Primary tabs
Giuseppe Greco received the B.Sc. and M.Sc. Degrees in Physics from the University of Catania (Italy), in 2005 and 2009, respectively. In 2010 joined CNR-IMM as PhD student and in 2013 received the Ph.D. degree in Nanoscience from the Scuola Superiore of the University of Catania, with a thesis on “AlGaN/GaN heterostructures for enhancement mode transistors”. From March 2013 to January 2017 he was post-doc fellow at CNR-IMM in Catania, where he holds a Tenure Track Researcher position since February 2017. From December 2018 he is staff Researcher at CNR-IMM.
His research interest is mainly focused on the processing and characterization of semiconductor devices based on Gallium Nitride (GaN) and related wide band gap materials. He is co-author of more than 100 publications on international journals and conference proceedings, with an h-index=26 (source Scopus).
Scientific Productions
Applied Surface Science [North-Holland], Volume: 679 Pages: 161316
Applied Surface Science [North-Holland], Volume: 674 Pages: 160885
AIP Advances [AIP Publishing], Volume: 14 Issue: 10
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 394-395
Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 97-99
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs
IEEE Electron Device Letters [IEEE],
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition
Materials Science in Semiconductor Processing [Pergamon], Volume: 174 Pages: 108244
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 10
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 1
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation
Materials Science in Semiconductor Processing [Pergamon], Volume: 168 Pages: 107871
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
Nanomaterials [MDPI], Volume: 13 Issue: 21 Pages: 2837
Crystals [MDPI], Volume: 13 Issue: 9 Pages: 1309
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Microelectronic Engineering [Elsevier], Volume: 276 Pages: 112009
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
Applied Surface Science [North-Holland], Volume: 606 Pages: 154896
Horticulturae [MDPI], Volume: 9 Issue: 1 Pages: 15
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 233506
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells
Materials [MDPI], Volume: 15 Issue: 21 Pages: 7790
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors
Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 16 Pages: 165105
Advanced Materials Interfaces [], Pages: 2201502
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 14 Issue: 31 Pages: 36287-36287
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
Applied Surface Science [North-Holland], Volume: 579 Pages: 152136
Materials [Multidisciplinary Digital Publishing Institute], Volume: 15 Issue: 3 Pages: 830
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182
Towards ballistic vertical transistors by graphene integration with nitride semiconductors
Il nuovo cimento C [Societa italiana di fisica], Volume: 45 Issue: 6 Pages: 1-4
ACS Applied Electronic Materials [American Chemical Society],
How Coffee Capsules Affect the Volatilome in Espresso Coffee
Separations [Multidisciplinary Digital Publishing Institute], Volume: 8 Issue: 12 Pages: 248
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3316
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 13 Issue: 26 Pages: 31248-31259
Journal of Applied Physics [AIP Publishing LLC], Volume: 129 Issue: 23 Pages: 234501
AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 12 Pages: 125017
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 54 Issue: 5 Pages: 055101
Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705
Technologies for Normally-off GaN HEMTs
Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 137-175
Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 10 Pages: 105004
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502
Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399
Sensors [Multidisciplinary Digital Publishing Institute], Volume: 20 Issue: 10 Pages: 2831
Journal of nanoscience and nanotechnology [American Scientific Publishers], Volume: 19 Issue: 11 Pages: 7398-7403
High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 10 Pages: 1599
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157
Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655
physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393
Materials Science in Semiconductor Processing [ELSEVIER SCI LTD], Volume: 102
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468
Physics and technology of gallium nitride materials for power electronics
LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008
Review of technology for normally-off HEMTs with p-GaN gate
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 96-106
Barrier inhomogeneity of Ni Schottky contacts to bulk GaN
physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117
physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653
Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon],
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77
Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390
physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764
Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator
IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator
IEEE Transactions on Electron Devices [IEEE],
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366
Exploring FPGA‐Based Lock‐In Techniques for Brain Monitoring Applications
Electronics [Multidisciplinary Digital Publishing Institute], Volume: 6 Issue: 1 Pages: 18
Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 4 Pages: 045701
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101
physica status solidi (a) [],
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [],
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Ohmic contacts to Gallium Nitride materials
