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Surname: 
Parisini
Firstname: 
Andrea
Position: 
Staff
Profile: 
Senior Researcher
Phone: 
+39 051 6399149
Curriculum: 

Andrea Parisini is a senior researcher at the IMM Institute of the National Research Council (CNR) in Bologna. He graduated in Physics "cum laude" at the University of Bologna  and received his PhD in Material Science from the University of Grenoble in 1989. As an electron microscopist, his works have concerned various aspects of the structural characterization of semiconductors and carbon-related materials whereas, more recently, he has focused his activity on quantitative methods in Z-contrast scanning transmission electron microscopy.

Source: 

Scientific Productions

Roberto Balboni, Andrea Parisini, Stefano Frabboni, Vittorio Morandi, Marco Vittori Antisari

In memoriam of Dr. Aldo Armigliato

Microscopie [],

Andrea Parisini, Stefano Frabboni, Gian Carlo Gazzadi, Rodolfo Rosa, Aldo Armigliato

Comparison of Cliff–Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxyc...

Microscopy and Microanalysis [Cambridge University Press], Volume: 24 Issue: 3 Pages: 193-206

EMF Vieira, Johann Toudert, Anabela G Rolo, A Parisini, JP Leitão, MR Correia, N Franco, E Alves, Adil Chahboun, J Martín-Sánchez, Rosalía Serna, MJM Gomes

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers.

Nanotechnology [IOP Publishing], Volume: 28 Issue: 34 Pages: 345701

Andrea Parisini, Stefano Frabboni, Gian Carlo Gazzadi, Aldo Armigliato, Rodolfo Rosa

Thickness and orientation dependence of the average HAADF STEM normalized intensity: a comparison with Monte Carlo and Multislice simulations.

BOOK OF ABSTRACTS [], Pages: 167

Lei Jin, Gianluca Sirigu, Xin Tong, Andrea Camellini, Andrea Parisini, Giuseppe Nicotra, Corrado Spinella, Haiguang Zhao, Shuhui Sun, Vittorio Morandi, Margherita Zavelani-Rossi, Federico Rosei, Alberto Vomiero

Engineering interfacial structure in “Giant” PbS/CdS quantum dots for photoelectrochemical solar energy conversion

Nano Energy [Elsevier], Volume: 30 Pages: 531-541

Antonella Parisini, Andrea Parisini, Roberta Nipoti

Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 29 Issue: 3 Pages: 035703

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

(Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950° C Temperature for Post Implantation Annealing

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 12 Pages: 171-181

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950° C Temperature for Post Implantation Annealing

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 12 Pages: 171-181

Haiguang Zhao, Gianluca Sirigu, Andrea Parisini, Andrea Camellini, Giuseppe Nicotra, Federico Rosei, Vittorio Morandi, Margherita Zavelani-Rossi, Alberto Vomiero

Dual emission in asymmetric “giant” PbS/CdS/CdS core/shell/shell quantum dots

Nanoscale [Royal Society of Chemistry], Volume: 8 Issue: 7 Pages: 4217-4226

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC pn Junctions after 1950° C Post Implantation Annealing

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 5 Issue: 10 Pages: P621-P626

Nuno P Barradas, E Alves, EMF Vieira, A Parisini, O Conde, J Martín-Sánchez, Anabela G Rolo, A Chahboun, MJM Gomes

IBA study of SiGe/SiO 2 nanostructured multilayers

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 331 Pages: 89-92

PP Lottici, C Razzetti, G Antonioli, A Parisini

parameters 31, 82, 83, whose determination has been, reported on

EXAFS and Near Edge Structure III: Proceedings of an International Conference, Stanford, CA, July 16–20, 1984 [Springer Science & Business Media], Volume: 2 Pages: 355

M Baldini, E Gombia, A Parisini, C Ghezzi, M Gorni

Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures

Journal of Applied Physics [AIP], Volume: 114 Issue: 13 Pages: 133706

JPB Silva, KC Sekhar, SAS Rodrigues, M Pereira, A Parisini, E Alves, NP Barradas, MJM Gomes

On the formation of an interface amorphous layer in nanostructured ferroelectric Ba 0.8 Sr 0.2 TiO 3 thin films integrated on Pt–Si and its effect on the electrical properties

Applied Surface Science [North-Holland], Volume: 278 Pages: 136-141

EMF Vieira, Regis Diaz, Jeremie Grisolia, Andrea Parisini, Javier Martín-Sánchez, S Levichev, Anabela G Rolo, A Chahboun, MJM Gomes

Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 9 Pages: 095306

EMF Vieira, J Martín-Sánchez, Anabela G Rolo, Andrea Parisini, Maja Buljan, I Capan, Eduardo Alves, Nuno P Barradas, Olinda Conde, Sigrid Bernstorff, A Chahboun, S Levichev, MJM Gomes

Structural and electrical studies of ultrathin layers with Si0. 7Ge0. 3 nanocrystals confined in a SiGe/SiO2 superlattice

Journal of Applied Physics [AIP], Volume: 111 Issue: 10 Pages: 104323

John Mohanraj, Nicola Armaroli, Laura Maggini, Hassan Traboulsi, Andrea Parisini, Gianluca Accorsi, Davide Bonifazi

A Luminescent Host-Guest Hybrid of a Eu (III) Complex and MWCNTs

Meeting Abstracts [The Electrochemical Society], Issue: 40 Pages: 2409-2409

Laura Maggini, John Mohanraj, Hassan Traboulsi, Andrea Parisini, Gianluca Accorsi, Nicola Armaroli, Davide Bonifazi

A luminescent host–guest hybrid between a EuIII complex and MWCNTs

Chemistry–A European Journal [WILEY‐VCH Verlag], Volume: 17 Issue: 31 Pages: 8533-8537

E Hourdakis, AG Nassiopoulou, A Parisini, MA Reading, JA Van Den Berg, L Sygellou, S Ladas, P Petrik, A Nutsch, M Wolf, G Roeder

Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [AVS], Volume: 29 Issue: 2 Pages: 022201

I Mohacsi, P Petrik, M Fried, T Lohner, JA Van Den Berg, MA Reading, Damiano Giubertoni, Mario Barozzi, A Parisini

Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si

Thin Solid Films [Elsevier], Volume: 519 Issue: 9 Pages: 2847-2851

E Hourdakis, AG Nassiopoulou, A Parisini, MA Reading, JA van den Berg, L Sygellou, S Ladas, P Petrik, A Nutsch, M Wolf, G Roeder

Microelectronic & Nanoelectronic Devices-Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation 022201

Journal of Vacuum Science and Technology-Section B [], Volume: 29 Issue: 2

MA Reading, JA Van den Berg, PC Zalm, DG Armour, Paul Bailey, TCQ Noakes, A Parisini, T Conard, Stefan De Gendt

High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [AVS], Volume: 28 Issue: 1 Pages: C1C65-C1C70

Damiano Giubertoni, Giancarlo Pepponi, B Beckhoff, P Hoenicke, Salvatore Gennaro, Florian Meirer, D Ingerle, G Steinhauser, M Fried, P Petrik, A Parisini, MA Reading, C Streli, JA Van Den Berg, Massimo Bersani

Multi‐technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium

AIP Conference Proceedings [AIP], Volume: 1173 Issue: 1 Pages: 45-49

Emmanouel Hourdakis, M Theodoropoulou, Androula G Nassiopoulou, Andrea Parisini, Michael A Reading, Jaap Van den Berg, Thierry Conard, Stefan Degendt

Comparison of electrical measurements with structural analysis of thin high-k hafnium-based films

ECS Transactions [The Electrochemical Society], Volume: 25 Issue: 3 Pages: 363-372

Jaap Van den Berg, Michael A Reading, Andrea Parisini, Michael Kolbe, Burkhard Beckhoff, Spyros Ladas, Miklos Fried, Peter Petrik, Paul Bailey, Tim Noakes, Thierry Conard, Stefan De Gendt

High Depth Resolution Depth Profile Analysis of Ultra Thin High-κ Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPS

ECS Transactions [The Electrochemical Society], Volume: 25 Issue: 3 Pages: 349-361

Andrea Parisini, Vittorio Morandi, Jaap Van den Berg, Michael A Reading, Damiano Giubertoni, Paul Bailey, Tim Noakes

As Depth Profiling in Si Ultrashallow Junctions: Comparison of Three Different Experimental Determinations.

Meeting Abstracts [The Electrochemical Society], Issue: 22 Pages: 2007-2007

Miklos Fried, Peter Petrik, Jaap Van den Berg, Michael A Reading, Andrea Parisini

Characterization of Near-Surface Defects Caused by Ultralow Energy Ion Implantation

Meeting Abstracts [The Electrochemical Society], Issue: 22 Pages: 1996-1996

Andrea Parisini, Vittorio Morandi, Salvatore Mezzotero

Thickness Effects in Tilted Sample Annular Darkfield Scanning Transmission EM

Microscopy and Analysis-UK [], Issue: 132 Pages: 19

Riccardo Marega, Gianluca Accorsi, Moreno Meneghetti, Andrea Parisini, Maurizio Prato, Davide Bonifazi

