimova, F Giannazzo

Micro-Raman characterization of graphene grown on SiC (000-1)

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 15-18

Marilena Vivona, Kassem Al Assaad, Véronique Soulière, Filippo Giannazzo, Fabrizio Roccaforte, Gabriel Ferro

Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 706-709

Marilena Vivona, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Fabrizio Roccaforte, Alessia Frazzetto, Simone Rascunà, Edoardo Zanetti, Alfio Guarnera, Mario Saggio

Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n-and p-type implanted 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 665-668

Filippo Giannazzo, Patrick Fiorenza, Mario Saggio, Fabrizio Roccaforte

Nanoscale Characterization of SiC Interfaces and Devices

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 407-413

Patrick Fiorenza, Lukas K Swanson, Marilena Vivona, Filippo Giannazzo, Corrado Bongiorno, Simona Lorenti, Alessia Frazzetto, Fabrizio Roccaforte

Characterization of SiO2/SiC interfaces annealed in N2O or POCl3

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 623-626

Filippo Giannazzo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger, Heiko B Weber

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 1142-1145

S Cataldo, C Sartorio, F Giannazzo, B Pignataro

On the 3D Control of the Functional Structure of Molecular Thin Films

10th International Conference on Nanosciences & Nanotechnologies (NN13) [],

Lukas K Swanson, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Effects of a post-oxidation annealing in nitrous oxide on the morphological and electrical properties of SiO2/4H-SiC interfaces

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 719-722

Patrick Fiorenza, Alessia Frazzetto, Lukas K Swanson, Filippo Giannazzo, Fabrizio Roccaforte

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 699-702

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Salvatore di Franco, Nicolò Piluso, Patrick Fiorenza, Fabrizio Roccaforte, Patrick Schmid, Wilfried Lerch, Rositza Yakimova

Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001)

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 113-116

Raffaella Lo Nigro, Giuseppe Greco, L Swanson, G Fisichella, Patrick Fiorenza, Filippo Giannazzo, S Di Franco, C Bongiorno, A Marino, G Malandrino, Fabrizio Roccaforte

Potentialities of nickel oxide as dielectric for GaN and SiC devices

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 777-780

Filippo Giannazzo, Corrado Bongiorno, Salvatore di Franco, Emanuele Rimini, Vito Raineri

Micro-and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 637-640

Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Michał Leszczyński, Pawel Prystawko, Edoardo Zanetti, Mario Saggio, Vito Raineri

Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications

Materials Science Forum [Trans Tech Publications], Volume: 711 Pages: 203-207

Alessia Frazzetto, Fabrizio Roccaforte, Filippo Giannazzo, R Lo Nigro, M Saggio, Edoardo Zanetti, Vito Raineri

Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 825-828

Filippo Giannazzo, Martin Rambach, Wielfried Lerch, Corrado Bongiorno, Salvatore Di Franco, Emanuele Rimini, Vito Raineri

Structural characterization of graphene grown by thermal decomposition of off-axis 4H-SiC (0001)

Materials Science Forum [Trans Tech Publications], Volume: 711 Pages: 141-148

Vito Raineri, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Emanuele Rimini, Filippo Giannazzo

Surface corrugation and stacking misorientation in multilayers of graphene on Nickel

Solid State Phenomena [Trans Tech Publications], Volume: 178 Pages: 125-129

Jens Eriksson, Fabrizio Roccaforte, Ming Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Vito Raineri

Electrical activity of structural defects in 3C-SiC

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 273-276

Fabrizio Roccaforte, Giuseppe Greco, Ming Hung Weng, Filippo Giannazzo, Vito Raineri

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 808-811

Sushant Sonde, Carmelo Vecchio, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Martin Rambach, Emanuele Rimini, Vito Raineri

Temperature dependent structural evolution of graphene layers on 4H-SiC (0001)

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 797-800

Alessia Frazzetto, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Corrado Bongiorno, Salvatore Di Franco, Ming Hung Weng, Mario Saggio, Edoardo Zanetti, Vito Raineri

Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 413-416

Sushant Sonde, Carmelo Vecchio, Filippo Giannazzo, Rositza Yakimova, Emanuele Rimini, Vito Raineri

Local electrical properties of the 4H-SiC (0001)/graphene interface

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 769-776

C Musumeci, M Rosnes, F Giannazzo, L Cronin, B Pignataro

Capacitive effects in silicon-supported polyoxometalate-based nanocrystals

XXIV Congresso Nazionale della Società Chimica Italiana [],

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Vito Raineri

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 713-716

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, Vito Raineri

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

Solid State Phenomena [Trans Tech Publications], Volume: 156 Pages: 493-498

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Demonstration of defect-induced limitations on the properties of Au/3C-SiC Schottky barrier diodes

Solid State Phenomena [Trans Tech Publications], Volume: 156 Pages: 331-336

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Jean Lorenzzi, Gabriel Ferro, Vito Raineri

Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 833-836

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Valeria Puglisi, Vito Raineri

Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 1211-1214

Sushant Sonde, Filippo Giannazzo, Jean Roch Huntzinger, Antoine Tiberj, Mikael Syväjärvi, Rositza Yakimova, Vito Raineri, Jean Camassel

Uniformity of Epitaxial Graphene on On-axis and Off-axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 607-610

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Stefano Leone, Vito Raineri

On the viability of Au/3C-SiC Schottky barrier diodes

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 677-680

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Salvatore Di Franco, Antonio Marino, Emanuele Rimini

Role of ion irradiation induced lattice defects on nanoscale capacitive behavior of graphene

Solid State Phenomena [Trans Tech Publications], Volume: 156 Pages: 305-311

Filippo Giannazzo, Martin Rambach, Dario Salinas, Fabrizio Roccaforte, Vito Raineri

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 457-460

Jean Camassel, Jean Roch Huntzinger, Antoine Tiberj, M Syväjärvi, Rositza Yakimova, F Giannazzo

Micro-Raman investigation of few graphene layers grown on 6H-SiC

International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09) [],

Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via

Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 127-130

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri

Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 967-970

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: influence of process pressure

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 211-214

Vito Raineri, Filippo Giannazzo, Fabrizio Roccaforte

Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 417-422

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore di Franco, Valeria Puglisi, Vito Raineri

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 1341-1344

L Romano, G Impellizzeri, M Tomasello, F Giannazzo, B Fraboni, MG Grimaldi

Self-ion-induced nanostructures in Ge

2009 MRS fall meeting [MRS], Pages: 350-350

Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Giuseppe Moschetti, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 569-572

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Moschetti, Valeria Puglisi, Vito Raineri

Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 959-962

S Sonde, F Giannazzo, V Raineri, Rositza Yakimova, Jean Camassel

Nanoscale current transport at graphene/SiC interface by scanning probe microscopy

International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09) [],

Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte, Lucia Romano, Maria Grazia Grimaldi, Vito Raineri

Electrical activation and carrier compensation in Si and Mg implanted GaN by Scanning Capacitance Microscopy

Solid State Phenomena [Trans Tech Publications], Volume: 131 Pages: 491-496

O Marcelot, A Claverie, Daniel Alquier, Frédéric Cayrel, Wilfried Lerch, Silke Paul, L Rubin, Vito Raineri, Filippo Giannazzo, H Jaouen

Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids

Solid State Phenomena [Trans Tech Publications], Volume: 131 Pages: 357-362

Francesco Ruffino, Filippo Giannazzo, Fabrizio Roccaforte, Vito Raineri, Maria Grazia Grimaldi

Clustering of gold on 6H-SiC and local nanoscale electrical properties

Solid State Phenomena [Trans Tech Publications], Volume: 131 Pages: 517-522

F Giannazzo, F Roccaforte, V Raineri, D Salinas

Effect of Thermal Annealing on the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC

2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 71-73

F Iucolano, F Giannazzo, F Roccaforte, V Puglisi, MG Grimaldi, V Raineri

Effects of thermal annealing in ion-implanted Gallium Nitride

2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 161-163

E Bruno, S Mirabella, F Priolo, F Giannazzo, V Raineri, E Napolitani

Effect of He Induced Nanovoid on B Implanted in Si: The Microscopic Mechanism

2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 105-110

G Impellizzeri, S Mirabella, MG Grimaldi, F Priolo, F Giannazzo, V Raineri, E Napolitani, A Carnera

Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine

2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 81-85

Filippo Giannazzo, Fabrizio Roccaforte, SF Liotta, Vito Raineri

Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 545-548

Mariaconcetta Canino, Filippo Giannazzo, Fabrizio Roccaforte, Antonella Poggi, Sandro Solmi, Vito Raineri, Roberta Nipoti

Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 571-574

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, A Alberti, Vito Raineri

Current transport in Ti/Al/Ni/Au ohmic contacts to GaN and AlGaN

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 1027-1030

Fabrizio Roccaforte, Filippo Giannazzo, Corrado Bongiorno, Sebania Libertino, Francesco La Via, Vito Raineri

Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 729-732

Filippo Giannazzo, E Bruno, S Mirabella, G Impellizzeri, E Napolitani, Vito Raineri, F Priolo, Daniel Alquier

Effect of Self-Interstitials–Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si

Solid State Phenomena [Trans Tech Publications], Volume: 108 Pages: 395-400

Fabrizio Roccaforte, Salvatore di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio, Edoardo Zanetti

Silicon carbide: Defects and devices

Solid State Phenomena [Trans Tech Publications], Volume: 108 Pages: 663-670

Sebastiano Ravesi, Corrado Accardi, Cristina Tringali, Noemi Graziana Sparta, Stella Loverso, Filippo Giannazzo, , Filippo Giannazzo

Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtained

US9331151 [],

Noemi Graziana Sparta, Cristina Tringali, Stella Loverso, Sebastiano Ravesi, Corrado Accardi, Filippo Giannazzo, , Filippo Giannazzo

Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtained

US9099305 [],