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Francesco La Via was born in Catania, Italy, in September 1961. He received the M.S. degree in physics from Catania University, Catania, Italy, in 1985. From 1985 to 1990, he had a fellowship at STM, Catania. In 1990, he joined the CNR IMM in Catania as a researcher. During this time, he was a Visiting Scientist at Philips NatLab, Eindhoven, The Netherlands. In 2001 he became senior researcher of the CNR IMM and he is responsible of the research group that work on the new metallization schemes for silicon and silicon carbide. From 2003 he is responsible of the division of CNR-IMM that developed new processes for silicon carbide epitaxy and hetero-epitaxy. From 2020 he become Research Director. He is responsible of several industrial research projects and coordinator of two European projects: CHALLENGE (http://h2020challenge.eu/) and SiC Nano for picoGeo (http://picogeo.eu/). In this period he has published more than 350 papers on JCR journals and 4 edited books. He has presented several invited contributions to international conferences and has organized several conferences and tutorials. He has 6 patents on SiC technology and growth. The main research interests are in the field of silicon carbide growth, power devices, detectors and MEMS.
Scientific Productions
GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 362 Pages: 27-31
Stress Fields Distribution and Simulation in 3C-SiC (111) Resonators
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 703-705
Heavy Ions Radiation Damage on Silicon and Silicon Carbide Detectors
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 29-30
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 361 Pages: 27-32
Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 137-143
Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 1-6
TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 7-11
Stress Fields Distribution and Simulation in 3C-SiC Resonators
Key Engineering Materials [Trans Tech Publications Ltd], Volume: 984 Pages: 41-45
Key Engineering Materials [Trans Tech Publications Ltd], Volume: 984 Pages: 29-33
Key Engineering Materials [Trans Tech Publications Ltd], Volume: 984 Pages: 35-40
Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures
Fusion Engineering and Design [North-Holland], Volume: 204 Pages: 114486
Materials Science in Semiconductor Processing [Pergamon], Volume: 174 Pages: 108175
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000
Proceedings [MDPI], Volume: 97 Issue: 1 Pages: 44
Advanced approach of bulk (111) 3C-SiC epitaxial growth
Microelectronic Engineering [Elsevier], Volume: 283 Pages: 112116
Partially depleted operation of 250 μm-thick silicon carbide neutron detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 1058 Pages: 168918
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
Applied Physics Letters [AIP Publishing], Volume: 123 Issue: 7
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors
Sensors [MDPI], Volume: 23 Issue: 14 Pages: 6522
Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements
Defect and Diffusion Forum [Trans Tech Publications Ltd], Volume: 426 Pages: 65-69
Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1089 Pages: 57-61
Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy
Materials [MDPI], Volume: 16 Issue: 10 Pages: 3824
Laser crystallization of amorphous TiO2 on polymer
Materials Science in Semiconductor Processing [Pergamon], Volume: 157 Pages: 107328
Performance of a thick 250 μm silicon carbide detector: stability and energy resolution
Journal of Instrumentation [IOP Publishing], Volume: 18 Issue: 03 Pages: C03007
Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC
Crystal Research and Technology [], Pages: 2300034
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
Applied Surface Science [North-Holland], Volume: 606 Pages: 154896
Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 24 Pages: 245701
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
MRS Advances [Springer International Publishing], Pages: 1-6
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
Crystals [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 12 Pages: 1701
Micromachines [MDPI], Volume: 13 Issue: 7 Pages: 1042
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC
Crystal Growth & Design [American Chemical Society], Volume: 22 Issue: 8 Pages: 4996-5003
Physical Chemistry Chemical Physics [Royal Society of Chemistry], Volume: 24 Issue: 39 Pages: 24487-24494
Advanced Materials Proceedings [International Association of Advanced Materials], Volume: 2 Issue: 12 Pages: 774-778
Status of 3C-SiC Growth and Device Technology
Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications [John Wiley & Sons],
Micromachines [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 9 Pages: 1072
