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Filippo Giannazzo was born in Enna (Italy) in 1974. He received the Laurea in Physics and the PhD in Materials Science from the University of Catania, in 1998 and 2002, respectively. He joined CNR-IMM as a researcher in 2005, and he is Research Director from 2020.
His research interests cover the following aspects of materials science and nanotechnology:
(i) Scanning probe microscopy methods (CAFM, SCM, SSRM) for the characterization of charge transport properties in advanced materials for micro and nanoelectronics, including wide-band gap semiconductors, semiconductor heterostructures, nanostructured metal films, dielectrics, organics, graphene and other 2D materials.
(ii) Integration of graphene and other 2D materials for advanced electronics applications (high frequency, low power dissipation).
He authored or co-authored more than 350 papers and 10 book chapters in these research fields (H-index=42, >6200 citations, source Scopus December 2022). He is co-author of an international patent. He delivered several invited talks in national and international conferences.
He has been involved in several National and EU projects, and is currently coordinating the project “ETMOS: Epitaxial Transition Metal dichalcogenides Onto wide bandgap hexagonal Semiconductors for advanced electronics” in the framework of the FlagERA-JTC 2019.
He has been co-chair of two EMRS symposia (Symp. D at EMRS-Fall 2010 and Symp. J of EMRS-Fall 2012), co-organizer of the 3rd edition of the “International School of Physics and Technology of Matter” in Otranto (September 2014). Furthermore, he has been in the organizing committee of several international conferences (HETEROSIC09, WASMPE09, WOCSDICE 2011, ICSCRM 2015).
He holds national and international collaborations with academic institutions (University of Catania and Palermo; University of Tours, France; University of Montpellier, France; University of Erlangen, Germany; CNRS-CRHEA, France; University of Linkoping, Sweden; HAS, Budapest, Hungary; IEE-SAS, Bratislava, Slovakia) and industries (STMicroelectronics, Italy; Centrotherm, Germany; Graphenea, Spain; TopGaN, Poland).
In 2004 he was awarded with the SISM award from the Società Italiana di Scienze Microscopiche, and in 2014 with the “Giovan Pietro Grimaldi” award for Physics from the Accademia Gioenia and University of Catania.
Scientific Productions
Applied Surface Science [North-Holland], Volume: 679 Pages: 161316
arXiv preprint arXiv:2410.19545 [],
AIP Advances [AIP Publishing], Volume: 14 Issue: 10
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 362 Pages: 7-12
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 394-395
Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 97-99
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 678-679
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 361 Pages: 27-32
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 358 Pages: 45-49
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs
IEEE Electron Device Letters [IEEE],
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 24
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 10
Interface Properties of MoS2 van der Waals Heterojunctions with GaN
Nanomaterials [MDPI], Volume: 14 Issue: 2 Pages: 133
Materials Science in Semiconductor Processing [Pergamon], Volume: 169 Pages: 107866
Applied Surface Science [North-Holland], Volume: 639 Pages: 158230
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
Nanomaterials [MDPI], Volume: 13 Issue: 21 Pages: 2837
Microelectronic Engineering [Elsevier], Pages: 112103
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
Applied Surface Science [North-Holland], Volume: 630 Pages: 157476
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
Applied Physics Letters [AIP Publishing], Volume: 123 Issue: 7
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1090 Pages: 113-117
Electrochemical performance of gold-decorated graphene electrodes integrated with SiC
Microelectronic Engineering [Elsevier], Pages: 112042
Exploring UV-Laser Effects on Al-Implanted 4H-SiC
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 342 Pages: 85-89
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Microelectronic Engineering [Elsevier], Volume: 276 Pages: 112009
Microelectronic Engineering [Elsevier], Pages: 111967
physica status solidi (b) [], Pages: 2300262
CrystEngComm [Royal Society of Chemistry],
physica status solidi (RRL)–Rapid Research Letters [], Pages: 2300218
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
Applied Surface Science [North-Holland], Volume: 606 Pages: 154896
Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 24 Pages: 245701
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 233506
Electron Irradiation Effects on Single‐Layer MoS2 Obtained by Gold‐Assisted Exfoliation
physica status solidi (a) [], Volume: 219 Issue: 21 Pages: 2200096
Advanced Materials Interfaces [], Pages: 2201502
ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 9 Pages: 4514-4520
