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Surname: 
Greco
Firstname: 
Giuseppe
Position: 
Staff
Profile: 
Researcher
Phone: 
+39 0955968243
Curriculum: 

Giuseppe Greco received the B.Sc. and M.Sc. Degrees in Physics from the University of Catania (Italy), in 2005 and 2009, respectively. In 2010 joined CNR-IMM as PhD student and in 2013 received the Ph.D. degree in Nanoscience from the Scuola Superiore of the University of Catania, with a thesis on “AlGaN/GaN heterostructures for enhancement mode transistors”. From March 2013 to January 2017 he was post-doc fellow at CNR-IMM in Catania, where he holds a Tenure Track Researcher position since February 2017.

His research interest is mainly focused on the processing and characterization of semiconductor devices based on Gallium Nitride (GaN) and related wide band gap materials. He is co-author of more than 60 publications on international journals and conference proceedings, with an  h-index=12 (source Scopus).

Source: 
Catania HQ

Scientific Productions

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Fabrizio Roccaforte

Technologies for Normally-off GaN HEMTs

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [John Wiley & Sons],

Marilena Vivona, Giuseppe Greco, Gabriele Bellocchi, Luca Zumbo, Salvatore Di Franco, Mario Saggio, Simone Rascunà, Fabrizio Roccaforte

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

arXiv preprint arXiv:2007.04038 [],

Monia Spera, Giuseppe Greco, Andrea Severino, Marilena Vivona, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502

Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Ewa Grzanka, Mike Leszczynski, Filippo Giannazzo, Fabrizio Roccaforte

Thermal annealing effect on electrical and structural properties of Tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Semiconductor Science and Technology [IOP Publishing],

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393

Alberto Sciuto, Antonino La Magna, Giuseppe GN Angilella, Renato Pucci, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo, Ioannis Deretzis

Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399

Antonio Maria Chiarelli, David Perpetuini, Pierpaolo Croce, Giuseppe Greco, Leonardo Mistretta, Raimondo Rizzo, Vincenzo Vinciguerra, Mario Francesco Romeo, Filippo Zappasodi, Arcangelo Merla, Pier Giorgio Fallica, Günter Edlinger, Rupert Ortner, Giuseppe Costantino Giaconia

Fiberless, Multi-Channel fNIRS-EEG System Based on Silicon Photomultipliers: Towards Sensitive and Ecological Mapping of Brain Activity and Neurovascular Coupling

Sensors [Multidisciplinary Digital Publishing Institute], Volume: 20 Issue: 10 Pages: 2831

Giuseppe Greco, Alessandra Moncada, Carmelo Sunseri, Rosalinda Inguanta

Behavior Modification of Nanostructured PbO2 Electrodes in Lead Acid Batteries Changing Electrolyte Concentration and Separator

Journal of nanoscience and nanotechnology [American Scientific Publishers], Volume: 19 Issue: 11 Pages: 7398-7403

Filippo Giannazzo, Giuseppe Greco, Emanuela Schilirò, Raffaella Lo Nigro, Ioannis Deretzis, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Sebastiano Ravesi, Eric Frayssinet, Adrien Michon, Yvon Cordier

High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354

Emanuela Schilirò, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, Fabrizio Roccaforte, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Marcin Krysko, Adrien Michon, Yvon Cordier, Ildiko Cora, Bela Pecz, Hassan Gargouri, Raffaella Lo Nigro

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39

S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, S Di Franco, F Giannazzo, G Greco, F Roccaforte, M Saggio

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66

F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, F Iucolano, G Greco

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170

Monia Spera, Giuseppe Greco, R Lo Nigro, Corrado Bongiorno, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298

Pawel Prystawko, F Giannazzo, M Krysko, J Smalc-Koziorowska, E Schilirò, G Greco, F Roccaforte, M Leszczynski

Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157

Monia Spera, Domenico Corso, Salvatore Di Franco, Giuseppe Greco, Andrea Severino, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Effect of high temperature annealing (T> 1650° C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in CVD‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393

Giuseppe Greco, Anelia Kakanakova-Gueorguieva, Piotr Kruszewski, Bela Pecz

Editorial of the Special Issue" New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing"

Materials Science in Semiconductor Processing [ELSEVIER SCI LTD], Volume: 102

Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, Fabrizio Roccaforte

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Silvia Scalese, Corrado Bongiorno, Marco Cannas, Filippo Giannazzo, Fabrizio Roccaforte

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 41 Pages: 625-681

F Giannazzo, G Greco, E Schilirò, S Di Franco, I Deretzis, G Nicotra, A La Magna, F Roccaforte

Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ferdinando Iucolano, Ildiko Cora, Bela Pecz, Fabrizio Roccaforte

Barrier inhomogeneity of Ni Schottky contacts to bulk GaN

physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors

physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653

Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Ferdinando Iucolano, Raffaella Lo Nigro, Fabrizio Roccaforte

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Materials Science in Semiconductor Processing [Pergamon],

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Ferdinando Iucolano, Mario Saggio

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77

M Vivona, G Greco, C Bongiorno, R Lo Nigro, S Scalese, F Roccaforte

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Filippo Giannazzo, Fabrizio Roccaforte