Acta Materialia [Pergamon], Volume: 213 Pages: 116915
Technology & Innovation [National Academy of Inventors], Volume: 22 Issue: 1 Pages: 105-118
A study on free-standing 3C-SiC bipolar power diodes
Applied Physics Letters [AIP Publishing], Volume: 118 Issue: 24
Crystal Growth & Design [American Chemical Society],
Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars
Materials & Design [Elsevier], Pages: 109833
Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications
Semiconductor Science and Technology [IOP Publishing],
Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface
Micromachines [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 126
Detector Response to DD Neutrons and Stability Measurements with 4H Silicon Carbide Detectors
Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 3 Pages: 568
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications
Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 4 Pages: 976
Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 16 Pages: 4400
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 983 Pages: 164578
Stacking Faults in 3C-SiC: From the Crystal Structure, to the Electrical Behavior
ECS Meeting Abstracts [IOP Publishing], Issue: 24 Pages: 1762
The NUMEN Heavy Ion Multidetector for a Complementary Approach to the Neutrinoless Double Beta Decay
Universe [Multidisciplinary Digital Publishing Institute], Volume: 6 Issue: 9 Pages: 129
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402
Silicon Carbide devices for radiation detection and measurements
Journal of Physics: Conference Series [IOP Publishing], Volume: 1561 Issue: 1 Pages: 012013
Applied Surface Science [North-Holland], Pages: 146656
Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC
Crystal Growth & Design [American Chemical Society], Volume: 20 Issue: 5 Pages: 3104-3111
Generation and termination of stacking faults by Inverted Domain Boundary in 3C-SiC
Crystal Growth & Design [American Chemical Society],
Ni/4h-sic interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Volume: 9 Pages: 100528
Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171
NURE: An ERC project to study nuclear reactions for neutrinoless double beta decay
arXiv preprint arXiv:2002.02761 [],
Measuring nuclear reaction cross sections to extract information on neutrinoless double beta decay
arXiv preprint arXiv:2001.09648 [],
NURE: An ERC project to study nuclear reactions for neutrinoless double beta decay
arXiv preprint arXiv:2002.02761 [],
Materials [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 8 Pages: 1837
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 946 Pages: 162637
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Pages: 100528
Preface: Workshop on Calculation of Double-Beta-Decay Matrix Elements (MEDEX’19)
AIP Conference Proceedings [AIP Publishing LLC], Volume: 2165 Issue: 1 Pages: 010001
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers.
Materials (Basel, Switzerland) [], Volume: 12 Issue: 20
Biocompatibility between Silicon or Silicon Carbide surface and Neural Stem Cells
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-13
3C-SiC grown on Si by using a Si1-xGex buffer layer
Journal of Crystal Growth [North-Holland], Volume: 519 Pages: 1-6
Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide
Micromachines [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 7 Pages: 430
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
physica status solidi (a) [], Volume: 216 Issue: 10 Pages: 1800597
Nuclear fragment identification with ΔE-E telescopes exploiting silicon carbide detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 925 Pages: 60-69
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298
Journal of Crystal Growth [North-Holland], Volume: 507 Pages: 70-76
Challenges in double charge exchange measurements for neutrino physics
CERN Proc. [CERN], Volume: 1 Pages: 233-238
Silicon carbide for future intense luminosity nuclear physics investigations
Il nuovo cimento C [Societa italiana di fisica], Volume: 42 Issue: 2-3 Pages: 1-4
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 15 Pages: 2353
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 13 Pages: 2179
Growth and Coalescence of 3C-SiC on Si (111) Micro-Pillars by a Phase-Field Approach
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 19 Pages: 3223
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3293
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3362
3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3407
Journal of Crystal Growth [North-Holland],
Protrusions reduction in 3C-SiC thin film on Si
Journal of Crystal Growth [North-Holland], Volume: 498 Pages: 248-257
SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications.
