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RESEARCH INTERESTS
My interests span the development of materials, structures, electronic devices, and circuits for memory applications and new computing paradigms, like brain-inspired and neuromorphic computing in general.
In the last years, my research was targeted toward the exploitation of material and device properties to develop computational functionalities for the electronic emulation of biological synapses, neurons and overall brain activity and demonstrate their potential in computational platforms by system-level simulation.
One basic function of brain operation is the reconfiguration of the connections between neurons through plastic and tunable synapses. In this respect, we demonstrated that the conductance of memristor devices (or resistive memory devices) can be tuned in analogue manner thanks to a specific engineering of the interfaces of the metal/interface/metal structure of the devices themselves. Such engineered devices was used to modulate the communication between two artificial CMOS spiking neurons realized in 350 nm technology. The experimental device features have been validated in spiking neuronal network with various learning rules through system level simulations. (ref. project RAMP and NEURAM3)
On the otherside, the great potential of the brain comes form the employment of dynamical processes, usually modeled in diverse and heterogeneous functionalities like synaptic and neuron integration, firing adaptation, dendrite communication,... Volatile memristors are dynamical devices that can switch from a high to a low resistance state upon voltage application and relax back to the pristine state after voltage release. We demonstrate useful integrative functionalities of the devices useful to emulate biological processes. (ref. project MeM-Scales)
A completely different perspective towards neuromorphic computing is the idea of emulate some network-level feature of the brain rather than building a large network of artificial neurons and synapses. In particular, it is known that the brain based its efficiency in a so-call "edge-of-chaos" dynamical conditions. At the edge between ordered and chaotic behaviour the processing ability of a dynamical system are maximized. In this perspective, we developed and build a nonlinear dynamical circuits that uses the nonlinearity of a memristor device to manipulate the chaotic dynamics of voltage outputs and foresee to use it for computing purposes.(ref. project COSMO)
HIGHLIGHTS
Chua’s Circuit With Tunable Nonlinearity Based on a Nonvolatile Memristor: Design and Realization
Manuel Escudero; Sabina Spiga; Mauro Di Marco; Mauro Forti; Giacomo Innocenti; Alberto Tesi; Fernando Corinto; Stefano Brivio
https://ieeexplore.ieee.org/document/10289707
Physical Implementation of a Tunable Memristor-based Chua's Circuit
Manuel Escudero; Sabina Spiga; Mauro Di Marco; Mauro Forti; Giacomo Innocenti; Alberto Tesi; Fernando Corinto; Stefano Brivio
HfO2-based resistive switching memory devices for neuromorphic computing
S Brivio; S Spiga and D Ielmini
https://iopscience.iop.org/article/10.1088/2634-4386/ac9012/meta
ONGOING PROJECTS
Analogue Computing with Dynamic Switching Memristor Oscillators: Theory, Devices and Applications - COSMO
Website: here
Funding: PRIN2017
Reference person for CNR-IMM: Stefano Brivio
Memory technologies with multi-scale time constants for neuromorphic architectures - MeM-Scales
Website: https://memscales.eu/
Funding: H2020 - ICT
Reference person for CNR-IMM: Sabina Spiga
Scientific Productions
Applied Mathematical Modelling [Elsevier],
Frontiers in Neuroscience [Frontiers], Volume: 17 Pages: 1270090
Advanced Electronic Materials [], Pages: 2400221
Chua’s circuit with tunable nonlinearity based on a nonvolatile memristor: Design and realization
IEEE Transactions on Circuits and Systems I: Regular Papers [IEEE],
Physics-based compact modelling of the analog dynamics of HfOx resistive memories
Neuromorphic Computing and Engineering [IOP Publishing],
ACS Applied Materials & Interfaces [American Chemical Society],
arXiv preprint arXiv:2202.05094 [],
Frontiers in neuroscience [Frontiers], Volume: 15 Pages: 27
Fabrication of ordered Sb-Te and In-Ge-Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-9
Synaptic and neuromorphic functions: general discussion
Faraday discussions [The Royal Society of Chemistry], Volume: 213 Pages: 553-578
Valence change ReRAMs (VCM)-Experiments and modelling: general discussion
Faraday discussions [The Royal Society of Chemistry], Volume: 213 Pages: 259-286
Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion
Faraday discussions [The Royal Society of Chemistry], Volume: 213 Pages: 115-150
Faraday Discuss [], Volume: 213 Pages: 595-597
Nanotechnology [IOP Publishing], Volume: 30 Issue: 1 Pages: 015102
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 51 Issue: 34 Pages: 344003
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing
Scientific reports [Nature Publishing Group], Volume: 8 Issue: 1 Pages: 1-12
Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion
Faraday Discussions [Royal Society of Chemistry],
Synaptic and neuromorphic functions: general discussion
Faraday Discussions [Royal Society of Chemistry],
Stochastic circuit breaker network model for bipolar resistance switching memories
Journal of Computational Electronics [Springer US], Volume: 16 Issue: 4 Pages: 1154-1166
Journal of Electroceramics [Springer US], Volume: 39 Issue: 1-4 Pages: 21-38
Role of Al doping in the filament disruption in HfO 2 resistance switches.
