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Giuseppe Greco received the B.Sc. and M.Sc. Degrees in Physics from the University of Catania (Italy), in 2005 and 2009, respectively. In 2010 joined CNR-IMM as PhD student and in 2013 received the Ph.D. degree in Nanoscience from the Scuola Superiore of the University of Catania, with a thesis on “AlGaN/GaN heterostructures for enhancement mode transistors”. From March 2013 to January 2017 he was post-doc fellow at CNR-IMM in Catania, where he holds a Tenure Track Researcher position since February 2017.
His research interest is mainly focused on the processing and characterization of semiconductor devices based on Gallium Nitride (GaN) and related wide band gap materials. He is co-author of more than 60 publications on international journals and conference proceedings, with an h-index=12 (source Scopus).
Scientific Productions
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
arXiv preprint arXiv:2102.08927 [],
AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 12 Pages: 125017
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 54 Issue: 5 Pages: 055101
Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705
Technologies for Normally-off GaN HEMTs
Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 137-175
Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 10 Pages: 105004
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502
Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399
Sensors [Multidisciplinary Digital Publishing Institute], Volume: 20 Issue: 10 Pages: 2831
Journal of nanoscience and nanotechnology [American Scientific Publishers], Volume: 19 Issue: 11 Pages: 7398-7403
High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 10 Pages: 1599
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279
Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655
physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393
Materials Science in Semiconductor Processing [ELSEVIER SCI LTD], Volume: 102
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468
Physics and technology of gallium nitride materials for power electronics
LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008
Review of technology for normally-off HEMTs with p-GaN gate
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 96-106
Barrier inhomogeneity of Ni Schottky contacts to bulk GaN
physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117
physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653
Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon],
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77
Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390
physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764
Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator
IEEE Transactions on Electron Devices [IEEE],
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator
IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366
Exploring FPGA‐Based Lock‐In Techniques for Brain Monitoring Applications
Electronics [Multidisciplinary Digital Publishing Institute], Volume: 6 Issue: 1 Pages: 18
Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 4 Pages: 045701
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101
physica status solidi (a) [],
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [],
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Ohmic contacts to Gallium Nitride materials
Applied Surface Science [North-Holland], Volume: 383 Pages: 324-345
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [],
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [],
IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735 - 2741
Challenges in graphene integration for high-frequency electronics
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1749 Issue: 1 Pages: 020004
Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Current mapping in graphene contacts to AlGaN/GaN heterostructures
Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705
Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984
physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 14 Pages: 142903
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
Applied surface science [North-Holland], Volume: 314 Pages: 546-551
Challenges for energy efficient wide band gap semiconductor power devices
physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 6 Pages: 063117
Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55
Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018
Recent advances on dielectrics technology for SiC and GaN power devices
Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680
Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 20 Pages: 201604
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 11 Pages: 112905
Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717
Nanoscale Probing of Interfaces in GaN for Devices Applications
ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901
Critical issues for interfaces to p-type SiC and GaN in power devices
Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063511
AlGaN/GaN heterostructures for enhancement mode transistors
Università degli Studi di Catania [],
Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 12 Pages: 123703
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132
Silicon photomultipliers for radioactive waste online monitoring
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 652 Issue: 1 Pages: 143-145
A thermal neutron mini-detector with SiPM and scintillating fibers
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 652 Issue: 1 Pages: 355-358
Development of a thermal neutron detector based on scintillating fibers and silicon photomultipliers
Review of Scientific Instruments [American Institute of Physics], Volume: 81 Issue: 9 Pages: 093503
Study of behavior of p-gate in Power GaN under positive voltage
2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 725-730
2019 41st Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC) [IEEE], Pages: 60-66
Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489
Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482
2018 International Semiconductor Conference (CAS) [IEEE], Pages: 7-16
Functional Near Infrared Spectroscopy System Validation for Simultaneous EEG-FNIRS Measurements
International Conference on Applications in Electronics Pervading Industry, Environment and Society [Springer, Cham], Pages: 45-52
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 339-344
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 377-380
FPGA based digital lock-in amplifier for fNIRS systems
International Conference on Applications in Electronics Pervading Industry, Environment and Society [Springer, Cham], Pages: 33-39
Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1170-1173
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1137-1140
Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1178-1181
Electrical properties of graphene contacts to AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 986-989
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 999-1002
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 428-431
Current transport in graphene/AlGaN/GaN heterostructures
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 19-22
Nanoscale reliability aspects of insulator onto wide band gap compounds
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 665-668
Potentialities of nickel oxide as dielectric for GaN and SiC devices
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 777-780
Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 1295-1298
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 203-207
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 808-811
An online monitoring system for nuclear waste storage
2009 1st International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications [IEEE], Pages: 1-4
Automatic Layout Optimization of Power Mosfets Using An Effective Population-Based Algorithm
SIAM Conference on Optimization-OP 2008 [], Pages: 64-64
Chronic pancreatitis: problems in diagnosis and treatment, two different cases.”
Congresso Nazionale Associazione Italiana Studiuo Pancreas [], Volume: 1 Pages: 102-104
Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics
Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 303-350
Hot Electron Transistors with Graphene Base for THz Electronics
Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [CRC Press], Pages: 95-115