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions
Advanced Materials Interfaces [], Volume: 9 Issue: 22 Pages: 2200915
Solar RRL [], Volume: 6 Issue: 8 Pages: 2200267
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 14 Issue: 31 Pages: 36287-36287
Nanomaterials [MDPI], Volume: 12 Issue: 13 Pages: 2229
arXiv preprint arXiv:2206.10247 [],
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
Applied Surface Science [North-Holland], Volume: 579 Pages: 152136
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182
Solar RRL [Wiley], Volume: 6 Issue: 8 Pages: 2200267
Towards ballistic vertical transistors by graphene integration with nitride semiconductors
Il nuovo cimento C [Societa italiana di fisica], Volume: 45 Issue: 6 Pages: 1-4
ACS Applied Electronic Materials [American Chemical Society],
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3316
Applied Physics Letters [AIP Publishing LLC], Volume: 119 Issue: 9 Pages: 093103
arXiv preprint arXiv:2108.09542 [],
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107
Applied Surface Science [North-Holland], Volume: 557 Pages: 149752
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 13 Issue: 26 Pages: 31248-31259
Journal of Applied Physics [AIP Publishing LLC], Volume: 129 Issue: 23 Pages: 234501
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 1626
The Journal of Physical Chemistry C [American Chemical Society], Volume: 125 Issue: 9 Pages: 4938-4945
Material Proposal for 2D Indium Oxide
Applied Surface Science [North-Holland], Pages: 149275
Gold nanoparticle assisted synthesis of MoS 2 monolayers by chemical vapor deposition
Nanoscale Advances [Royal Society of Chemistry], Volume: 3 Issue: 16 Pages: 4826-4833
arXiv e-prints [], Pages: arXiv: 2012.08829
Indium Nitride at the 2D Limit
Advanced Materials [], Pages: 2006660
Stacking Faults in 3C-SiC: From the Crystal Structure, to the Electrical Behavior
ECS Meeting Abstracts [IOP Publishing], Issue: 24 Pages: 1762
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
Carbon [Pergamon], Volume: 169 Pages: 172-181
Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705
Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications
Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 397-438
Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 10 Pages: 103502
Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 10 Pages: 105004
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402
Applied Surface Science [North-Holland], Pages: 146656
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 3 Pages: 528
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393
Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399
Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171
Nanotechnology [IOP Publishing], Volume: 31 Issue: 12 Pages: 125203
Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface
Nanoscale [Royal Society of Chemistry],
Manipulation of epitaxial graphene towards novel properties and applications
Materials Today: Proceedings [Elsevier], Volume: 20 Pages: 37-45
MOCVD of AlN on epitaxial graphene at extreme temperatures
CrystEngComm [Royal Society of Chemistry],
Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface
Nanoscale [Royal Society of Chemistry], Volume: 12 Issue: 37 Pages: 19470-19476
Manipulation of epitaxial graphene towards novel properties and applications
Materials Today: Proceedings [Elsevier], Volume: 20 Pages: 37-45
Energies [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 15 Pages: 3953
Nanotechnology [IOP Publishing],
High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354
Nanostructured TiO2 Grown by Low-Temperature Reactive Sputtering for Planar Perovskite Solar Cells
ACS Applied Energy Materials [American Chemical Society], Volume: 2 Issue: 9 Pages: 6218-6229
Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen
Carbon [Pergamon], Volume: 149 Pages: 546-555
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66
Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC
Materials Science in Semiconductor Processing [Pergamon], Volume: 96 Pages: 145-152
Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170
Nanotechnology [IOP Publishing], Volume: 30 Issue: 28 Pages: 284003
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298
Nitrogen Soaking Promotes Lattice Recovery in Polycrystalline Hybrid Perovskites
Advanced Energy Materials [], Volume: 9 Issue: 12 Pages: 1803450
Graphene‐SiO2 Interaction from Composites to Doping
physica status solidi (a) [], Volume: 216 Issue: 3 Pages: 1800540
Engineering 2D heterojunctions with dielectrics
Nature Electronics [Nature Publishing Group], Volume: 2 Issue: 2 Pages: 54-55
Carbon Dots Dispersed on Graphene/SiO2/Si: A Morphological Study
physica status solidi (a) [], Volume: 216 Issue: 3 Pages: 1800559
Photoinduced charge transfer from Carbon Dots to Graphene in solid composite
Thin Solid Films [Elsevier], Volume: 669 Pages: 620-624
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468
Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655
physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393