Nanotechnology [IOP Publishing], Volume: 28 Issue: 39 Pages: 395202
Analog HfO2-RRAM Switches for Neural Networks
ECS Transactions [IOP Publishing], Volume: 75 Issue: 32 Pages: 85
(Invited) Analog HfO2-RRAM Switches for Neural Networks
ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 32 Pages: 85-94
Analog memristive synapse in spiking networks implementing unsupervised learning
Frontiers in neuroscience [Frontiers], Volume: 10 Pages: 482
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 13 Pages: 133504
PROCEEDINGS-IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS
Ultrasound [], Volume: 21 Pages: 24
Synaptic potentiation and depression in Al: HfO 2-based memristor
Microelectronic Engineering [Elsevier], Volume: 147 Pages: 41-44
Effect of Al doping on the retention behavior of HfO 2 resistive switching memories
Microelectronic Engineering [Elsevier], Volume: 147 Pages: 104-107
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices
Applied Physics Letters [AIP Publishing LLC], Volume: 107 Issue: 2 Pages: 023504
Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly
ACS nano [American Chemical Society], Volume: 9 Issue: 3 Pages: 2518-2529
Formation and disruption of conductive filaments in a HfO {sub 2}/TiN structure
Nanotechnology (Print) [], Volume: 25
Formation and disruption of conductive filaments in a HfO2/TiN structure
Nanotechnology [IOP Publishing], Volume: 25 Issue: 38 Pages: 385705
Formation and disruption of conductive filaments in a Hf [O. sub. 2]/TiN structure
Nanotechnology [], Volume: 25 Issue: 38
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153506
Engineered fabrication of ordered arrays of Au–NiO–Au nanowires
Nanotechnology [IOP Publishing], Volume: 24 Issue: 4 Pages: 045302
Low-power resistive switching in Au/NiO/Au nanowire arrays
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 22 Pages: 223510
Effect of Au proximity on the LSMO surface: An ab initio study
Journal of magnetism and magnetic materials [North-Holland], Volume: 324 Issue: 17 Pages: 2659-2663
Nanosession: Valence Change Memories‐A Look Inside
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 233-245
Physics of Plasmas [AIP], Volume: 19 Issue: 6 Pages: 064701
Electrodeposition of Arrays of Au/NiO/Au Nanowire Heterostructures for ReRAM Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 45 Pages: 3294
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 20 Pages: 206101
Correlation between growth dynamics and dielectric properties of epitaxial BaTiO3 films
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 10 Pages: 102904
Additional information on Appl. Phys. Lett.