Sensors [Multidisciplinary Digital Publishing Institute], Volume: 18 Issue: 7 Pages: 2289
Silicon Carbide detectors for nuclear physics experiments at high beam luminosity
J. Phys.: Conf. Ser. [], Volume: 1056 Issue: 1 Pages: 012032
Solving the critical thermal bowing in 3C-SiC/Si (111) by a tilting Si pillar architecture
Journal of Applied Physics [AIP Publishing LLC], Volume: 123 Issue: 18 Pages: 185703
Measuring nuclear reaction cross sections to extract information on neutrinoless double beta decay
Journal of Physics: Conference Series [IOP Publishing], Volume: 966 Issue: 1 Pages: 012021
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
physica status solidi (a) [], Pages: 1800597
Materials Science Forum [], Volume: 924 Pages: 913
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers
Journal of Crystal Growth [North-Holland], Volume: 478 Pages: 159-162
Materials Science and Engineering: B [Elsevier], Volume: 225 Pages: 128-133
The NUMEN project@ LNS: Status and perspectives
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1894 Issue: 1 Pages: 020004
Evaluation of defects in 3C-SiC grown by Sublimation Epitaxy using 3C-SiC-on-Si seeding layers
The 5th International Workshop on LEDs and Solar Applications [], Pages: 6
Carbonization and transition layer effects on 3C-SiC film residual stress
Journal of Crystal Growth [North-Holland], Volume: 473 Pages: 11-19
Growing bulk‐like 3C‐SiC from seeding material produced by CVD
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600429
Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 8 Pages: 4304-4311
Applied Physics Express [IOP Publishing], Volume: 10 Issue: 3 Pages: 036601
Structural and electronic transitions in G e 2 S b 2 T e 5 induced by ion irradiation damage
Physical Review B [American Physical Society], Volume: 94 Issue: 9 Pages: 094103
The nuclear matrix elements of 0vββ decay and the NUMEN project at INFN-LNS
J Phys Conf. Series [], Volume: 730 Pages: 012006
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 28-31
High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy
MRS Advances [Materials Research Society], Volume: 1 Issue: 54 Pages: 3643-3647
Silicon carbide detectors study for NUMEN project
EPJ Web of Conferences [EDP Sciences], Volume: 117 Pages: 10006
Optimization of Ion Implantation processes for 4H-SiC DIMOSFET
MRS Advances, available on CJO2016. doi [], Volume: 10 Pages: 1557
Materials Science and Engineering: B [Elsevier], Volume: 198 Pages: 14-19
Laser plasma monitored by silicon carbide detectors
Radiation Effects and Defects in Solids [Taylor & Francis], Volume: 170 Issue: 4 Pages: 303-324
Strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane
Dim [], Volume: 8 Pages: x104
Biomedical engineering online [BioMed Central], Volume: 13 Issue: 1 Pages: 1-10
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1606-1610
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults
Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 16 Pages: 163506
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults
Journal of Applied Physics [], Volume: 116 Issue: 16
Three-Dimensional Epitaxial Si1-XGex, Ge and SiC Crystals on Deeply Patterned Si Substrates
ECS Transactions [IOP Publishing], Volume: 64 Issue: 6 Pages: 631
ECS Transactions [The Electrochemical Society], Volume: 64 Issue: 6 Pages: 631-648
Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si 1-x Ge x/Si (001) heterostructures.
Materials Science Forum [], Volume: 806
IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 8 Pages: 2879-2885
MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors
Journal of Physics: Conference Series [IOP Publishing], Volume: 508 Issue: 1 Pages: 012009
4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6.
Materials Science Forum [],
Materials Research Express [IOP Publishing], Volume: 1 Issue: 1 Pages: 015912
Evaluation of 3C-SiC/Si residual stress and curvatures along different wafer direction
Materials Letters [North-Holland], Volume: 118 Pages: 130-133
MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors
JOURNAL OF PHYSICS. CONFERENCE SERIES [], Volume: 508 Issue: 012009 Pages: 1-6
A new position sensitive anode for plasmas diagnostic
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 720 Pages: 122-124
Introduction to Silicon Carbide—Materials, Processing and Devices–ADDENDUM
Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 5 Pages: 786-786
Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures
Journal of Raman Spectroscopy [], Volume: 44 Issue: 2 Pages: 299-306
Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 129
Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 104
High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas
Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 87
Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 94
Editorial for E-MRS Symposium Q
Science [], Volume: 523 Pages: 1-80
Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy
Thin Solid Films [Elsevier], Volume: 522 Pages: 20-22
Thin Solid Films [Elsevier], Volume: 522 Pages: 26-29
Large area optical characterization of 3 and 4 inches 4H–SiC wafers
Thin solid films [Elsevier], Volume: 522 Pages: 30-32
Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes
Surface science [North-Holland], Volume: 606 Issue: 15-16 Pages: 1263-1267
arXiv preprint arXiv:1206.6600 [],
Physical Review B [American Physical Society], Volume: 85 Issue: 23 Pages: 235310
Crystal recovery from Al‐implantation induced damaging in 3C‐SiC films
