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Scientific Productions
3× 1018-1× 1019 cm-3 Al+ ion implanted 4H-SiC: annealing time effect
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 683-688
Sensors [Multidisciplinary Digital Publishing Institute], Volume: 20 Issue: 1 Pages: 120
Microstructure and mechanical properties of shear-extruded Mg-Sn-Y-Zr alloys
Emerging Materials Research [Thomas Telford Ltd], Volume: 5 Issue: 1 Pages: 74-80
Identification and tackling of a parasitic surface compound in SiC and Si-rich carbide films
Materials Science and Engineering: B [Elsevier], Volume: 178 Issue: 9 Pages: 623-629
Micromachined gas calibration sources based on nanometric depth microchannels
Procedia Engineering [Elsevier], Volume: 5 Pages: 1344-1347
Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 699
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 639-642
GC-QEPAS: A Mems-Enabled Portable Trace Chemical Sensor for Safety & Security Applications
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) [IEEE], Pages: 1365-1368
Induced strain in silicon waveguides and couplers
Silicon Photonics X [International Society for Optics and Photonics], Volume: 9367 Pages: 93671L
Improving doping efficiency of P+ implanted ions in 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 393-396
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 699-702
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 687-690
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 639-642
Wafer-level measurement of thermal conductivity on thin films
SENSORS, 2006 IEEE [IEEE], Pages: 1239-1242
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O2 oxidation ambient
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 979-982
Wafer-level testing of thermopile IR detectors
SENSORS, 2005 IEEE [IEEE], Pages: 4 pp.
Transforming the Future of Infrastructure through Smarter Information: Proceedings of the International Conference on Smart Infrastructure and ConstructionConstruction, 27–29 June 2016 [ICE Publishing], Pages: 239-244
Transforming the Future of Infrastructure through Smarter Information: Proceedings of the International Conference on Smart Infrastructure and ConstructionConstruction, 27–29 June 2016 [ICE Publishing], Pages: 239-244
WAFER-LEVEL MEASUREMENT OF THIN FILMS THERMOELECTRIC POWER
Sensors And Microsystems [], Pages: 578-583