Cap removal and shortening of double-walled and very-thin multi-walled carbon nanotubes under mild oxidative conditions

Carbon [Pergamon], Volume: 47 Issue: 3 Pages: 675-682

A Parisini, V Morandi, S Solmi, PG Merli, D Giubertoni, M Bersani, JA Van den Berg

Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy

Applied Physics Letters [AIP], Volume: 92 Issue: 26 Pages: 261907

S Milita, M De Santis, D Jones, A Parisini, V Palermo

Real time investigation of the growth of silicon carbide nanocrystals on Si (100) using synchrotron X-ray diffraction

Applied Surface Science [North-Holland], Volume: 254 Issue: 7 Pages: 2162-2167

Gianluca Accorsi, Nicola Armaroli, Andrea Parisini, Moreno Meneghetti, Riccardo Marega, Maurizio Prato, Davide Bonifazi

Wet adsorption of a luminescent EuIII complex on carbon nanotubes sidewalls

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 17 Issue: 15 Pages: 2975-2982

Aldo Armigliato, Roberto Balboni, Andrea Parisini

Structural and Analytical Characterization by Scanning Transmission Electron Microscopy of Silicon-based Nanostructures

ECS Transactions [The Electrochemical Society], Volume: 10 Issue: 1 Pages: 57-64

JJ Hamilton, KJ Kirkby, NEB Cowern, EJH Collart, M Bersani, D Giubertoni, S Gennaro, A Parisini

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Applied Physics Letters [AIP], Volume: 91 Issue: 9 Pages: 092122

Andrea Parisini, D Giubertoni, M Bersani, V Morandi, PG Merli, JA van den Berg

Si Ultra Shallow Junctions Dopant Profiling with ADF-STEM

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1026

JJ Hamilton, NEB Cowern, JA Sharp, KJ Kirkby, EJH Collart, B Colombeau, Massimo Bersani, Damiano Giubertoni, A Parisini

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕ Si O 2 interface

Applied physics letters [AIP], Volume: 89 Issue: 4 Pages: 042111

M Ferri, S Solmi, A Parisini, Massimo Bersani, Damiano Giubertoni, Mario Barozzi

Arsenic uphill diffusion during shallow junction formation

Journal of applied physics [AIP], Volume: 99 Issue: 11 Pages: 113508

V Palermo, A Parisini, D Jones

Silicon carbide nanocrystals growth on Si (100) and Si (111) from a chemisorbed methanol layer

Surface science [North-Holland], Volume: 600 Issue: 5 Pages: 1140-1146

Antonella Parisini, Andrea Parisini, Marco Gorni, Roberta Nipoti

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 283-286

Gianluca Sirigu, Andrea Camellini, Haiguang Zhao, Andrea Parisini, Frederico Rosei, Vittorio Morandi, Alberto Vomiero, Margherita Zavelani-Rossi

Ultrafast Exciton Dynamics in Doubly Emitting Asymmetric Giant PbS/CdS/CdS Nanocrystals

The European Conference on Lasers and Electro-Optics [Optical Society of America], Pages: CE_5a_1

Damiano Giubertoni, Maria Secchi, S Gupta, JL Colaux, Florian Meirer, Evgeny Demenev, R Gwilliam, C Jeynes, A Parisini, Salvatore Gennaro, Lia Emanuela Vanzetti, Erica Iacob, Massimo Bersani

Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps

E-MRS Spring Meeting [],

JA Van Den Berg, MA Reading, A Parisini, M Kolbe, B Beckhoff, S Ladas, M Fried, P Petrik, P Bailey, T Noakes, T Conard, S De Gendt

ECS Transactions

Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009-216th ECS Meeting [],

Damiano Giubertoni, Giancarlo Pepponi, B Beckhoff, P Hoenicke, Salvatore Gennaro, Florian Meirer, D Ingerle, G Steinhauser, M Fried, P Petrik, A Parisini, MA Reading, C Streli, JA van den Berg, Massimo Bersani

Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium.

Intel European Research and Innovation Conference 2009 [],

R Rizzoli, R Angelucci, S Guerri, Andrea Parisini, GP Veronese, Vincenzo Vinciguerra, Maria Fortuna Bevilacqua

Carbon nanotubes grown by catalytic CVD on silicon based substrates for electronics applications

Materials science forum [Trans Tech Publications], Volume: 539 Pages: 669-674

Antonella Poggi, Andrea Parisini, Sandro Solmi, Roberta Nipoti

Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 665-668

A Parisini, V Morandi, SA Mezzotero

Thickness effects in Tilted Sample Annular Dark Field Scanning Transmission Electron Microscopy

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany [Springer, Berlin, Heidelberg], Pages: 145-146