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 6 Issue: 5 Pages: 226-228
Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS Application
Electrochemical and Solid State Letters [IOP Publishing], Volume: 15 Issue: 6 Pages: H182
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 1005-1008
Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1433
SiC films and coatings: Amorphous polycrystalline and single crystal forms
Silicon Carbide Biotechnology [], Pages: 17-61
Research Signpost [],
Surface science [North-Holland], Volume: 605 Issue: 21-22 Pages: L67-L69
arXiv preprint arXiv:1110.4727 [],
High quality 3C-SiC for MOS applications
ECS Transactions [IOP Publishing], Volume: 41 Issue: 8 Pages: 273
(Invited) High Quality 3C-SiC for MOS Applications
ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 8 Pages: 273-282
High power density UV optical stress for quality evaluation of 4H-SiC epitaxial layers
Electrochemical and Solid State Letters [IOP Publishing], Volume: 14 Issue: 11 Pages: H457
Electrochemical and Solid-State Letters [The Electrochemical Society], Volume: 14 Issue: 7 Pages: S3-S3
3C-SiC film growth on Si substrates
ECS Transactions [IOP Publishing], Volume: 35 Issue: 6 Pages: 99
Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application
ECS Transactions [IOP Publishing], Volume: 35 Issue: 6 Pages: 123
Advanced residual stress analysis and FEM simulation on heteroepitaxial 3CSiC for MEMS application
Journal of microelectromechanical systems [IEEE], Volume: 20 Issue: 3 Pages: 745-752
Defect influence on heteroepitaxial 3C-SiC Young’s modulus
Electrochemical and Solid State Letters [IOP Publishing], Volume: 14 Issue: 4 Pages: H161
Applied physics express [IOP Publishing], Volume: 4 Issue: 2 Pages: 025802
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 5 Pages: 051915
Applied Physics Express [], Volume: 4 Issue: 2
Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus (vol 14, H161, 2011)
ELECTROCHEMICAL AND SOLID STATE LETTERS [ELECTROCHEMICAL SOC INC], Volume: 14 Issue: 7 Pages: S3-S3
AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 19-22
Microtwin reduction in 3C–SiC heteroepitaxy
Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 18 Pages: 181916
AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 99-102
Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates
Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 14 Pages: 142103
Stacking faults evolution during epitaxial growths: Role of surface the kinetics
Surface Science [North-Holland], Volume: 604 Issue: 11-12 Pages: 939-942
Journal of The Electrochemical Society [IOP Publishing], Volume: 157 Issue: 4 Pages: H438
Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC
Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S159-S161
Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246
High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates
Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S165-S169
Multiscale simulation for epitaxial silicon carbide growth by chlorides route
Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S6-S11
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246
Mater. Sci. Forum [], Volume: 64 Pages: 283
Single Shockley faults evolution under UV optical pumping
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246
J. Appl. Phys [], Volume: 13511 Issue: 10.1063/1.3457840 Pages: 108
Diamond and related materials [Elsevier], Volume: 18 Issue: 12 Pages: 1440-1449
Preferential oxidation of stacking faults in epitaxial off-axis (111) 3 C-SiC films
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 11 Pages: 111905
Monte Carlo study of the step flow to island nucleation transition for close packed structures
Surface Science [North-Holland], Volume: 603 Issue: 14 Pages: 2226-2229
Heteroepitaxy of 3 C-SiC on different on-axis oriented silicon substrates
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 8 Pages: 084910
Effect of the miscut direction in (111) 3 C-Si C film growth on off-axis (111) Si
Applied physics letters [American Institute of Physics], Volume: 94 Issue: 10 Pages: 101907
Low temperature reaction of point defects in ion irradiated 4H–SiC
Diamond and related materials [Elsevier], Volume: 18 Issue: 1 Pages: 39-42
4H-SiC epitaxial layer growth by trichlorosilane (TCS)
Journal of Crystal Growth [North-Holland], Volume: 311 Issue: 1 Pages: 107-113
Electrical properties of high energy ion irradiated 4 H-SiC Schottky diodes
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093711
Growth of 3C-SiC on Si: Influence of Process Pressure
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211
Heteroepitaxial growth of (111) 3 C-Si C on (110) Si substrate by second order twins
Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 22 Pages: 224102
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
Journal of crystal growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 135
Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 619
Journal of Computational Physics [Academic Press], Volume: 227 Issue: 2 Pages: 1075-1093
Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 4 Pages: 043523
Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 2 Pages: 023518
Point defect production efficiency in ion irradiated 4H–SiC
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 279-282
Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 063544
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 137-140
Very high growth rate epitaxy processes with chlorine addition.
