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Poggi
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Antonella
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Scientific Productions

C Carbone, E Cozzani, N Zanca, S Zampolli, F Manarini, MC Pietrogrande, A Lupi, M Busetto, A Poggi, S Fuzzi, S Decesari

A novel device foe automatic routine monitoring of PAHs and BC in urban ambient aerosol

EAC 2017 [European Aerosol Society], Pages: 0-0

Sandro Mengali, Nicola Liberatore, Domenico Luciani, Roberto Viola, Gian Carlo Cardinali, Ivan Elmi, Antonella Poggi, Stefano Zampolli, Elisa Biavardi, Enrico Dalcanale, Federica Bonadio, Olivier Delemont, Pierre Esseiva, Francesco S Romolo

Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography

Quantum Sensing and Nanophotonic Devices X [International Society for Optics and Photonics], Volume: 8631 Pages: 86312F

Matteo Bosi, Giovanni Attolini, Bernard Enrico Watts, Alberto Roncaglia, Antonella Poggi, Fulvio Mancarella, Francesco Moscatelli, Luca Belsito, Matteo Ferri

Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 897-900

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S Løvlie, Bengt Gunnar Svensson

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 346-349

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S Løvlie, Bengt Gunnar Svensson

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 326-329

Bernard Enrico Watts, Giovanni Attolini, Francesca Rossi, Matteo Bosi, Giancarlo Salviati, Fulvio Mancarella, Matteo Ferri, Alberto Roncaglia, Antonella Poggi

β-SiC NWs grown on patterned and MEMS silicon substrates

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 508-511

Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti, Aldo Armigliato, Luca Belsito

Nitridation of the SiO2/SiC interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 491-494

Ruggero Anzalone, Massimo Camarda, Daniel Alquier, M Italia, Andrea Severino, Nicolò Piluso, Antonino La Magna, Gaetano Foti, Christopher Locke, Stephen E Saddow, Alberto Roncaglia, Fulvio Mancarella, Antonella Poggi, Giuseppe D'Arrigo, Francesco La Via

Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 865-868

Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 1027-1030

Filippo Fabbri, Francesco Moscatelli, Antonella Poggi, Roberta Nipoti, Anna Cavallini

CV and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+ n 4H-SiC Diodes

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 469-472

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti, Fabrizio Tamarri, G Pizzochero

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 761-764

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Bengt Gunnar Svensson

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 533-536

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 699-702

Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Michele Sanmartin

Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 687-690

Mariaconcetta Canino, Filippo Giannazzo, Fabrizio Roccaforte, Antonella Poggi, Sandro Solmi, Vito Raineri, Roberta Nipoti

Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 571-574

Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti

Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 639-642

Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Roberta Nipoti

Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 651-654

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Passini, Giulio Pizzocchero, Roberta Nipoti

Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 917-920

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Silvio Sciortino, Günter Wagner, Roberta Nipoti

Minimum Ionizing Particle Detector Based on p+ n Junction SiC Diode

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 1469-1472

Roberta Nipoti, Fabio Bergamini, Francesco Moscatelli, Antonella Poggi, Mariaconcetta Canino, Giuseppe Bertuccio

Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 815-818

Antonella Poggi, Francesco Moscatelli, Andrea Scorzoni, Giovanni Marino, Roberta Nipoti, Michele Sanmartin

Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O2 oxidation ambient

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 979-982

Fabio Bergamini, Shailaja P Rao, Antonella Poggi, Fabrizio Tamarri, Stephen E Saddow, Roberta Nipoti

Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 819-822

Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi

Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 811-814

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, R Nipoti

Radiation hardness of minimum ionizing particle detectors based on SiC p/sup+/n junctions

IEEE Nuclear Science Symposium Conference Record, 2005 [IEEE], Volume: 1 Pages: 490-494

Fabio Bergamini, Francesco Moscatelli, Mariaconcetta Canino, Antonella Poggi, Roberta Nipoti

Ar Annealing at 1600° C and 1650° C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing Temperature

