Taking part in fabrication of the resistive siwtching devices, electrical characterization, and understanding of the switching properties. He is also taking part in developing programs for carrying out electrical characterization.
Mrinmoy Dutta has joined the group led by Dr. Sabina Spiga in the H2020 MEMSCALES project in March, 2021. His current research area includes exploring the cation based memory devices for analogue computing. He has authored and co-authored articles in various journals such as Advanced Electronic Materials, Vacuum, Electronics, etc. and taken part in various conferences such as IMW, IWDTF, VLSI-TSA, etc.
Mrinmoy Dutta has carried out PhD research work on cation based memory devices in Chang Gung University, Taiwan. During PhD he was a recipient of the Ministry of Science and Technology, Taiwan project grant for carrying out research on resistive switching memory devices and their application. His thesis title was: Improvement of resistive switching memory using Cu filament based interfacial engineering in high-k/MoS2 electrolyte and its neuromorphic/bio-sensing application. He has pursued Master of Technology in Materials Sc. and Engineering from Jadavpur University with GATE scholarship awarded by Ministry of Human Resources and Development, Govt. of India. He has also pursued Masters of Science in Electronics from University of Calcutta.
His research activities are available in https://scholar.google.com/citations?user=U6R5hD0AAAAJ&hl=en.
His hobbies include numismatics, traveling, hiking, and planting.
MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) [IEEE], Pages: 143-144
Cu Filament Based Resistive Switching and Oxidation Reduction through Dopamine Sensing in Novel Cu/MoS2/TinN Structure
2018 IEEE International Memory Workshop (IMW) [IEEE], Pages: 1-4
Impact of AlOxinterfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs
2014 IEEE 6th International Memory Workshop (IMW) [IEEE], Pages: 1-4
Oxide-electrolyte thickness dependence diode-like threshold switching and high on/off ratio characteristics by using Al2O3 based CBRAM
Electronics [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 7 Pages: 1106
Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points
Vacuum [Elsevier], Volume: 176 Pages: 109326
Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM
Langmuir [American Chemical Society], Volume: 35 Issue: 11 Pages: 3897-3906
Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN
Advanced Electronic Materials [Wiley], Volume: 5 Issue: 2 Pages: 1800288
Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure
Applied Surface Science [North-Holland], Volume: 433 Pages: 51-59
Understanding of multi-level resistive switching mechanism in GeO x through redox reaction in H 2 O 2/sarcosine prostate cancer biomarker detection
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-12
Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications
Journal of The Electrochemical Society [IOP Publishing], Volume: 164 Issue: 4 Pages: B127
Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu: AlOx/TaOx/TiN structure
Journal of Alloys and Compounds [Elsevier], Volume: 637 Pages: 517-523
RRAM characteristics using a new Cr/GdOx/TiN structure
Nanoscale Research Letters [Springer], Volume: 9 Issue: 680 Pages: 1-9