Materials Science Forum [], Pages: 157-160
Heteroepitaxial growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) substrates
ECS Transactions [IOP Publishing], Volume: 3 Issue: 5 Pages: 287
4H SiC epitaxial growth with chlorine addition
Chemical vapor deposition [WILEY‐VCH Verlag], Volume: 12 Issue: 8‐9 Pages: 509-515
Then, some aspects concerning the formation of low resistance (10-10 Qcm”) ohmic
SiC Materials and Devices [World Scientific], Volume: 1 Pages: 77
Effects of implantation defects on the carrier concentration of 6H-SiC
Applied Physics A [Springer-Verlag], Volume: 82 Issue: 3 Pages: 543-547
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 199-202
Temperature dependence of the c-axis drift mobility in 4H–SiC
Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 45-47
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911
High growth rate process in a SiC horizontal CVD reactor using HCl
Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 163-166
International journal of high speed electronics and systems [World Scientific Publishing Company], Volume: 15 Issue: 04 Pages: 781-820
Drift mobility in 4H-SiC Schottky diodes
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 14 Pages: 142105
Journal of Applied Physics [American Institute of Physics], Volume: 98 Issue: 2 Pages: 023713
Ion irradiation of inhomogeneous Schottky barriers on silicon carbide
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 12 Pages: 123502
Effect of a Ti cap layer on the diffusion of Co atoms during CoSi2 reaction
Electrochemical and solid-state letters [The Electrochemical Society], Volume: 8 Issue: 2 Pages: G47-G50
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 429-432
Assessing innovative bulk (111) 3C-SiC epitaxial growth
2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) [IEEE], Pages: 1-5
Advanced strategies for high activation in ion implanted 4H-SiC by laser annealing
2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) [IEEE], Pages: 1-5
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 320-324
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 195-203
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 74-78
Effect of N and Al Doping on 3C-SiC Stacking Faults
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 64-68
Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 278-282
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 400-405
Automatic Image Analysis of Stackingfault
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 283-287
Review of Sublimation Growth of SiC Bulk Crystals
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 104-112
Neutron Detection Study through Simulations with Fluka
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 509-513
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 204-208
Impact of N Doping on 3C-SiC Defects
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 69-73
3C-SiC bulk growth: Effect of growth rate and doping on defects and stress
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 120-125
Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 113-119
4H-SiC MOSFET Source and Body Laser Annealing Process
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 705-711
Thermal Annealing of High Dose P Implantation in 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 399-402
Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 149-152
Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489
High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 346-349
Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 353-356
Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482
High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 91-96
Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 84-87
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 535-538
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 357-360
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 913-918
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 124-127
4H-SiC defects evolution by thermal processes
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 181-184
Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 303-306
3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers
Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 15-18
3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 15-18
4H-SiC defects evolution by thermal processes
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
3C-SiC Epitaxy on Deeply Patterned Si (111) Substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 151-154
Ion implantation defects in 4H-SiC DIMOSFET
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 418-421
Voids-free 3C-SiC/Si interface for high quality epitaxial layer
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 159-162
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 89-92
Stacking Fault Analysis of Epitaxial 3C-SiC on Si (001) Ridges
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 147-150
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 197-200
Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 380-383
4H-SiC Defects Analysis by Micro Raman Spectroscopy
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 335-338
Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si (001) heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 21-25
Epitaxial Growth on 150 mm 2° off Wafers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 157-160
3C-SiC Polycrystalline Films on Si for Photovoltaic Applications
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 189-192
4H-SiC Defects Analysis by Micro Raman Spectroscopy
Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 335-338
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 257-260
Defect Reduction in Epitaxial 3C-SiC on Si (001) and Si (111) by Deep Substrate Patterning
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 193-196
Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 11-14
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 773-776
Hetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure Sensor
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 902-905
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 457-460
Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 255-258
Micro-Raman Characterization of 4H-SiC Stacking Faults
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 378-381
4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 121-124
Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 95-98
Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 238-242
