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Surname: 
Longo
Firstname: 
Massimo
Position: 
Staff
Profile: 
Researcher
Phone: 
+39 06 49934237
Activity: 

RF sputtering and MOCVD synthesis/electrical analysis of chalcogenide nanomaterials (1D and 2D). Main application area: non-volatile phase change memory (PCM). Seed activities: nanostructured chalcogenides for spintronics, topological insulators and thermoelectrical materials.

Curriculum: 

Massimo Longo received the Laurea degree in Physics in 1993. During his thesis work he acquired the know-how of the Metal Organic Vapour Phase Epitaxy process (MOVPE). In 1994 he had an INFM post-lauream grant, working on the “Study of MOVPE growth of II-VI semiconductor layers” (Lecce Research Unit). During 1994-97 he attended the PhD course in Physics. Research topic: growth optimization and study of the chemical-physical processes taking place during the MOVPE growth of II-VI/GaAs heterostructures. During 1998-99 he worked with an INFM Post-Doc fellowship at the Unit of Research in Lecce. Research topics: MOVPE growth of quantum confined epitaxial nanostructures, based on III-V compounds (GaAs, InGaAs and AlGaAs) for infra-red oparating devices and nitride compounds (GaN, AlGaN ed InGaN) for optoelectronic devices operating in the blue-UV. In 1999-2002 he had an INFM grant for the MOVPE growth of heterostrucures based on InP for micro- and optoelectronic applications; during such period he directed the installation of the MOVPE Laboratory of the University of Parma (Italy), operating since 2001. From 2002 to 2007 he was a researcher for INFM (subsequently CNR-INFM) at the Department of Physics of the University of Parma, being also responsible of the epitaxial growth activity. Main research topics: MOVPE growth of arsenide and phosphide compounds for high efficiency, multi quantum well solar cells, devoted to terrestrial applications and MOVPE growth of structures for the study of the effects of iron ion implantation for microelectronic applications. During 2002-2007 he also worked in teaching, orientation and organizing for the University of Parma. Since 2007 he is a researcher at the former National Laboratory MDM of Agrate Brianza (Milano), currently CNR-IMM, supervising the synthesis by Metalorganic Chemical vapour Deposition (MOCVD) and characterization of chalcogenides for nanoelectronics and thermoelectrics. After coordinating national and bilateral projects on materials and nanostructures for PCM, he has coordinated the European EU-FP7 Project SYNAPSE (http://cordis.europa.eu/project/rcn/106204_en.html). As for the joint activities of CNR-IMM with Micron ed STMicroelectronics, he has been acting since 2009 as the key-person for PCM memories, organizing the characterization of the involved materials through the analysis of the electrical transport (I-V, resisitvity), magnetic field (Hall effect) and thermal properties (3 Ω method). Since November 2018 he is key investigator within the EU H2020 FET PROACT project SKYTOP, in relation to the MOCVD Synthesis of topological insulator chalcogenide materials for spintronic applications Since January 2019 he is Workpackage leader for the materials development in the EU project H2020 ICT BeforeHand (2019-2021), devoted to the study of chalcogenide heterostructures for innovative phase change devices combining memory and computation capabilities.

Source: 
Rome UNIT

Scientific Productions

E Longo, L Locatelli, P Tsipas, A Lintzeris, A Dimoulas, M Fanciulli, M Longo, R Mantovan

Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion

arXiv preprint arXiv:2304.10841 [],

Roberto Mantovan, Lorenzo Locatelli, Polychronis Tsipas, Athanasios Dimoulas, Akylas Lintzeris, Emanuele Longo, Arun Kumar, Massimo Longo

Close-to-Dirac point shift of large-area MOCVD-grown Bi2Te3’s Fermi level following growth on Sb2Te3

Bulletin of the American Physical Society [American Physical Society],

Marco Bertelli, Adriano Díaz Fattorini, Sara De Simone, Sabrina Calvi, Riccardo Plebani, Valentina Mussi, Fabrizio Arciprete, Raffaella Calarco, Massimo Longo

Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide

Nanomaterials [MDPI], Volume: 12 Issue: 12 Pages: 2001

Arun Kumar, Seyed Ariana Mirshokraee, Alessio Lamperti, Matteo Cantoni, Massimo Longo, Claudia Wiemer

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

Nanomaterials [MDPI], Volume: 12 Issue: 10 Pages: 1623

Adriano Díaz Fattorini, Caroline Chèze, Iñaki López García, Christian Petrucci, Marco Bertelli, Flavia Righi Riva, Simone Prili, Stefania MS Privitera, Marzia Buscema, Antonella Sciuto, Salvatore Di Franco, Giuseppe D’Arrigo, Massimo Longo, Sara De Simone, Valentina Mussi, Ernesto Placidi, Marie-Claire Cyrille, Nguyet-Phuong Tran, Raffaella Calarco, Fabrizio Arciprete

Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

Nanomaterials [MDPI], Volume: 12 Issue: 8 Pages: 1340

Caroline Chèze, Flavia Righi Riva, Giulia Di Bella, Ernesto Placidi, Simone Prili, Marco Bertelli, Adriano Diaz Fattorini, Massimo Longo, Raffaella Calarco, Marco Bernasconi, Omar Abou El Kheir, Fabrizio Arciprete

Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys

Nanomaterials [MDPI], Volume: 12 Issue: 6 Pages: 1007

A Kumar, SA Mirshokraee, A Lamperti, M Cantoni, M Longo, C Wiemer

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires. Nanomaterials 2022, 12, 1623

Synthesis, Properties and Applications of Germanium Chalcogenides [s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affil-iations.], Pages: 135

Emanuele Longo, Matteo Belli, Mario Alia, Martino Rimoldi, Raimondo Cecchini, Massimo Longo, Claudia Wiemer, Lorenzo Locatelli, Polychronis Tsipas, Athanasios Dimoulas, Gianluca Gubbiotti, Marco Fanciulli, Roberto Mantovan

Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon

Advanced Functional Materials [], Volume: 32 Issue: 4 Pages: 2109361

Emanuele Longo, Lorenzo Locatelli, Matteo Belli, Mario Alia, Arun Kumar, Massimo Longo, Marco Fanciulli, Roberto Mantovan

Spin‐Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance

Advanced Materials Interfaces [], Volume: 8 Issue: 23 Pages: 2101244

Arun Kumar, Raimondo Cecchini, Claudia Wiemer, Valentina Mussi, Sara De Simone, Raffaella Calarco, Mario Scuderi, Giuseppe Nicotra, Massimo Longo

Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3358

Martino Rimoldi, Raimondo Cecchini, Claudia Wiemer, Emanuele Longo, Stefano Cecchi, Roberto Mantovan, Massimo Longo

Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films

Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 9 Pages: 5135-5144

Arun Kumar, Raimondo Cecchini, Lorenzo Locatelli, Claudia Wiemer, Christian Martella, Lucia Nasi, Laura Lazzarini, Roberto Mantovan, Massimo Longo

Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)

Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 7 Pages: 4023-4029

Arun Kumar, Raimondo Cecchini, Claudia Wiemer, Valentina Mussi, Sara De Simone, Raffaella Calarco, Mario Scuderi, Giuseppe Nicotra, Massimo Longo

MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires

Coatings [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 718

Massimo Longo RaimondoCecchini, Christian Martella, Claudia Wiemer, Alessio Lamperti, Alberto Debernardi, Lucia Nasi, Laura Lazzarini, Alessandro Molle

Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process

Applied Surface Science [], Volume: 535 Issue: 147729

R. Mantovan E. Longo, M. Belli, M. Alia, M. Rimoldi, R. Cecchini, M. Longo, C. Wiemer, L. Locatelli, P. Tsipas, A. Dimoulas, G. Gubbiotti, M. Fanciulli

Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

Advanced Functional Materials [Wiley-VCH], Pages: 2109361

Massimo Longo, Paolo Fantini, Pierre Noé

Phase-Change Memories: Materials Science, Technological Applications and Perspectives

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 44 Pages: 440201

R Cecchini, C Martella, A Lamperti, S Brivio, F Rossi, L Lazzarini, E Varesi, M Longo

Fabrication of ordered Sb-Te and In-Ge-Te nanostructures by selective MOCVD

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002

R Cecchini, S Selmo, C Wiemer, M Fanciulli, E Rotunno, L Lazzarini, M Rigato, D Pogany, A Lugstein, M Longo

In-doped Sb nanowires grown by MOCVD for high speed phase change memories.

