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Scientific Productions
AIP Advances [AIP Publishing], Volume: 14 Issue: 10
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 362 Pages: 7-12
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 24
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition
Materials Science in Semiconductor Processing [Pergamon], Volume: 174 Pages: 108244
Interface Properties of MoS2 van der Waals Heterojunctions with GaN
Nanomaterials [MDPI], Volume: 14 Issue: 2 Pages: 133
Microelectronic Engineering [Elsevier], Pages: 112103
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
Applied Surface Science [North-Holland], Volume: 630 Pages: 157476
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638
Electrochemical performance of gold-decorated graphene electrodes integrated with SiC
Microelectronic Engineering [Elsevier], Pages: 112042
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Microelectronic Engineering [Elsevier], Volume: 276 Pages: 112009
Microelectronic Engineering [Elsevier], Pages: 111967
physica status solidi (RRL)–Rapid Research Letters [], Pages: 2300218
Electron Irradiation Effects on Single‐Layer MoS2 Obtained by Gold‐Assisted Exfoliation
physica status solidi (a) [], Volume: 219 Issue: 21 Pages: 2200096
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors
Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 16 Pages: 165105
Advanced Materials Interfaces [], Pages: 2201502
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions
Advanced Materials Interfaces [], Volume: 9 Issue: 22 Pages: 2200915
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 14 Issue: 31 Pages: 36287-36287
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
Applied Surface Science [North-Holland], Volume: 579 Pages: 152136
Materials [Multidisciplinary Digital Publishing Institute], Volume: 15 Issue: 3 Pages: 830
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182
ACS Applied Electronic Materials [American Chemical Society],
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3316
Applied Physics Letters [AIP Publishing LLC], Volume: 119 Issue: 9 Pages: 093103
arXiv preprint arXiv:2108.09542 [],
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 13 Issue: 26 Pages: 31248-31259
AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 12 Pages: 125017
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
Carbon [Pergamon], Volume: 169 Pages: 172-181
Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705
Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications
Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 397-438
Applied Surface Science [North-Holland], Pages: 146656
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 38 Issue: 3 Pages: 032410
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide (SiC) based devices
arXiv preprint arXiv:2004.10988 [],
Journal of Crystal Growth [North-Holland], Pages: 125624
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 3 Pages: 528
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393
Comparison between Single Al2O3 or HfO2 Single Dielectric Layers and their Nanolaminated Systems
Advanced Materials Letters [International Association of Advanced Materials], Volume: 11 Issue: 1 Pages: 1-5
High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354
Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen
Carbon [Pergamon], Volume: 149 Pages: 546-555
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39
Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097
Nanotechnology [IOP Publishing], Volume: 30 Issue: 28 Pages: 284003
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157
Carbon Dots Dispersed on Graphene/SiO2/Si: A Morphological Study
physica status solidi (a) [], Volume: 216 Issue: 3 Pages: 1800559
Graphene‐SiO2 Interaction from Composites to Doping
physica status solidi (a) [], Volume: 216 Issue: 3 Pages: 1800540
ADVANCED MATERIALS INTERFACES [Wiley-VCH Verlag GmbH & Co. KGaA.], Pages: 1-11
Photoinduced charge transfer from Carbon Dots to Graphene in solid composite
Thin Solid Films [Elsevier], Volume: 669 Pages: 620-624
physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393
Photoinduced charge transfer from Carbon Dots to Graphene in solid composite
Thin Solid Films [Elsevier],
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008
physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653
Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307
Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere
Carbon [Pergamon], Volume: 127 Pages: 270-279
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771
Advances in the fabrication of graphene transistors on flexible substrates
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
AIP Advances [AIP Publishing LLC], Volume: 6 Issue: 7 Pages: 075021
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
ChemistryOpen [Wiley-Blackwell], Volume: 4 Issue: 4 Pages: 523
A practical MOCVD approach to the growth of Pr1–xCaxMnO3 films on single crystal substrates
physica status solidi (a) [], Volume: 212 Issue: 7 Pages: 1550-1555
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984
ChemistryOpen [Wiley-Blackwell], Volume: 4 Issue: 4
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 400-405
Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 685-688
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1137-1140
Thermal and plasma-enhanced atomic layer deposition of hafnium oxide on semiconductor substrates
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 112-115
GraphITA [Springer, Cham], Pages: 125-136