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Semiconductor materials and devices. The main present research field regards semiconductor nanowires: growth, structural and electronic properties. https://unit.artov.imm.cnr.it/articles/semiconductor-nanowires
Scientific Productions
ACS Applied Nano Materials [American Chemical Society],
Band Structure and Exciton Dynamics in Quasi‐2D Dodecylammonium Halide Perovskites
Advanced Optical Materials [], Pages: 2201874
Reevaluation of Photoluminescence Intensity as an Indicator of Efficiency in Perovskite Solar Cells
Solar RRL [], Volume: 6 Issue: 8 Pages: 2200049
Role of phase nanosegregation in the photoluminescence spectra of halide perovskites
The journal of physical chemistry letters [American Chemical Society], Volume: 12 Issue: 48 Pages: 11659-11665
Nano Letters [American Chemical Society], Volume: 21 Issue: 19 Pages: 8527-8527
Influence of diameter on temperature dynamics of hot carriers in photoexcited GaAsP nanowires
Physical Review B [American Physical Society], Volume: 104 Issue: 4 Pages: 045423
Systematic approach to the study of the photoluminescence of
Physical Review Materials [American Physical Society], Volume: 5 Issue: 3 Pages: 035409
Diameter dependence of the temperature dynamics of hot carriers in photoexcited GaAsP nanowires
arXiv preprint arXiv:2102.05471 [],
Optical properties and carrier dynamics in Co-doped ZnO nanorods
Nanoscale Advances [RSC], Volume: 3 Issue: 1 Pages: 214-222
Correction: Optical properties and carrier dynamics in Co-doped ZnO nanorods
Nanoscale Advances [Royal Society of Chemistry], Volume: 3 Issue: 2 Pages: 618-618
Energies [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 3 Pages: 708
Broadband optical ultrafast reflectivity of Si, Ge and GaAs
Scientific Reports [Nature Publishing Group], Volume: 10 Issue: 1 Pages: 1-9
Ultrafast optical spectroscopy of semiconducting and plasmonic nanostructures and their hybrids
Nanotechnology [IOP Publishing], Volume: 32 Issue: 2 Pages: 025703
Photoluminescence of MAPbI: a semiconductor science and technology point of view
arXiv preprint arXiv:2008.09009 [],
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs
The Journal of Physical Chemistry C [American Chemical Society], Volume: 124 Issue: 32 Pages: 17783-17794
ACS applied nano materials [American Chemical Society], Volume: 3 Issue: 8 Pages: 7781-7788
Ultrafast Formation of Small Polarons and the Optical Gap in CeO2
The Journal of Physical Chemistry Letters [American Chemical Society], Volume: 11 Issue: 14 Pages: 5686-5691
Plasmon induced resonant effects on the optical properties of Ag-decorated ZnSe nanowires.
Nanotechnology [IOP Publishing], Volume: 31 Issue: 17 Pages: 174001
Optical Characterization of Cesium Lead Bromide Perovskites
Crystals [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 6 Pages: 280
Nanotechnology [IOP Publishing], Volume: 30 Issue: 21 Pages: 214001
Graphene-induced improvements of perovskite solar cell stability: effects on hot-carriers.
Nano letters [American Chemical Society], Volume: 19 Issue: 2 Pages: 684-691
Physical Review B [American Physical Society], Volume: 97 Issue: 11 Pages: 115448
Nano letters [American Chemical Society], Volume: 17 Issue: 11 Pages: 6540-6547
Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy
Applied Surface Science [North-Holland], Volume: 386 Pages: 72-77
Ultrafast carrier dynamics, band-gap renormalization, and optical properties of ZnSe nanowires
Physical Review B [American Physical Society], Volume: 94 Issue: 16 Pages: 165442
Long-lived hot carriers in III–V nanowires
Nano letters [American Chemical Society], Volume: 16 Issue: 5 Pages: 3085-3093
Advanced Functional Materials [], Volume: 26 Issue: 17 Pages: 2836-2845
Direct growth of Si nanowires on flexible organic substrates
Nanotechnology [IOP Publishing], Volume: 27 Issue: 22 Pages: 225601
Ultrafast optical response in Au and Ag nanoparticles formed on silica nanowires arrays
Physics and technology of nanostructured materials for photonic applications has become an important area of research that is poised to transform ongoing technologies and ultimately our everyday life in the future. Synthesis, modeling and characterization [], Pages: 62
Ultrafast optical response in Au and Ag nanoparticles formed on silica nanowires arrays
Physics and technology of nanostructured materials for photonic applications has become an important area of research that is poised to transform ongoing technologies and ultimately our everyday life in the future. Synthesis, modeling and characterization [], Pages: 62
Semiconductor Science and Technology [IOP Publishing], Volume: 30 Issue: 5 Pages: 055020
Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 24 Pages: 245304
Journal of Applied Physics [], Volume: 116 Issue: 24
Journal of Applied Physics [], Volume: 116 Issue: 24
Physical Review Applied [American Physical Society], Volume: 2 Issue: 6 Pages: 064007
Electronic properties of Si hollow nanowires
Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 17 Pages: 174310
Single photons on demand from novel site-controlled GaAsN/GaAsN: H quantum dots
Nano letters [American Chemical Society], Volume: 14 Issue: 3 Pages: 1275-1280