Physics and technology of gallium nitride materials for power electronics
LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681
Photoinduced charge transfer from Carbon Dots to Graphene in solid composite
Thin Solid Films [Elsevier],
Interfacing Graphene with III-Nitrides for Power Device Applications
AiMES 2018 Meeting (September 30-October 4, 2018) [ECS],
Interfacing Graphene with III-Nitrides for Power Device Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 38 Pages: 1281
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008
Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702
physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42
Barrier inhomogeneity of Ni Schottky contacts to bulk GaN
physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613
Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere
Carbon [Pergamon], Volume: 127 Pages: 270-279
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77
Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon],
Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 6 Issue: 10 Pages: P741
Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere
Carbon [Pergamon],
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390
Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1325
physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764
Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],
Broadband non-contact characterization of epitaxial graphene by near-field microwave microscopy
Nanotechnology [IOP Publishing], Volume: 28 Issue: 33 Pages: 335702
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174
Carbon [Pergamon], Volume: 116 Pages: 722-732
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771
Advances in the fabrication of graphene transistors on flexible substrates
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424
Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 4 Pages: 045701
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 183-189
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6
Journal of Applied Physics [AIP Publishing LLC], Volume: 120 Issue: 20 Pages: 205701
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [],
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [],
Substrate and atmosphere influence on oxygen p-doped graphene
Carbon [Pergamon], Volume: 107 Pages: 696-704
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [],
Effect of air on oxygen p‐doped graphene on SiO2
physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344
Challenges in graphene integration for high-frequency electronics
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1749 Issue: 1 Pages: 020004
Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701
Current injection from metal to MoS 2 probed at nanoscale by conductive atomic force microscopy
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 174-178
Insight into the mechanisms of chemical doping of graphene on silicon carbide
Nanotechnology [IOP Publishing], Volume: 27 Issue: 7 Pages: 072502
Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum
ChemPhysChem [WILEY‐VCH Verlag], Volume: 16 Issue: 14 Pages: 3064-3071
Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere
The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723
Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS 2 multilayers
Physical Review B [American Physical Society], Volume: 92 Issue: 8 Pages: 081307
physica status solidi (a) [], Volume: 212 Issue: 8 Pages: 1685-1694
Current mapping in graphene contacts to AlGaN/GaN heterostructures
Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1
physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098
Interface disorder probed at the atomic scale for graphene grown on the C face of SiC
Physical Review B [American Physical Society], Volume: 91 Issue: 15 Pages: 155411
Atomistic origins of CH {sub 3} NH {sub 3} PbI {sub 3} degradation to PbI {sub 2} in vacuum
Applied Physics Letters [], Volume: 106 Issue: 13
Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 13 Pages: 131904
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
Applied surface science [North-Holland], Volume: 314 Pages: 546-551
Challenges for energy efficient wide band gap semiconductor power devices
physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 6 Pages: 063117
Observation of layer by layer graphitization of 4H-SiC, through atomic-EELS at low energy
Microscopy and Microanalysis [Cambridge University Press], Volume: 20 Issue: S3 Pages: 560-561
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 3 Issue: 8 Pages: P285
Microscopic mechanisms of graphene electrolytic delamination from metal substrates
Applied Physics Letters [American Institute of Physics], Volume: 104 Issue: 23 Pages: 233105
Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018
Recent advances on dielectrics technology for SiC and GaN power devices
Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18
Journal of crystal growth [North-Holland], Volume: 393 Pages: 150-155
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
