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Scientific Productions
Microelectronic Engineering [Elsevier], Pages: 112103
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
Applied Surface Science [North-Holland], Volume: 630 Pages: 157476
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
Applied Surface Science [North-Holland], Volume: 579 Pages: 152136
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures
Semiconductor Science and Technology [IOP Publishing], Volume: 37 Issue: 1 Pages: 015012
arXiv preprint arXiv:2108.09542 [],
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
Carbon [Pergamon], Volume: 169 Pages: 172-181
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide (SiC) based devices
arXiv preprint arXiv:2004.10988 [],
Journal of Crystal Growth [North-Holland], Pages: 125624
Journal of Materials Chemistry C [Royal Society of Chemistry], Volume: 8 Issue: 45 Pages: 16168-16179
Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen
Carbon [Pergamon], Volume: 149 Pages: 546-555
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298
Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655
Physics and technology of gallium nitride materials for power electronics
LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117
Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307
Applied Surface Science [North-Holland], Volume: 427 Pages: 81-91
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon],
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77
Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335
Applied Surface Science [North-Holland],
Advances in the fabrication of graphene transistors on flexible substrates
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140
Rivista di diritto internazionale [A. Giuffrè], Volume: 100 Issue: 2 Pages: 565-576
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
AIP Advances [AIP Publishing LLC], Volume: 6 Issue: 7 Pages: 075021
Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
RSC advances [Royal Society of Chemistry], Volume: 6 Issue: 37 Pages: 30813-30823
Diritti umani e diritto internazionale [Societą editrice il Mulino], Issue: 1 Pages: 137-156
Diritti umani e diritto internazionale [], Volume: 10 Pages: 137-156
UN Security Council Resolution 2249 and the Use of Force Against ISIS in International Law
Diritti umani e diritto internazionale [Società editrice il Mulino], Issue: 1 Pages: 137-156
ChemistryOpen [Wiley-Blackwell], Volume: 4 Issue: 4 Pages: 523
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705
Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468
ChemistryOpen [Wiley-Blackwell], Volume: 4 Issue: 4
Diritti umani e diritto internazionale [Società editrice il Mulino], Issue: 3 Pages: 681-689
Diritti umani e diritto internazionale [Società editrice il Mulino], Issue: 3 Pages: 681-689
Challenges for energy efficient wide band gap semiconductor power devices
physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071
Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55
Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018
Recent advances on dielectrics technology for SiC and GaN power devices
Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18
Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 152-162
Piezoelectric domains in BiFeO 3 films grown via MOCVD: Structure/property relationship
Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 168-173
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 11 Pages: 112905
Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717
physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242
Nanoscale Probing of Interfaces in GaN for Devices Applications
ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439
Rivista di diritto internazionale [A. Giuffrè], Volume: 96 Issue: 3 Pages: 812-846
Rivista di diritto internazionale [A. Giuffrè], Volume: 96 Issue: 3 Pages: 812-846
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901
Critical issues for interfaces to p-type SiC and GaN in power devices
Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333
Nanoscale Probing of Interfaces in GaN for Devices Applications
Meeting Abstracts [The Electrochemical Society], Issue: 30 Pages: 2568-2568
Materials Chemistry and Physics [Elsevier], Volume: 133 Issue: 2-3 Pages: 1108-1115
Materials Chemistry and Physics [Elsevier], Volume: 133 Issue: 2 Pages: 1108-1115
Influence of substrate dielectric permittivity on local capacitive behavior in graphene
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 989-992
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063511
Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 12 Pages: 123703
Scanning probe microscopy on heterogeneous CaCu 3 Ti 4 O 12 thin films
Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-4
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-6
Mapping the density of scattering centers limiting the electron mean free path in graphene
Nano letters [American Chemical Society], Volume: 11 Issue: 11 Pages: 4612-4618
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302
Nanoscale [Royal Society of Chemistry], Volume: 3 Issue: 3 Pages: 1171-1175
CaCu 3 Ti 4 O 12 single crystals: insights on growth and nanoscopic investigation
CrystEngComm [Royal Society of Chemistry], Volume: 13 Issue: 11 Pages: 3900-3904
Human Rights Review [Springer Netherlands], Volume: 11 Issue: 4 Pages: 531-564
Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing
AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 75-78
High capacitance density by CaCu 3 Ti 4 O 12 thin films