Micro and Nano Engineering [Elsevier], Volume: 2 Pages: 117-121

E Longo, C Wiemer, R Cecchini, M Longo, A Lamperti, A Khanas, A Zenkevich, M Fanciulli, R Mantovan

Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface

Journal of Magnetism and Magnetic Materials [North-Holland],

Raimondo Cecchini, Roberto Mantovan, Claudia Wiemer, Lucia Nasi, Laura Lazzarini, Massimo Longo

Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD

physica status solidi (RRL)–Rapid Research Letters [WILEY? VCH Verlag Berlin GmbH], Pages: 1800155

Raimondo Cecchini, Simone Selmo, Claudia Wiemer, Enzo Rotunno, Laura Lazzarini, Marta De Luca, Ilaria Zardo, Massimo Longo

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Materials Research Letters [Taylor & Francis], Volume: 6 Issue: 1 Pages: 29-35

E Rotunno, M Longo, L Lazzarini

Ageing of GeTe nanowires

Microscopie [], Volume: 26 Issue: 2 Pages: 58-63

Judit G Lisoni, Damien Deleruyelle, Ludovic Goux, Massimo Longo, Dafine Ravelosona

Non-volatile memories: Materials, nanostructures and integration approaches

physica status solidi (a) [], Volume: 2 Issue: 213 Pages: 235-236

Abdelhak Saci, Jean-Luc Battaglia, Andrzej Kusiak, Roberto Fallica, Massimo Longo

Thermal conductivity measurement of a Sb2Te3 phase change nanowire

Applied Physics Letters [American Institute of Physics], Volume: 104 Issue: 26 Pages: 263103

Laura Lazzarini, Enzo Rotunno, Vincenzo Grillo, Massimo Longo

Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM

MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1512

Enzo Rotunno, Laura Lazzarini, Massimo Longo, Vincenzo Grillo

Crystal structure assessment of Ge–Sb–Te phase change nanowires

Nanoscale [Royal Society of Chemistry], Volume: 5 Issue: 4 Pages: 1557-1563

Roberto Jakomin, Antonella Parisini, Luciano Tarricone, Massimo Longo, Beatrice Fraboni, Salvatore Vantaggio

On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy

Thin solid films [Elsevier], Volume: 520 Issue: 21 Pages: 6619-6625

Philipp Leiprecht, Paul Kühler, Massimo Longo, Paul Leiderer, Carmen N Afonso, Jan Siegel

Exploiting optical near fields for phase change memories

Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 1 Pages: 013103

Jean-Luc Battaglia, Andrea Cappella, Vincent Schick, Andrzej Kusiak, Enrico Varesi, Andrea Gotti, Claudia Wiemer, Massimo Longo, Bruno Hay

Temperature-dependent thermal characterization of Ge {sub 2} Sb {sub 2} Te {sub 5} and related interfaces by the photothermal radiometry technique

Journal of Physics. Conference Series (Online) [], Volume: 214

M Longo, A Parisini, L Tarricone, S Vantaggio, C Bocchi, F Germini, L Lazzarini

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

Journal of crystal growth [North-Holland], Volume: 311 Issue: 18 Pages: 4293-4300

R Magnanini, L Tarricone, A Parisini, M Longo, E Gombia

Investigation of GaAs/InGaP superlattices for quantum well solar cells

Thin Solid Films [Elsevier], Volume: 516 Issue: 20 Pages: 6734-6738

Carlo Ghezzi, Renato Magnanini, Antonella Parisini, Luciano Tarricone, Enos Gombia, Massimo Longo

Determination of the valence band offset of MOVPE-grown In 0.48 Ga 0.52 P∕ Ga As multiple quantum wells by admittance spectroscopy

Physical Review B [American Physical Society], Volume: 77 Issue: 12 Pages: 125317

E Gombia, C Ghezzi, A Parisini, L Tarricone, M Longo

Admittance spectroscopy of GaAs/InGaP MQW structures

Materials Science and Engineering: B [Elsevier], Volume: 147 Issue: 2-3 Pages: 171-174

B Fraboni, T Cesca, A Gasparotto, G Mattei, F Boscherini, G Impellizzeri, F Priolo, R Jakomin, M Longo, L Tarricone

Electrical and structural characterization of Fe implanted GaInP

Physica B: Condensed Matter [North-Holland], Volume: 401 Pages: 278-281

Beatrice Fraboni, Erio Piana, Tiziana Cesca, Andrea Gasparotto, Massimo Longo, Roberto Jakomin, Luciano Tarricone

Deep levels controlling the electrical properties of Fe-implanted GaInP∕ GaAs

Applied physics letters [American Institute of Physics], Volume: 90 Issue: 18 Pages: 182106

T Cesca, A Verna, G Mattei, A Gasparotto, B Fraboni, G Impellizzeri, F Priolo, L Tarricone, M Longo

Electrical Activation Of Fe Impurities Introduced In III‐V Semiconductors By High Temperature Ion Implantation

AIP Conference Proceedings [American Institute of Physics], Volume: 893 Issue: 1 Pages: 241-242

T Cesca, A Gasparotto, G Mattei, B Fraboni, F Boscherini, M Longo, L Tarricone

Local structure of Fe incorporated in GaInP layers by high temperature ion implantation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 332-335