The Journal of Physical Chemistry C [American Chemical Society], Volume: 118 Issue: 1 Pages: 685-690
Tuning the growth mode of nanowires via the interaction among seeds, substrates and beam fluxes
Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 14 Pages: 8392-8399
ACS nano [American Chemical Society], Volume: 7 Issue: 12 Pages: 10717-10725
The Journal of Physical Chemistry C [American Chemical Society], Volume: 118 Issue: 1 Pages: 685-690
Strong blue emission from ZnSe nanowires grown at low temperature
physica status solidi (RRL)-Rapid Research Letters [WILEY‐VCH Verlag],
Excitonic recombination and absorption in In x Ga 1− x As/GaAs heterostructure nanowires
Physical Review B [American Physical Society], Volume: 87 Issue: 23 Pages: 235304
Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 17 Pages: 173102
An all optical mapping of the strain field in GaAsN/GaAsN: H wires
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 19 Pages: 191908
Band-gap profiling by laser writing of hydrogen-containing III-N-Vs
Physical Review B [American Physical Society], Volume: 86 Issue: 15 Pages: 155307
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 11 Pages: 111912
On-chip fabrication of ultrasensitive NO2 sensors based on silicon nanowires
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 10 Pages: 103101
Physical Review B [American Physical Society], Volume: 86 Issue: 8 Pages: 085206
Nanotechnology [IOP Publishing], Volume: 23 Issue: 30 Pages: 305602
The Mn site in Mn-doped GaAs nanowires: an EXAFS study
Semiconductor Science and Technology [IOP Publishing], Volume: 27 Issue: 8 Pages: 085001
Optical reflectivity of GaAs nanowire arrays: experiment and model
Journal of Applied Physics [American Institute of Physics], Volume: 111 Issue: 11 Pages: 114302
Physical Review B-Condensed Matter and Materials Physics [American Institute of Physics Publising LLC], Volume: 86 Issue: 8 Pages: 085206-1-085206-6
Physical Review B [American Physical Society], Volume: 84 Issue: 8 Pages: 085331
Laser writing of the electronic activity of N-and H-atoms in GaAs
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 2 Pages: 021105
Imaging with low-voltage scanning transmission electron microscopy: A quantitative analysis
Ultramicroscopy [North-Holland], Volume: 111 Issue: 8 Pages: 1018-1028
Advanced Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 24 Pages: 2706-2710
Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 12 Pages: 123511
On the growth of InAs nanowires by molecular beam epitaxy
Journal of crystal growth [North-Holland], Volume: 323 Issue: 1 Pages: 297-300
Photoluminescence of CdSe nanowires grown with and without metal catalyst
Nano Research [Tsinghua Press], Volume: 4 Issue: 4 Pages: 343-359
Laser writing of the electronic activity of N-and H-atoms in GaAs
Applied Physics Letters [American Institute of Physics Publising LLC], Volume: 99 Issue: 2
Atomic structure of metal-free and catalyzed Si nanowires
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1305
InGaAs/GaAs core–shell nanowires grown by molecular beam epitaxy
IEEE Journal of Selected Topics in Quantum Electronics [IEEE], Volume: 17 Issue: 4 Pages: 794-800
InGaAs/GaAs core–shell nanowires grown by molecular beam epitaxy
IEEE Journal of Selected Topics in Quantum Electronics [IEEE], Volume: 17 Issue: 4 Pages: 794-800
Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires
Nano Research [Tsinghua Press], Volume: 3 Issue: 10 Pages: 706-713
Optical reflectivity from highly disordered Si nanowire films
Nanotechnology [IOP Publishing], Volume: 21 Issue: 35 Pages: 355701
Physical Review B [American Physical Society], Volume: 81 Issue: 23 Pages: 235327
Physical Review B [American Physical Society], Volume: 81 Issue: 23 Pages: 233201
Mn-induced growth of InAs nanowires
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 28 Issue: 3 Pages: 478-483
APS March Meeting Abstracts [], Volume: 2010 Pages: P25. 001
Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires
Journal of applied physics [American Institute of Physics], Volume: 106 Issue: 11 Pages: 114317
Hydrogen diffusion in GaAs 1− x N x
Physical Review B [American Physical Society], Volume: 80 Issue: 19 Pages: 195206
Light polarization control in strain-engineered GaAsN/GaAsN: H heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 26 Pages: 261905
Local structure of nitrogen-hydrogen complexes in dilute nitrides
Physical Review B [American Physical Society], Volume: 79 Issue: 16 Pages: 165205
Growth of III–V semiconductor nanowires by molecular beam epitaxy
Microelectronics Journal [Elsevier], Volume: 40 Issue: 3 Pages: 442-445
Hydrogen diffusion in GaAs1− xNx
PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS [], Volume: 80 Issue: 19 Pages: 195206
Magnetotransport in MBE-grown III-V nanowires
Program and Abstracts 14th International Conference on Modulated Semiconductor Structures [], Volume: 1 Issue: M4 Pages: 75
Magnetotransport in MBE-grown III-V nanowires
Program and Abstracts 14th International Conference on Modulated Semiconductor Structures [], Volume: 1 Issue: M4 Pages: 75
Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 10 Pages: 104311