Applied surface science [North-Holland], Volume: 291 Pages: 53-57
Phys. Status Solidi C [], Volume: 11 Issue: 11-12 Pages: 1539-1543
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680
Self-organization and nanostructural control in thin film heterojunctions
Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 7 Pages: 3566-3575
Atomic Scale Imaging and Energy Loss Spectroscopy of Epitaxial Graphene
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1714
Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153508
Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717
Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces
Physical Review B [American Physical Society], Volume: 88 Issue: 8 Pages: 085408
Microscopy and Microanalysis [Cambridge University Press], Volume: 19 Issue: S2 Pages: 1238-1239
physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192
The Journal of Physical Chemistry C [American Chemical Society], Volume: 117 Issue: 21 Pages: 11176-11185
Radial junctions formed by conformal chemical doping for innovative hole-based solar cells
Materials Science and Engineering: B [Elsevier], Volume: 178 Issue: 9 Pages: 686-690
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 8 Pages: N3006
Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy
ACS nano [American Chemical Society], Volume: 7 Issue: 4 Pages: 3045-3052
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242
Nanoscale Probing of Interfaces in GaN for Devices Applications
ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439
Applied Physics Letters [AIP Publishing], Volume: 102 Issue: 3 Pages: 039901-039901.1
APPLIED PHYSICS LETTERS [AMER INST PHYSICS], Volume: 102 Issue: 3
Journal of Applied Physics [American Institute of Physics], Volume: 113 Issue: 3 Pages: 033513
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 26 Pages: 261906
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 19 Pages: 193501
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 8 Pages: 084501
Critical issues for interfaces to p-type SiC and GaN in power devices
Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333
Graphene: Synthesis and nanoscale characterization of electronic properties
La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 35 Pages: 267-304
Effect of graphene/4H-SiC (0001) interface on electrostatic properties in graphene
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 993-996
Influence of substrate dielectric permittivity on local capacitive behavior in graphene
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 989-992
Smart high-κ nanodielectrics using solid supported polyoxometalate-rich nanostructures
ACS nano [American Chemical Society], Volume: 5 Issue: 12 Pages: 9992-9999
Applied Physics Letters [], Volume: 99 Issue: 25 Pages: 259901
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
Nanoscale Research Letters [Springer New York], Volume: 6 Issue: 1 Pages: 269
Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-8
Scanning tip measurement for identification of point defects
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 140
Microscopic study of electrical properties of CrSi 2 nanocrystals in silicon
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 209
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-6
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132
Mapping the density of scattering centers limiting the electron mean free path in graphene
Nano letters [American Chemical Society], Volume: 11 Issue: 11 Pages: 4612-4618
AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1
Applied physics letters [American Institute of Physics], Volume: 99 Issue: 7 Pages: 072117
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302
Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations
Journal of Molecular Structure [Elsevier], Volume: 993 Issue: 1-3 Pages: 506-509
APPLIED PHYSICS LETTERS [AMER INST PHYSICS], Volume: 98 Issue: 6
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 6 Pages: 132101
Mesoscopic Transport Properties in Exfoliated Graphene on SiO2/Si
Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 3 Issue: 1 Pages: 55-58
Advanced materials nanocharacterization
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 107
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 6 Pages: 069902
Structural and transport properties in alloyed Ti
Journal of physics. D, Applied physics [Institute of Physics], Volume: 44 Issue: 25
Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 1 Pages: 013707
Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing
AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 75-78
Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces
AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 47-50
Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 13 Pages: 132101
Surface and interface issues in wide band gap semiconductor electronics
Applied Surface Science [North-Holland], Volume: 256 Issue: 19 Pages: 5727-5735
Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202
Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate