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 625-628

Antonella Poggi, Andrea Parisini, Sandro Solmi, Roberta Nipoti

Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 665-668

Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi

n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 649-652

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Mihai Lazar, Annalisa Di Placido, Roberta Nipoti

Measurements of charge collection efficiency of p+/n junction SiC detectors

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 1021-1024

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mariaconcetta Canino, Roberta Nipoti

Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 737-740

Stefania Carapezzi, Antonio Castaldini, Fulvio Mancarella, Antonella Poggi, Anna Cavallini

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices

ACS applied materials & interfaces [American Chemical Society], Volume: 8 Issue: 16 Pages: 10443-10450

F Capozzi, S Giordano, A Di Palma, V Spagnuolo, F De Nicola, P Adamo

Biomonitoring of atmospheric pollution by moss bags: Discriminating urban-rural structure in a fragmented landscape

Chemosphere [Pergamon], Volume: 149 Pages: 211-218

Sandro Mengali, Domenico Luciani, Roberto Viola, Nicola Liberatore, Stefano Zampolli, Ivan Elmi, Giancarlo Cardinali, Antonella Poggi, Enrico Dalcanale, Elisa Biavardi, Pierre Esseiva, Olivier Delemont, Federica Bonadio, Francesco Saverio Romolo

Toward street detection of amphetamines

SPIE Newsroom [Internet] [],

Sandro Mengali, Domenico Luciani, Roberto Viola, Nicola Liberatore, Stefano Zampolli, Ivan Elmi, Giancarlo Cardinali, Antonella Poggi, Enrico Dalcanale, Elisa Biavardi, Pierre Esseiva, Olivier Delemont, Federica Bonadio, Francesco Saverio Romolo

Toward street detection of ampphetamines

SPIE Newsroom [Internet] [],

I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, LS Løvlie, BG Svensson

Analysis of electron traps at the 4 H–SiC/SiO 2 interface; influence by nitrogen implantation prior to wet oxidation

Journal of Applied Physics [AIP], Volume: 108 Issue: 2 Pages: 024503

A Poggi, F Moscatelli, S Solmi, A Armigliato, L Belsito, R Nipoti

Effect of nitrogen implantation at the SiO 2/SiC interface on the electron mobility and free carrier density in 4 H-SiC metal oxide semiconductor field effect transistor channel

Journal of Applied Physics [AIP], Volume: 107 Issue: 4 Pages: 044506

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Passivation by N Implantation of the SiO 2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

I PINTILIE, CM TEODORESCU, F MOSCATELLI, R NIPOT, A POGGI, S SOLMI, LS LØVLIE, BG SVENSSON

Analysis of electron traps at the 4H-SiC

Journal of applied physics [American Institute of Physics], Volume: 108 Issue: 2

Matteo Bosi, Bernard E Watts, Giovanni Attolini, Claudio Ferrari, Cesare Frigeri, Giancarlo Salviati, Antonella Poggi, Fulvio Mancarella, Alberto Roncaglia, Oscar Martínez, Vanesa Hortelano

Growth and characterization of 3C-SiC films for micro electro mechanical systems (MEMS) applications

Crystal Growth & Design [American Chemical Society], Volume: 9 Issue: 11 Pages: 4852-4859

Matteo Bosi, Giovanni Attolini, Bernard E Watts, Cesare Frigeri, Francesca Rossi, Antonella Poggi, Alberto Roncaglia, Fulvio Mancarella, Oscar Martinez, Vanesa Hortelano

Strain Evaluation in SiC MEMS Test Structures

ECS Transactions [The Electrochemical Society], Volume: 25 Issue: 8 Pages: 1031-1037

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Investigation on the use of nitrogen implantation to improve the performance of n-channel enhancement 4H-SiC MOSFETs

IEEE Transactions on Electron Devices [IEEE], Volume: 55 Issue: 8 Pages: 2021-2028

Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti

Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET

IEEE Transactions on Electron Devices [IEEE], Volume: 55 Issue: 4 Pages: 961-967

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 699

Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1027

Francesco Moscatelli, A Scorzoni, A Poggi, R Nipoti

Annealing effects on leakage current and epilayer doping concentration of p+ n junction 4H-SiC diodes after very high neutron irradiation

