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Surname: 
Poggi
Firstname: 
Antonella
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Staff
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Researcher
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051 6399203 - 051 6399992
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Scientific Productions

C Carbone, E Cozzani, N Zanca, S Zampolli, F Manarini, MC Pietrogrande, A Lupi, M Busetto, A Poggi, S Fuzzi, S Decesari

A novel device foe automatic routine monitoring of PAHs and BC in urban ambient aerosol

EAC 2017 [European Aerosol Society], Pages: 0-0

Sandro Mengali, Nicola Liberatore, Domenico Luciani, Roberto Viola, Gian Carlo Cardinali, Ivan Elmi, Antonella Poggi, Stefano Zampolli, Elisa Biavardi, Enrico Dalcanale, Federica Bonadio, Olivier Delemont, Pierre Esseiva, Francesco S Romolo

Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography

Quantum Sensing and Nanophotonic Devices X [International Society for Optics and Photonics], Volume: 8631 Pages: 86312F

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S Løvlie, Bengt Gunnar Svensson

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 346-349

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S Løvlie, Bengt Gunnar Svensson

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface

Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 326-329

Filippo Fabbri, Francesco Moscatelli, Antonella Poggi, Roberta Nipoti, Anna Cavallini

CV and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+ n 4H-SiC Diodes

Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 469-472

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Bengt Gunnar Svensson

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 533-536

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Passini, Giulio Pizzocchero, Roberta Nipoti

Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 917-920

Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Roberta Nipoti

Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation

Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 651-654

Fabio Bergamini, Shailaja P Rao, Antonella Poggi, Fabrizio Tamarri, Stephen E Saddow, Roberta Nipoti

Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 819-822

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Silvio Sciortino, Günter Wagner, Roberta Nipoti

Minimum Ionizing Particle Detector Based on p+ n Junction SiC Diode

Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 1469-1472

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, R Nipoti

Radiation hardness of minimum ionizing particle detectors based on SiC p/sup+/n junctions

IEEE Nuclear Science Symposium Conference Record, 2005 [IEEE], Volume: 1 Pages: 490-494

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Mihai Lazar, Annalisa Di Placido, Roberta Nipoti

Measurements of charge collection efficiency of p+/n junction SiC detectors

Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 1021-1024

Nicola Liberatore, Domenico Luciani, Sandro Mengali, Roberto Viola, Gian Carlo Cardinali, Ivan Elmi, Antonella Poggi, Stefano Zampolli, Elisa Biavardi, Enrico Dalcanale, Daniela Menozzi

A New Sensitive and Fast Detection System for Amphetamine Type Stimulants (ATS), Based on Gas-Chromatography (GC) and Hollow Fiber Infrared Absorption Spectroscopy (HF-IRAS)

Sensors [Springer, New York, NY], Pages: 177-182

F MOSCATELLI, A SCORZONI, A POGGI, R NIPOTI, A DIPLACIDO, S LAGOMARSINO, M BRUZZI, STEFANO MERSI

PRELIMINARY MEASUREMENTS OF CHARGE COLLECTION OF P+/N JUNCTION SIC DETECTORS AND SIMULATIONS OF SCHOTTKY DIODES

Sensors And Microsystems [], Pages: 468-472

E Susi, A Poggi, R FABBR, M Merli

RTA-induced defects: a comparison between lamp and electron beam techniques

Science and Technology of Defects in Silicon [Elsevier], Volume: 4 Pages: 231-235

Sandro Mengali, Domenico Luciani, Roberto Viola, Nicola Liberatore, Stefano Zampolli, Ivan Elmi, Giancarlo Cardinali, Antonella Poggi, Enrico Dalcanale, Elisa Biavardi, Pierre Esseiva, Olivier Delemont, Federica Bonadio, Francesco Saverio Romolo

Toward street detection of ampphetamines

SPIE Newsroom [Internet] [],

Sandro Mengali, Domenico Luciani, Roberto Viola, Nicola Liberatore, Stefano Zampolli, Ivan Elmi, Giancarlo Cardinali, Antonella Poggi, Enrico Dalcanale, Elisa Biavardi, Pierre Esseiva, Olivier Delemont, Federica Bonadio, Francesco Saverio Romolo

Toward street detection of amphetamines

SPIE Newsroom [Internet] [],

I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, LS Løvlie, BG Svensson

Analysis of electron traps at the 4 H–SiC/SiO 2 interface; influence by nitrogen implantation prior to wet oxidation

Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 2 Pages: 024503

I PINTILIE, CM TEODORESCU, F MOSCATELLI, R NIPOT, A POGGI, S SOLMI, LS LØVLIE, BG SVENSSON

Analysis of electron traps at the 4H-SiC

Journal of applied physics [American Institute of Physics], Volume: 108 Issue: 2

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Passivation by N Implantation of the SiO 2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Investigation on the use of nitrogen implantation to improve the performance of n-channel enhancement 4H-SiC MOSFETs

IEEE transactions on electron devices [IEEE], Volume: 55 Issue: 8 Pages: 2021-2028

Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti

Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET

IEEE Transactions on Electron Devices [IEEE], Volume: 55 Issue: 4 Pages: 961-967

Francesco Moscatelli, A Scorzoni, A Poggi, R Nipoti

Annealing effects on leakage current and epilayer doping concentration of p+ n junction 4H-SiC diodes after very high neutron irradiation

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 583 Issue: 1 Pages: 173-176

A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti

MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen

Microelectronic engineering [Elsevier], Volume: 84 Issue: 12 Pages: 2804-2809

Y Hijikata, S Yoshida, F Moscatelli, A Poggi, S Solmi, S Cristiani, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 651-654

F Moscatelli, A Scorzoni, A Poggi, M Passini, G Pizzocchero, R Nipoti

Chapter 5-SiC Devices-5.3 Bipolar Diodes-Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 917-920

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions

IEEE transactions on nuclear science [IEEE], Volume: 53 Issue: 3 Pages: 1557-1563

F Scorzoni, A Moscatelli, A Bruzzi, M Poggi, S Sciortino, S Lagomarsino, G Nipoti, R Wagner

Part 2-Chapter 6-SiC Devices-6.4 Sensors and Detectors-Minimum Ionizing Particle Detector Based on p+ n Junction SiC Diode

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 1469-1472

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

RADIATION DAMAGE EFFECTS-Radiation Hardness After Very High Neutron Irradiation of Minimum Ionizing Particle Detectors Based on 4H-SiC p+ n Junctions

IEEE Transactions on Nuclear Science [New York, NY: Professional Technical Group on Nuclear Science, c1963-], Volume: 53 Issue: 3 Pages: 1557-1563

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 979-982

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Roberta Nipoti

Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 546 Issue: 1-2 Pages: 218-221

A Poggi, A Parisini, R Nipoti, S Solmi

Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes

Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 12 Pages: 121907

A Poggi, A Parisini, S Solmi, R Nipoti

Chapter 5-SiC Technology-5.2 Dielectrics and Passivation Layers-Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 665-668

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Lagomarsino, S Mersi, S Sciortino, M Lazar, A Di Placido, R Nipoti

Chapter 6-SiC Devices-6.4 Sensors and Detectors-Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 1021-1024

Fulvio Mancarella, Ivan Elmi, Stefano Zampolli, Antonella Poggi, Giancarlo Cardinalli, Maddalena Belluce, Stefano Galli, Mario Galli, Filippo Baravelli

Method For Making A Silicon Separation Microcolumn For Chromatography Or Gas Chromatography

US20140138351 [],