physica status solidi (b) [WILEY‐VCH Verlag], Volume: 247 Issue: 4 Pages: 907-911
Investigation of graphene–SiC interface by nanoscale electrical characterization
physica status solidi (b) [WILEY‐VCH Verlag], Volume: 247 Issue: 4 Pages: 912-915
Optical, morphological and spectro- scopic characterization of graphene on SiO 2
physica status solidi c [WILEY‐VCH Verlag], Volume: 7 Issue: 3‐4 Pages: 1251-1255
Scanning tip measurement for identification of point defects
NANOSCALE RESEARCH LETTERS [Springer Science and Media], Volume: 6 Issue: 1 Pages: 1-5
Irradiation damage in graphene on SiO 2 probed by local mobility measurements
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 26 Pages: 263109
Physical Review B [American Physical Society], Volume: 80 Issue: 24 Pages: 241406
MRS Online Proceedings Library [Springer International Publishing], Volume: 1205 Issue: 1 Pages: 30201-30206
IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 6 Issue: 1 Pages: 012032
Ion irradiation and defect formation in single layer graphene
Carbon [Pergamon], Volume: 47 Issue: 14 Pages: 3201-3207
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493
Toward an ideal Schottky barrier on 3 C-SiC
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 8 Pages: 081907
Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 2 Pages: 023703
Nanoscale current transport through Schottky contacts on wide bandgap semiconductors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 27 Issue: 2 Pages: 789-794
Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 27 Issue: 2 Pages: 868-873
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304
Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale
Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 11 Pages: 112104
Normal and abnormal grain growth in nanostructured gold film
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 5 Pages: 054311
Atomic force microscopy study of the kinetic roughening in nanostructured gold films on SiO2
Nanoscale research letters [SpringerOpen], Volume: 4 Issue: 3 Pages: 262-268
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 4 Pages: 043711
Screening length and quantum capacitance in graphene by scanning probe microscopy
Nano letters [American Chemical Society], Volume: 9 Issue: 1 Pages: 23-29
Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene
Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 305
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 4 Issue: 3 Pages: 262-268
Nanoscale modification of graphene transport properties by ion irradiation
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1203
Electrical properties of the graphene
Physical review B. Condensed matter and materials physics [American Physical Society], Volume: 80 Issue: 24
Screening length and quantum capacitance in graphene by scanning probe microscopy
Nano letters [American Chemical Society], Volume: 9 Issue: 1 Pages: 23-29
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093706
Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2
Nanoscale research letters [SpringerOpen], Volume: 3 Issue: 11 Pages: 454-460
Microstructure of Au nanoclusters formed in and on SiO 2
Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598
Growth of 3C-SiC on Si: Influence of Process Pressure
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211
SENSING ELEMENT FOR GLUCOSE BIOSENSOR
Proceedings of the 12th Italian Conference, Sensors and Microsystems, Napoli, Italy, 12-14 February 2007 [World Scientific], Pages: 3
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 2 Pages: 024310
Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 25 Pages: 252101
XPS and AFM characterization of the enzyme glucose oxidase immobilized on SiO2 surfaces
Langmuir [American Chemical Society], Volume: 24 Issue: 5 Pages: 1965-1972
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
Journal of crystal growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975
He implantation to control B diffusion in crystalline and preamorphized Si
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 26 Issue: 1 Pages: 386-390
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1070
Linköping University Electronic Press
Policy [], Volume: 2007 Issue: 2006 Pages: 2005
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 3 Issue: 11 Pages: 454-460
Electrical properties of self-assembled nano-Schottky diodes
Journal of Nanomaterials [Hindawi], Volume: 2008
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1341
Barrier inhomogeneity and electrical properties of Pt∕ Ga N Schottky contacts
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 11 Pages: 113701
Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 20 Pages: 202104
Layer uniformity in glucose oxidase immobilization on SiO 2 surfaces
Applied Surface Science [North-Holland], Volume: 253 Issue: 23 Pages: 9116-9123
Fluorine counter doping effect in B-doped Si
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 13 Pages: 132101
Nanoscale Research Letters [SpringerOpen], Volume: 2 Issue: 5 Pages: 240-247