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390

G Greco, S Di Franco, F Iucolano, F Giannazzo, F Roccaforte

Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2

Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Giuseppe Nicotra, Corrado Spinella, Michelangelo Scopelliti, Bruno Pignataro, Simonpietro Agnello, Fabrizio Roccaforte

Ambipolar MoS2 transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator

IEEE Transactions on Electron Devices [IEEE],

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pecz, Rositsa Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366

Giuseppe Giaconia, Giuseppe Greco, Leonardo Mistretta, Raimondo Rizzo

Exploring FPGA‐Based Lock‐In Techniques for Brain Monitoring Applications

Electronics [Multidisciplinary Digital Publishing Institute], Volume: 6 Issue: 1 Pages: 18

Giuseppe Greco, Filippo Giannazzo, Fabrizio Roccaforte

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 4 Pages: 045701

Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Raffaella Lo Nigro

Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

physica status solidi (a) [],

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ildikó Cora, Béla Pécz

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [],

F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, F Roccaforte

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al 2 O 3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Ohmic contacts to Gallium Nitride materials

Applied Surface Science [North-Holland], Volume: 383 Pages: 324-345

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [],

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [],

Fabrizio Roccaforte Giuseppe Greco, Ferdinando Iucolano, Salvatore Di Franco, Corrado Bongiorno, Alfonso Patti

Effects of annealing treatments on the properties of Al/Ti/p-GaN interfaces for normally OFF p-GaN HEMTs

IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735 - 2741

F Giannazzo, G Fisichella, G Greco, F Roccaforte

Challenges in graphene integration for high-frequency electronics

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1749 Issue: 1 Pages: 020004

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Fabrizio Roccaforte, Filippo Giannazzo

Current mapping in graphene contacts to AlGaN/GaN heterostructures

Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1

M Vivona, G Greco, R Lo Nigro, C Bongiorno, F Roccaforte

Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705

Raffaella Lo Nigro, Gabriele Fisichella, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

An insight into the epitaxial nanostructures of NiO and CeO 2 thin film dielectrics for AlGaN/GaN heterostructures

Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Cristina Tudisco, Guglielmo Guido Condorelli, Salvatore Di Franco, Fabrizio Roccaforte, Raffaella Lo Nigro

Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Filippo Giannazzo, Pawel Prystawko, Piotr Kruszewski, Marcin Krysko, Ewa Grzanka, Michał Leszczynski, Cristina Tudisco, Guglielmo Guido Condorelli, Fabrizio Roccaforte

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 14 Pages: 142903

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Applied surface science [North-Holland], Volume: 314 Pages: 546-551

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio

Challenges for energy efficient wide band gap semiconductor power devices

physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071

G Fisichella, G Greco, F Roccaforte, F Giannazzo

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 6 Pages: 063117

Raffaella Lo Nigro, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55

M Vivona, G Greco, F Giannazzo, R Lo Nigro, S Rascunà, M Saggio, F Roccaforte

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC

Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018

F Roccaforte, P Fiorenza, G Greco, M Vivona, R Lo Nigro, F Giannazzo, A Patti, M Saggio

Recent advances on dielectrics technology for SiC and GaN power devices

Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201

Ferdinando Iucolano, Giuseppe Greco, Fabrizio Roccaforte

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 20 Pages: 201604

P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 11 Pages: 112905

G Greco, F Giannazzo, F Iucolano, R Lo Nigro, F Roccaforte

Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717

Filippo Giannazzo, Antonino Scuderi, Giuseppe Greco, Patrick Fiorenza, Raffaela Lo Nigro, Michal Leszczyński, Fabrizio Roccaforte

Nanoscale Probing of Interfaces in GaN for Devices Applications

ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901

F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, R Lo Nigro, M Saggio, M Leszczyński, P Pristawko, V Raineri

Critical issues for interfaces to p-type SiC and GaN in power devices

Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Vito Raineri, Graziella Malandrino, Raffaella Lo Nigro

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063511

Giuseppe Greco

AlGaN/GaN heterostructures for enhancement mode transistors

Università degli Studi di Catania [],

G Greco, P Prystawko, M Leszczyński, R Lo Nigro, V Raineri, F Roccaforte

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 12 Pages: 123703

Giuseppe Greco, Filippo Giannazzo, Alessia Frazzetto, Vito Raineri, Fabrizio Roccaforte

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132

Paolo Finocchiaro, M Barbagallo, L Cosentino, G Greco, G Guardo, A Pappalardo, C Scirè, S Scirè

Silicon photomultipliers for radioactive waste online monitoring

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 652 Issue: 1 Pages: 143-145

M Barbagallo, L Cosentino, G Greco, G Guardo, RM Montereali, A Pappalardo, C Scirè, S Scirè, MA Vincenti, P Finocchiaro

A thermal neutron mini-detector with SiPM and scintillating fibers

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 652 Issue: 1 Pages: 355-358

Massimo Barbagallo, Luigi Cosentino, Giuseppe Greco, Rosa Maria Montereali, Alfio Pappalardo, Carlotta Scirè, Sergio Scirè, Maria Aurora Vincenti, Paolo Finocchiaro