APPLIED PHYSICS LETTERS [], Volume: 101 Pages: 223510
Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 5 Pages: 053511
Electrodeposition of Metal-Oxide-Metal Nanowire Heterostructures for ReRAM Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 35 Pages: 2226
Epitaxial growth of Fe/BaTiO3 heterostructures
Thin Solid Films [Elsevier], Volume: 519 Issue: 17 Pages: 5804-5807
Journal of materials science [Springer US], Volume: 46 Issue: 12 Pages: 4157-4161
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 21 Pages: 211907
Sharp Fe/MgO/Ge (001) epitaxial heterostructures for tunneling junctions
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 8 Pages: 084909
Applied physics letters [American Institute of Physics], Volume: 98 Issue: 9 Pages: 092505
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 11 Pages: 113906
On‐Chip Manipulation of Protein‐Coated Magnetic Beads via Domain‐Wall Conduits
Advanced materials [WILEY‐VCH Verlag], Volume: 22 Issue: 24 Pages: 2706-2710
Physical Review B [American Physical Society], Volume: 81 Issue: 9 Pages: 094410
Physical Review B [Oak Ridge National Lab.(ORNL), Oak Ridge, TN (United States)], Volume: 81 Issue: 9
Physical Review B [American Physical Society], Volume: 80 Issue: 10 Pages: 104437
On-chip nano-manipulation of magnetic particles via domain walls conduits
arXiv preprint arXiv:0903.3542 [],
On-chip manipulation of magnetic nanoparticles through domain walls conduits
arXiv preprint arXiv:0903.3516 [],
On-chip micro-droplet dispenser with disposable structure
The 13th International Conference on Miniaturized Systems for Chemistry and Life Sciences [], Pages: 1778-1780
Microscopy and Microanalysis [Cambridge University Press], Volume: 14 Issue: S2 Pages: 1392
Microscopy and Microanalysis [Cambridge University Press], Volume: 14 Issue: S2 Pages: 1392-1393
arXiv preprint arXiv:0805.1813 [],
X-ray photoemission study of the Au∕ La 0.67 Sr 0.33 Mn O 3 interface formation
Journal of Applied Physics [American Institute of Physics], Volume: 103 Issue: 4 Pages: 044903
X-ray photoemission study of the Au
Journal of applied physics [American Institute of Physics], Volume: 103 Issue: 4
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology [], Volume: 144
Decrease of the Curie temperature in La0. 67Sr0. 33MnO3 thin films induced by Au capping
Materials Science and Engineering: B [Elsevier], Volume: 144 Issue: 1-3 Pages: 93-96
Decrease of the Curie temperature in La 0.67 Sr 0.33 MnO 3 thin films induced by Au capping
Materials Science and Engineering: B [Elsevier], Volume: 144 Issue: 1 Pages: 93-96
Proximity effects induced by a gold layer on La 0.67 Sr 0.33 Mn O 3 thin films
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 10 Pages: 102506
Physical Review B [American Physical Society], Volume: 75 Issue: 9 Pages: 094418
Noise induced oscillations in a second order circuit with nonvolatile memristor
2023 International Conference on Noise and Fluctuations (ICNF) [IEEE], Pages: 1-4
Physical Implementation of a Tunable Memristor-based Chua's Circuit
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC) [IEEE], Pages: 117-120
Flux-charge characterizing of reset transition in bipolar resistive-switching memristive devices
Proc. 11th Spanish Conf. Electron Devices [],
HfO2-based memristors for neuromorphic applications
2016 IEEE International Symposium on Circuits and Systems (ISCAS) [IEEE], Pages: 393-396
Gradual set dynamics in HfO 2-based memristor driven by sub-threshold voltage pulses
2015 International Conference on Memristive Systems (MEMRISYS) [IEEE], Pages: 1-2
Manipulation at the nano-scale of single magnetic particles via domain walls conduits
2009 International Conference on Electromagnetics in Advanced Applications [IEEE], Pages: 837-840
On-chip manipulation of single magnetic nano-particles via domain walls conduits
2009 9th IEEE Conference on Nanotechnology (IEEE-NANO) [IEEE], Pages: 485-486
Molecular simulations of micellar carriers in presence of high intense electric fields
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on [IEEE], Pages: 787-789
Chemical and Biological Microsystems Society [],
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 [],
13th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2009 [Chemical and Biological Microsystems Society],
Neuromorphic applications using MOx-based memristors
Metal Oxides for Non-Volatile Memory [Elsevier], Pages: 465-508
Memristive Devices for Brain-Inspired Computing [Woodhead Publishing], Pages: 17-61
Electrical AFM for the Analysis of Resistive Switching
Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 205-229