He implantation in Si for B diffusion control
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 181-185
Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 336-339
Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814
Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 064306
Carrier concentration and mobility profiling in quantum wells by scanning probe microscopy
Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 446-449
Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 450-453
Temperature behavior of inhomogeneous Pt∕ Ga N Schottky contacts
Applied Physics Letters [American Institute of Physics], Volume: 90 Issue: 9 Pages: 092119
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574
Electron transport properties of calix [4] arene based systems in a metal–molecule–metal junction
New Journal of Chemistry [Royal Society of Chemistry], Volume: 31 Issue: 5 Pages: 756-761
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 545-548
SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES
JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6
Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in Si O 2
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 26 Pages: 263108
Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 24 Pages: 243113
Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379
Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 2 Pages: 022103
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 19 Pages: 191910
Transport localization in heterogeneous Schottky barriers of quantum-defined metal films
EPL (Europhysics Letters) [IOP Publishing], Volume: 74 Issue: 4 Pages: 686
Size effects on the electrical activation of low-energy implanted B in Si
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 468-472
Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 370-374
Drift mobility in quantum nanostructures by scanning probe microscopy
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 4 Pages: 043117
High growth rate process in a SiC horizontal CVD reactor using HCl
Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50
Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 468-472
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 54-61
Submicron confinement effect on electrical activation of B implanted in Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 257-260
B activation enhancement in submicron confined implants in Si
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 13 Pages: 133110
Ion irradiation of inhomogeneous Schottky barriers on silicon carbide
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 12 Pages: 123502
Carrier distribution in quantum nanostructures by scanning capacitance microscopy
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 1 Pages: 014302
Surface and interface analysis [John Wiley & Sons, Ltd.], Volume: 37 Issue: 1 Pages: 71-76
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732
V. Raineri', F. Priolo?, D. Alquier
Gettering and Defect Engineering in Semiconductor Technology...: GADEST...: Proceedings of the... International Autumn Meeting [TTP], Volume: 108 Pages: 395
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs
2023 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 1-4
Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability
2023 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 1-5
SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs
2022 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 3B. 3-1-3B. 3-5
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 400-405
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 160-164
Ni/Heavily-Doped 4H-SiC Schottky Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 411-416
Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects
2021 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 1-6
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 725-730
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 433-438
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 230-235
Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 407-411
Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489
Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 339-344
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 123-126
Atom by atom simulations of nano-materials processing
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 1-2
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1137-1140
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 701-704
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1121-1124
Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1170-1173
Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC (000-1)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1129-1132
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 705-708
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1125-1128
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 424-427
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 428-431
Industrial approach for next generation of power devices based on 4H-SiC.