C Ghezzi, R Magnanini, A Parisini, M Longo

Nonlinear electric field effects in the magnetoresistance of n-type GaSb

Journal of applied physics [American Institute of Physics], Volume: 99 Issue: 12 Pages: 123709

T Cesca, A Gasparotto, A Verna, B Fraboni, G Impellizzeri, F Priolo, L Tarricone, M Longo

Incorporation of active Fe impurities in GaInP by high temperature ion implantation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 242 Issue: 1-2 Pages: 653-655

M Begotti, M Longo, R Magnanini, L Tarricone, E Gombia, R Mosca, M Lynch, K Barnham, M Mazzer, G Hill

Electrical and photoelectrical properties of a GaAs‐based p‐i‐n structure grown by MOVPE

Crystal Research and Technology: Journal of Experimental and Industrial Crystallography [WILEY‐VCH Verlag], Volume: 40 Issue: 10‐11 Pages: 1033-1038

M Begotti, C Ghezzi, M Longo, R Magnanini, A Parisini, L Tarricone, S Vantaggio

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

Crystal Research and Technology: Journal of Experimental and Industrial Crystallography [WILEY‐VCH Verlag], Volume: 40 Issue: 10‐11 Pages: 976-981

Massimo Longo

Advances in nanowire PCM

Advances in Non-Volatile Memory and Storage Technology [Woodhead Publishing], Pages: 443-518

G Salviati, F Rossi, N Armani, L Lazzarini, L Nasi, V Grillo, A Passaseo, R Cingolani, M Longo, O Martinez

Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN

Microscopy of Semiconducting Materials 2001 [CRC Press], Pages: 251-254

G Salviati, F Rossi, N Armani, L Lazzarini, L Nasi, V Grillo, A Passaseo, R Cingolani, M Longo, O Martinez

Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN

Microscopy of Semiconducting Materials 2001 [CRC Press], Pages: 251-254

M Longo

Nanowire phase change memory (PCM) technologies: properties and performance

Advances in Non-Volatile Memory and Storage Technology [Woodhead Publishing], Pages: 231-261

M Longo

Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques

Advances in Non-Volatile Memory and Storage Technology [Woodhead Publishing], Pages: 200-230

Y Nishi, R Bez, A Pirovano, R Shirota, R Micheloni, L Crippa, G Molas, L Masoero, V Della Marca, G Gay, B de Salvo, S Raoux, M Longo, K Kamiya, MY Yang, K Shiraishi, B Magyari-Köpe, G Bersuker, DC Gilmer, JR Jameson, M Van Buskirk, GM Huang, Y Ho, A Kiazadeh, HL Gomes, W Kwon, T Eshita, T Tamura, Y Arimoto, H Ohno, T Endoh, T Hanyu, Y Ando, S Ikeda

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Advances in Non-Volatile Memory and Storage Technology [], Pages: xi-xiii

R Magnanini, Luciano Tarricone, M Longo, E Gombia

GaAs/InGaP MQW’s for high efficiency solar cells

Prooc. of E-MRS 2007 Spring Meeting SEMICONDUCTOR ELECTRONICS PHOTONICS: SYMPOSIUM D [European Material Research Society], Pages: D-13-4-D-13-4

M Longo, R Magnanini, Antonella Parisini, L Tarricone, C Bocchi, F Germini, L Lazzarini, L Nasi

Structural and optical analysis of MOVPE-grown InGaP/GaAs superlattices

12th European Workshop on Metalorganic Vapour Phase Epitaxy EW-MOVPE XII, Bartislava June 3-6, 2007 [J. Novàk, IEE SAS, Bratislava], Pages: 239-242

T Cesca, A Gasparotto, G Mattei, A Verna, Beatrice Fraboni, F Priolo, M Longo, L Tarricone

High temperature Fe implantation of GaInP/GaAs: a PIXE and RBS channeling investigation.

Proccedings of the 17th International Conference on Ion Beam Analysis [ESP],

M Longo, S Cecchi, S Selmo, M Fanciulli, C Wiemer, J-L Battaglia, A Saci, A Kusiak

MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires

2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) [IEEE], Pages: 150-154

S Vangelista, E Cinquanta, C Martella, M Longo, A Lamperti, R Mantovan, M Alia, F BASSO BASSET, F PEZZOLI, A Molle

The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction

GraphITA 2015 [],

T Cesca, A Verna, A Gasparotto, B Fraboni, G Impellizzeri, F Priolo, L Tarricone, M Longo

High resistivity in GaInP/GaAs by high temperature Fe ion implantation

International Conference on Indium Phosphide and Related Materials, 2005 [IEEE], Pages: 653-656

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