Applied Surface Science [North-Holland], Volume: 383 Pages: 324-345
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [],
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [],
IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735 - 2741
Challenges in graphene integration for high-frequency electronics
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1749 Issue: 1 Pages: 020004
Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Current mapping in graphene contacts to AlGaN/GaN heterostructures
Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705
Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984
physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 14 Pages: 142903
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
Applied surface science [North-Holland], Volume: 314 Pages: 546-551
Challenges for energy efficient wide band gap semiconductor power devices
physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 6 Pages: 063117
Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55
Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018
Recent advances on dielectrics technology for SiC and GaN power devices
Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680
Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 20 Pages: 201604
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 11 Pages: 112905
Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717
Nanoscale Probing of Interfaces in GaN for Devices Applications
ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901
Critical issues for interfaces to p-type SiC and GaN in power devices
Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063511
AlGaN/GaN heterostructures for enhancement mode transistors
Università degli Studi di Catania [],
Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 12 Pages: 123703
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132
Silicon photomultipliers for radioactive waste online monitoring
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 652 Issue: 1 Pages: 143-145
A thermal neutron mini-detector with SiPM and scintillating fibers
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 652 Issue: 1 Pages: 355-358
Development of a thermal neutron detector based on scintillating fibers and silicon photomultipliers
Review of Scientific Instruments [American Institute of Physics], Volume: 81 Issue: 9 Pages: 093503
VIGOR: Sviluppo geotermico nelle Regioni della Convergenza
Progetto VIGOR—Valutazione del Potenziale Geotermico delle Regioni della Convergenza, POI Energie Rinnovabili e Risparmio Energetico [], Volume: 2013
Ni/Heavily-Doped 4H-SiC Schottky Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 411-416
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 18-22
Study of behavior of p-gate in Power GaN under positive voltage
2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 725-730
2019 41st Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC) [IEEE], Pages: 60-66
Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489
Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482
FPGA based digital lock-in amplifier for fNIRS systems
Applications in Electronics Pervading Industry, Environment and Society: APPLEPIES 2017 6 [Springer International Publishing], Pages: 33-39
Functional Near Infrared Spectroscopy System Validation for Simultaneous EEG-FNIRS Measurements
Applications in Electronics Pervading Industry, Environment and Society: APPLEPIES 2018 6 [Springer International Publishing], Pages: 45-52
2018 International Semiconductor Conference (CAS) [IEEE], Pages: 7-16
Functional Near Infrared Spectroscopy System Validation for Simultaneous EEG-FNIRS Measurements
International Conference on Applications in Electronics Pervading Industry, Environment and Society [Springer, Cham], Pages: 45-52
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 339-344
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 377-380
FPGA based digital lock-in amplifier for fNIRS systems
International Conference on Applications in Electronics Pervading Industry, Environment and Society [Springer, Cham], Pages: 33-39
Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1170-1173
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1137-1140
Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1178-1181
Electrical properties of graphene contacts to AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 986-989
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 999-1002
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 428-431
Nanoscale reliability aspects of insulator onto wide band gap compounds
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65
Current transport in graphene/AlGaN/GaN heterostructures
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 19-22
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 665-668
Potentialities of nickel oxide as dielectric for GaN and SiC devices
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 777-780
Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 1295-1298
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 203-207
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 808-811
An online monitoring system for nuclear waste storage
2009 1st International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications [IEEE], Pages: 1-4
Automatic Layout Optimization of Power Mosfets Using An Effective Population-Based Algorithm
SIAM Conference on Optimization-OP 2008 [], Pages: 64-64
Chronic pancreatitis: problems in diagnosis and treatment, two different cases.”
Congresso Nazionale Associazione Italiana Studiuo Pancreas [], Volume: 1 Pages: 102-104
Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics
Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 303-350
Hot Electron Transistors with Graphene Base for THz Electronics
Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [CRC Press], Pages: 95-115