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 7 Pages: 074103
CrystEngComm [Royal Society of Chemistry], Volume: 12 Issue: 11 Pages: 3858-3865
The Italian Yearbook of International Law Online [Brill Nijhoff], Volume: 20 Issue: 1 Pages: 1-7
Probing dielectric ceramics surface at sub-micrometer scale
IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012038
Detection of heterogeneities in single-crystal CaCu3Ti4O12 using Conductive Atomic Force Microscopy
IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012018
IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012005
Probing heterogeneity in ptcr-BaTiO3 thermistors by local probe electrical measurements
IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012037
Metal-organic chemical vapour deposition of Nd2/3 Cu3Ti4O12 films
IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012019
La disciplina dei militari impegnati all’estero in missioni umanitarie: in margine al caso Lozano
DIRITTI UMANI E DIRITTO INTERNAZIONALE [FrancoAngeli Editore],
MRS Online Proceedings Library [Springer International Publishing], Volume: 1232 Issue: 1 Pages: 70101-70106
ECS Transactions [IOP Publishing], Volume: 25 Issue: 8 Pages: 135
MOCVD of complex oxide systems: from precursor chemistry to applications
ECS Transactions [IOP Publishing], Volume: 25 Issue: 8 Pages: 125
Inorganica Chimica Acta [Elsevier], Volume: 362 Issue: 12 Pages: 4623-4629
Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale
Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 11 Pages: 112104
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 6 Pages: 061634
Diritti umani e diritto internazionale [FrancoAngeli Editore],
Effects of high temperature annealing on MOCVD grown CaCu3Ti4O12 films on LaAlO3 substrates
Surface and Coatings Technology [Elsevier], Volume: 201 Issue: 22-23 Pages: 9243-9247
Effects of high temperature annealing on MOCVD grown CaCu 3 Ti 4 O 12 films on LaAlO 3 substrates
Surface and Coatings Technology [Elsevier], Volume: 201 Issue: 22 Pages: 9243-9247
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 6 Pages: 061923
Nickel nanostructured materials from liquid phase photodeposition
Journal of Nanoparticle Research [Kluwer Academic Publishers], Volume: 9 Issue: 4 Pages: 611-619
Chemical stability of CaCu 3 Ti 4 O 12 thin films grown by MOCVD on different substrates
Thin Solid Films [Elsevier], Volume: 515 Issue: 16 Pages: 6470-6473
Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates
Thin Solid Films [Elsevier], Volume: 515 Issue: 16 Pages: 6470-6473
Defects induced anomalous breakdown kinetics in Pr 2 O 3 by micro-and nano-characterization
Microelectronics Reliability [Pergamon], Volume: 47 Issue: 4 Pages: 640-644
CaCu3Ti4O12, a Novel Material for Capacitive Applications: Thin Film Growth and Characterization
ECS Transactions [IOP Publishing], Volume: 6 Issue: 3 Pages: 385
Defects induced anomalous breakdown kinetics in Pr2O3 by micro-and nano-characterization
Microelectronics Reliability [Pergamon], Volume: 47 Issue: 4-5 Pages: 640-644
Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 441-445
Inorganica chimica acta [Elsevier], Volume: 360 Issue: 3 Pages: 1138-1142
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 501-504
Rivista di diritto internazionale [A. Giuffrè], Volume: 90 Issue: 4 Pages: 1106-1115
APPLIED PHYSICS LETTERS [American Institute of Physics], Volume: 91 Issue: 6 Pages: 061923
Praseodymium based high-k dielectrics grown on Si and SiC substrates
Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 6 Pages: 1073-1078
Structural–optical study of high-dielectric-constant oxide films
Applied surface science [North-Holland], Volume: 253 Issue: 1 Pages: 322-327
The Journal of Physical Chemistry B [American Chemical Society], Volume: 110 Issue: 35 Pages: 17460-17467
Applied Catalysis A: General [Elsevier], Volume: 306 Pages: 51-57
CeO2 films by Metal-Organic Chemical Vapor Deposition
Electrochemical Society Meeting Abstracts 207 [The Electrochemical Society, Inc.], Issue: 30 Pages: 1094-1094
J. Phys. Chem. B [], Volume: 110 Pages: 17460-7
Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 15 Issue: 5 Pages: 838-845
Materials Science and Engineering: B [Elsevier], Volume: 118 Issue: 1-3 Pages: 117-121
Materials Science and Engineering: B [Elsevier], Volume: 118 Issue: 1-3 Pages: 192-196
Journal of Materials Chemistry [Royal Society of Chemistry], Volume: 15 Issue: 23 Pages: 2328-2337
GraphITA [Springer, Cham], Pages: 125-136
GraphITA 2011 [Springer, Berlin, Heidelberg], Pages: 99-107
Scanning Probe Microscopy in Nanoscience and Nanotechnology [Springer, Berlin, Heidelberg], Pages: 613-646
MOCVD Growth of Rare Earth Oxides: The Case of the Praseodymium/Oxygen System
Rare Earth Oxide Thin Films [Springer, Berlin, Heidelberg], Pages: 33-51
Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 685-688
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 428-431
Thermal and plasma-enhanced atomic layer deposition of hafnium oxide on semiconductor substrates
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 112-115
Nanoscale reliability aspects of insulator onto wide band gap compounds
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65
Nanoscale Imaging of CaCu3Ti4O12 Dielectric Properties: The Role of Surface Defects
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 131 Pages: 443-448
Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 501-504
Electron Transport and Dielectric Breakdown Kinetics in Pr2O3 High K Films
Advances in Science and Technology [Trans Tech Publications Ltd], Volume: 46 Pages: 21-26