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 660-666
Electrical properties of graphene contacts to AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 986-989
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 929-932
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 143-147
Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 27-31
Micro-Raman characterization of graphene grown on SiC (000-1)
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 15-18
Current transport in graphene/AlGaN/GaN heterostructures
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 19-22
Nanoscale reliability aspects of insulator onto wide band gap compounds
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65
Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 706-709
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 665-668
Nanoscale Characterization of SiC Interfaces and Devices
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 407-413
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 623-626
Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 1142-1145
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 719-722
A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 699-702
Potentialities of nickel oxide as dielectric for GaN and SiC devices
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 777-780
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 113-116
On the 3D Control of the Functional Structure of Molecular Thin Films
10th International Conference on Nanosciences & Nanotechnologies (NN13) [],
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 825-828
Structural characterization of graphene grown by thermal decomposition of off-axis 4H-SiC (0001)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 141-148
Micro-and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 637-640
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 203-207
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 808-811
Local electrical properties of the 4H-SiC (0001)/graphene interface
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 769-776
Capacitive effects in silicon-supported polyoxometalate-based nanocrystals
XXIV Congresso Nazionale della Società Chimica Italiana [],
Temperature dependent structural evolution of graphene layers on 4H-SiC (0001)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 797-800
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 413-416
Surface corrugation and stacking misorientation in multilayers of graphene on Nickel
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 178 Pages: 125-129
Electrical activity of structural defects in 3C-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 273-276
Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 833-836
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 1211-1214
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 607-610
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 713-716
On the viability of Au/3C-SiC Schottky barrier diodes
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 677-680
Role of ion irradiation induced lattice defects on nanoscale capacitive behavior of graphene
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 156 Pages: 305-311
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 156 Pages: 493-498
Demonstration of defect-induced limitations on the properties of Au/3C-SiC Schottky barrier diodes
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 156 Pages: 331-336
Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 967-970
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 127-130
Growth of 3C-SiC on Si: influence of process pressure
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 211-214
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 603-606
Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 569-572
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 457-460
Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 959-962
Nanoscale current transport at graphene/SiC interface by scanning probe microscopy
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09) [],
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 417-422
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 1341-1344
Micro-Raman investigation of few graphene layers grown on 6H-SiC
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09) [],
Self-ion-induced nanostructures in Ge
2009 MRS fall meeting [MRS], Pages: 350-350
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 131 Pages: 491-496
Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 131 Pages: 357-362
Clustering of gold on 6H-SiC and local nanoscale electrical properties
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 131 Pages: 517-522
Effects of thermal annealing in ion-implanted Gallium Nitride
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 161-163
Effect of He Induced Nanovoid on B Implanted in Si: The Microscopic Mechanism
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 105-110
Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 81-85
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 71-73
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 571-574
Current transport in Ti/Al/Ni/Au ohmic contacts to GaN and AlGaN
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 1027-1030
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 545-548
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 108 Pages: 395-400
Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 729-732
Silicon carbide: Defects and devices
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 108 Pages: 663-670
Measuring Techniques for the Semiconductor’s Parameters
Springer Handbook of Semiconductor Devices [Springer, Cham], Pages: 117-168
Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics
Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 303-350
Schottky Contacts to Silicon Carbide: Physics, Technology and Applications
Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications [Materials Research Forum LLC], Volume: 37 Pages: 127-190
Hot Electron Transistors with Graphene Base for THz Electronics
Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [CRC Press], Pages: 95-115
Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC (0001)
Epitaxial Graphene on Silicon Carbide [Pan Stanford], Pages: 123-154
Nanoscale electrical and structural properties of epitaxial graphene interface with sic (0001)
Epitaxial Graphene on Silicon Carbide [Jenny Stanford Publishing], Pages: 111-141
GraphITA [Springer, Cham], Pages: 125-136
Silicon Carbide and Related Materials 2015
[Trans Tech Publications Ltd],
GraphITA 2011 [Springer, Berlin, Heidelberg], Pages: 99-107
Electronic properties of graphene probed at the nanoscale
Physics and Applications of Graphene-Experiments [IntechOpen],
Transport properties of graphene with nanoscale lateral resolution
Scanning Probe Microscopy in Nanoscience and Nanotechnology 2 [Springer, Berlin, Heidelberg], Pages: 247-285
Self-Assembled Metal Nanostructures in Semiconductor Structures
Toward Functional Nanomaterials [Springer, New York, NY], Pages: 127-171
Carrier transport in advanced semiconductor materials
Applied Scanning Probe Methods X [Springer, Berlin, Heidelberg], Pages: 63-103
FABRICATION AND CHARACTERIZATION OF THE SENSING ELEMENT FOR GLUCOSE BIOSENSOR APPLICATIONS
Sensors And Microsystems [], Pages: 3-13
Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy
Microscopy of Semiconducting Materials [Springer, Berlin, Heidelberg], Pages: 487-490