Effects of Al ion implantation on 3C-SiC crystal structure
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 613-616
Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 301-305
3C-SiC growth on (001) Si substrates by using a multilayer buffer
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 263-266
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 229-234
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 673-676
Fast growth rate epitaxy by chloride precursors
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 167-172
Micro-Raman analysis of a micromachined 3C-SiC cantilever
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 525-528
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 113-116
Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 521-524
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 149-152
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 55-60
Structural characterization of heteroepitaxial 3C-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 27-30
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 517-520
Consideration on the thermal expansion of 3C-SiC epitaxial layer on Si substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 31-34
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 51-54
Complete determination of the local stress field in epitaxial thin films using single microstructure
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 213-216
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 133-136
Reduction of the surface density of Single Shockley faults by TCS growth process
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 67-70
Raman stress characterization of hetero-epitaxial 3C-SiC free standing structures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 141-144
Evolution of extended defects during epitaxial growths: a Monte Carlo study
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 48-54
Raman study of bulk mobility in 3C-SiC heteroepitaxy
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 221-224
On the “step bunching” phenomena observed on etched and homoepitaxially grown 4H silicon carbide
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 358-361
Raman characterization of doped 3C-SiC/Si for different silicon substrates and C/Si ratios
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 255-258
Growth rate effect on 3C-SiC film residual stress on (100) Si substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 143-146
A study of structural defects in 3C-SiC hetero-epitaxial films
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 371-374
Bow in 6 inch high-quality off-axis (111) 3C-SiC films
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 167-170
Single Shockley faults enlargement during micro-photoluminescence defects mapping
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 555-558
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 283-286
Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 865-868
3C-SiC heteroepitaxial growth on inverted silicon pyramids (ISP)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 135-138
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 539-542
Thick epitaxial layers growth by chlorine addition
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 55-60
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 135-138
Compensation Effects in 7 MeV C Irradiated n-doped 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 619-622
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 127-130
Towards Large Area (111) 3C-SiC Films Grown on off-oriented (111) Si
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 149-152
Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 73-76
Defects in High Energy Ion Irradiated 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 397-400
Residual stress measurement on hetero-epitaxial 3C-SiC films
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 629-632
Growth of 3C-SiC on Si: influence of process pressure
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 211-214
Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 215-218
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 243-246
High quality single crystal 3C-SiC (111) films grown on Si (111)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 145-148
SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 123-126
3C-SiC Hetero-Epitaxial Films for Sensors Fabrication
Advances in Science and Technology [Trans Tech Publications Ltd], Volume: 54 Pages: 411-415
Optimisation of epitaxial layer growth with HCl addition by optical and electrical characterization
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 137-140
Film morphology and process conditions in epitaxial silicon carbide growth via chlorides route
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 93-96
Carbonization study of different silicon orientations
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 171-174
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 199-202
Epitaxial layers grown with HCl addition: a comparison with the standard process
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 163-166
SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 179-182
Silicon carbide: Defects and devices
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 108 Pages: 663-670
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 933-936
New achievements on CVD based methods for SiC epitaxial growth
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 67-72
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 429-432
Defect evolution in ion irradiated 6H-SiC epitaxial layers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 485-488
Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 729-732
Measuring Techniques for the Semiconductor’s Parameters
Springer Handbook of Semiconductor Devices [Springer International Publishing], Pages: 117-168
The development of a fully MRI-compatible silicon carbide neural interface
Silicon Carbide Technology for Advanced Human Healthcare Applications [Elsevier], Pages: 161-195
Proceedings of the European Conference on Silicon Carbide and Related Materials 2018 (ECSCRM2018) [],
Silicon Carbide and Related Materials 2015
[Trans Tech Publications Ltd],
Advanced silicon carbide devices and processing
[BoD–Books on Demand],
Impact of dielectric formation and processing techniques on the operation of 4H-SiC mosfets
Advanced Silicon Carbide Devices and Processing [IntechOpen],
Sensors [Springer, Cham], Pages: 9-12
SiC Materials and Devices: Volume 1 [World Scientific], Pages: 77-116