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 583 Issue: 1 Pages: 173-176

A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti

MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen

Microelectronic Engineering [Elsevier], Volume: 84 Issue: 12 Pages: 2804-2809

F Moscatelli, A Scorzoni, A Poggi, M Passini, G Pizzocchero, R Nipoti

Chapter 5-SiC Devices-5.3 Bipolar Diodes-Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 917-920

Y Hijikata, S Yoshida, F Moscatelli, A Poggi, S Solmi, S Cristiani, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 651-654

A Poggi, F Moscatelli, Y Hijikata, S Solmi, M Sanmartin, F Tamarri, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 639-642

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions

IEEE transactions on nuclear science [IEEE], Volume: 53 Issue: 3 Pages: 1557-1563

A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera

Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions

Applied physics letters [AIP], Volume: 88 Issue: 16 Pages: 162106

F Scorzoni, A Moscatelli, A Bruzzi, M Poggi, S Sciortino, S Lagomarsino, G Nipoti, R Wagner

Part 2-Chapter 6-SiC Devices-6.4 Sensors and Detectors-Minimum Ionizing Particle Detector Based on p+ n Junction SiC Diode

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 1469-1472

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 979-982

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

RADIATION DAMAGE EFFECTS-Radiation Hardness After Very High Neutron Irradiation of Minimum Ionizing Particle Detectors Based on 4H-SiC p+ n Junctions

IEEE Transactions on Nuclear Science [New York, NY: Professional Technical Group on Nuclear Science, c1963-], Volume: 53 Issue: 3 Pages: 1557-1563

Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Roberta Nipoti

Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 546 Issue: 1-2 Pages: 218-221

A Poggi, A Parisini, R Nipoti, S Solmi

Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes

Applied Physics Letters [AIP], Volume: 86 Issue: 12 Pages: 121907

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Lagomarsino, S Mersi, S Sciortino, M Lazar, A Di Placido, R Nipoti

Chapter 6-SiC Devices-6.4 Sensors and Detectors-Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 1021-1024

F Moscatelli, A Scorzoni, A Poggi, M Canino, R Nipoti

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 737-740

M Canino, A Castaldini, A Cavallini, F Moscatelli, R Nipoti, A Poggi

Chapter 5-SiC Technology-5.1 Doping and Implantation-n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 649-652

A Poggi, A Parisini, S Solmi, R Nipoti

Chapter 5-SiC Technology-5.2 Dielectrics and Passivation Layers-Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 665-668

F Bergamini, F Moscatelli, M Canino, A Poggi, R Nipoti

Chapter 5-SiC Technology-5.1 Doping and Implantation-Ar Annealing at 1600 (degree) C and 1650 (degree) C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 625-628

Nicola Liberatore, Domenico Luciani, Sandro Mengali, Roberto Viola, Gian Carlo Cardinali, Ivan Elmi, Antonella Poggi, Stefano Zampolli, Elisa Biavardi, Enrico Dalcanale, Daniela Menozzi

A New Sensitive and Fast Detection System for Amphetamine Type Stimulants (ATS), Based on Gas-Chromatography (GC) and Hollow Fiber Infrared Absorption Spectroscopy (HF-IRAS)

Sensors [Springer, New York, NY], Pages: 177-182

F MOSCATELLI, A SCORZONI, A POGGI, R NIPOTI, A DIPLACIDO, S LAGOMARSINO, M BRUZZI, STEFANO MERSI

PRELIMINARY MEASUREMENTS OF CHARGE COLLECTION OF P+/N JUNCTION SIC DETECTORS AND SIMULATIONS OF SCHOTTKY DIODES

Sensors And Microsystems [], Pages: 468-472

Fulvio Mancarella, Ivan Elmi, Stefano Zampolli, Antonella Poggi, Giancarlo Cardinalli, Maddalena Belluce, Stefano Galli, Mario Galli, Filippo Baravelli

Method For Making A Silicon Separation Microcolumn For Chromatography Or Gas Chromatography

US20140138351 [],