Development of a thermal neutron detector based on scintillating fibers and silicon photomultipliers

Review of Scientific Instruments [American Institute of Physics], Volume: 81 Issue: 9 Pages: 093503

Fabrizio Roccaforte, Monia Spera, Salvatore Di Franco, Raffaella Lo Nigro, Patrick Fiorenza, Filippo Giannazzo, Ferdinando Iucolano, Giuseppe Greco

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 725-730

AM Chiarelli, D Perpetuini, G Greco, L Mistretta, R Rizzo, V Vinciguerra, MF Romeo, A Merla, PG Fallica, GC Giaconia

Wearable, Fiber-less, Multi-Channel System for Continuous Wave Functional Near Infrared Spectroscopy Based on Silicon Photomultipliers Detectors and Lock-In Amplification

2019 41st Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC) [IEEE], Pages: 60-66

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Salvatore di Franco, Domenico Corso, Patrick Fiorenza, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489

Patrick Fiorenza, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Sylvain Monnoye, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza

Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT

2018 International Semiconductor Conference (CAS) [IEEE], Pages: 7-16

GC Giaconia, G Greco, L Mistretta, R Rizzo, A Merla, AM Chiarelli, F Zappasodi, G Edlinger

Functional Near Infrared Spectroscopy System Validation for Simultaneous EEG-FNIRS Measurements

International Conference on Applications in Electronics Pervading Industry, Environment and Society [Springer, Cham], Pages: 45-52

Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 339-344

Marilena Vivona, Giuseppe Greco, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Silvia Scalese, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 377-380

G Costantino Giaconia, Giuseppe Greco, Leonardo Mistretta, Raimondo Rizzo

FPGA based digital lock-in amplifier for fNIRS systems

International Conference on Applications in Electronics Pervading Industry, Environment and Society [Springer, Cham], Pages: 33-39

Giuseppe Greco, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Domenico Corso, Emanuele Smecca, Alessandra Alberti, Alfonso Patti, Fabrizio Roccaforte

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1170-1173

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Raffaella Lo Nigro, Emanuela Schilirò, Fabrizio Roccaforte, Filippo Giannazzo

Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1137-1140

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Antonino Parisi, Santo Reina, Alfonso Patti, Fabrizio Roccaforte

Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1178-1181

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Electrical properties of graphene contacts to AlGaN/GaN heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 986-989

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Microstructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN Heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 999-1002

Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 428-431

G Fisichella, G Greco, S Ravesi, F Roccaforte, F Giannazzo

Current transport in graphene/AlGaN/GaN heterostructures

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 19-22

P Fiorenza, G Greco, M Vivona, F Giannazzo, R Lo Nigro, F Roccaforte

Nanoscale reliability aspects of insulator onto wide band gap compounds

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65

Marilena Vivona, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Fabrizio Roccaforte, Alessia Frazzetto, Simone Rascunà, Edoardo Zanetti, Alfio Guarnera, Mario Saggio

Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n-and p-type implanted 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 665-668

Raffaella Lo Nigro, Giuseppe Greco, L Swanson, G Fisichella, Patrick Fiorenza, Filippo Giannazzo, S Di Franco, C Bongiorno, A Marino, G Malandrino, Fabrizio Roccaforte

Potentialities of nickel oxide as dielectric for GaN and SiC devices

Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 777-780

Giuseppe Greco, Fabrizio Roccaforte, R Lo Nigro, C Bongiorno, S Di Franco, P Prystawko, M Leszczyński, Vito Raineri

Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing

Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 1295-1298

Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Michał Leszczyński, Pawel Prystawko, Edoardo Zanetti, Mario Saggio, Vito Raineri

Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications

Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 203-207

Fabrizio Roccaforte, Giuseppe Greco, Ming Hung Weng, Filippo Giannazzo, Vito Raineri

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers

Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 808-811

Alfio Pappalardo, Massimo Barbagallo, Vincenzo Bellini, Marco Capogni, Luigi Cosentino, Vincenzo Febbraro, Paolo Finocchiaro, Giuseppe Greco, Carlotta Scirè, Sergio Scirè

An online monitoring system for nuclear waste storage

2009 1st International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications [IEEE], Pages: 1-4

F Fiorante, G Greco, G Nicosia, S Rinaudo, G Stracquadanio

Automatic Layout Optimization of Power Mosfets Using An Effective Population-Based Algorithm

SIAM Conference on Optimization-OP 2008 [], Pages: 64-64

G Castello, La GRECA G, Di STEFANO A, G Greco, M Sofia, E Grasso, F Barbagallo, D Russello

Chronic pancreatitis: problems in diagnosis and treatment, two different cases.”

Congresso Nazionale Associazione Italiana Studiuo Pancreas [], Volume: 1 Pages: 102-104

Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte, Chandreswar Mahata, Mario Lanza

Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics

Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 303-350

Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte, Roy Dagher, Adrien Michon, Yvon Cordier

Hot Electron Transistors with Graphene Base for THz Electronics

Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [CRC Press], Pages: 95-115

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