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 10 Pages: 102116
Room temperature luminescent InGaAs/GaAs core-shell nanowires
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 8 Pages: 083117
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures
Applied Physics Letters [AIP], Volume: 92 Issue: 22 Pages: 221901-221901-3
Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
Nanotechnology [IOP Publishing], Volume: 19 Issue: 27 Pages: 275711
Journal of Applied Crystallography [International Union of Crystallography], Volume: 41 Issue: 2 Pages: 366-372
Physical Review B [American Physical Society], Volume: 77 Issue: 8 Pages: 085213
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 205 Issue: 1 Pages: 107-113
Formation and dissolution of DN complexes in dilute nitrides
Physical Review B [American Physical Society], Volume: 76 Issue: 20 Pages: 205323
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 204 Issue: 8 Pages: 2766-2771
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys
AIP Conference Proceedings [American Institute of Physics], Volume: 893 Issue: 1 Pages: 155-156
AIP Conference Proceedings [AIP], Volume: 893 Issue: 1 Pages: 157-158
In‐Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors
AIP Conference Proceedings [American Institute of Physics], Volume: 893 Issue: 1 Pages: 31-32
Fabrication And Characterization Of Mn‐catalyzed GaAs Nanowires
AIP Conference Proceedings [American Institute of Physics], Volume: 893 Issue: 1 Pages: 59-60
GaAs nanowires by Mn-catalysed molecular beam epitaxy
Journal of Physics: Conference Series [IOP Publishing], Volume: 61 Issue: 1 Pages: 196
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 37 Issue: 1-2 Pages: 134-137
Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN
Applied Physics Letters [American Institute of Physics], Volume: 90 Issue: 9 Pages: 091907
Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy
Nanotechnology [IOP Publishing], Volume: 18 Issue: 12 Pages: 125603
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 994
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in Ga As 1− x N x
Physical Review B [American Physical Society], Volume: 74 Issue: 24 Pages: 245202
Manganese-induced growth of GaAs nanowires
Nano Letters [American Chemical Society], Volume: 6 Issue: 9 Pages: 2130-2134
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 6 Pages: 061904
In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors
Advanced Materials [WILEY‐VCH Verlag], Volume: 18 Issue: 15 Pages: 1993-1997
Semiconductor science and technology [IOP Publishing], Volume: 21 Issue: 8 Pages: 1207
Nitrogen-induced hindering of In incorporation in InGaAsN
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 14 Pages: 141923
Catalyst incorporation in ZnSe nanowires
Philosophical magazine letters [Taylor & Francis Group], Volume: 86 Issue: 04 Pages: 261-266
Physical Review B [American Physical Society], Volume: 73 Issue: 7 Pages: 073201
Physical Review B [American Physical Society], Volume: 72 Issue: 7 Pages: 075311
InAsN∕ GaAs (N) quantum-dot and InGaNAs∕ GaAs quantum-well emitters: A comparison
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 23 Pages: 233107
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 15 Pages: 153103
Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy
Nanotechnology [IOP Publishing], Volume: 16 Issue: 5 Pages: S139
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) [IEEE], Pages: 1-2
International Conference on Transparent Optical Networks
IEEE Computer Society [],
2015 17th International Conference on Transparent Optical Networks (ICTON) [IEEE], Pages: 1-4
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs
SIMS XVII-17th International Conference on Secondary Ion Mass Spectrometry [],
Epioptics-9 [], Pages: 156-161
Raman scattering from GaAs nanowires grown by molecular beam epitaxy
Advanced Materials Research [Trans Tech Publications Ltd], Volume: 31 Pages: 23-26
28th International Conference on the Physics of Semiconductors, ICPS 2006 [],
28th International Conference on the Physics of Semiconductors, ICPS 2006 [],
Growth of semiconductor nanowires by molecular beam epitaxy
Molecular Beam Epitaxy [Mohamed Henini],
Optical determination of strain field in GaAsN/GaAsN: H planar heterostructures
FisMat2013 book of abstracts [], Pages: 183
Growth of semiconductor nanowires by molecular beam epitaxy
Molecular Beam Epitaxy [Mohamed Henini],
Advances in III-V semiconductor nanowires and nanodevices
[Bentham Science Publishers],
Advances in III-V Semiconductor Nanowires and Nanodevices [Bentham],
Advances in III-V Semiconductor Nanowires and Nanodevices [Bentham],
Phonon Confinement Effect in III-V Nanowires
[BoD–Books on Demand],
Phonon Confinement Effect in III-V Nanowires
Nanowires [Intech], Pages: 255-272
Phonon Confinement Effect in III-V Nanowires
Nanowires [Intech], Pages: 255-272
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence
Microscopy of Semiconducting Materials 2007 [Springer, Dordrecht], Pages: 453-458
Secondary Electrons Characterization of Hydrogenated Dilute Nitrides
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany [Springer, Berlin, Heidelberg], Pages: 541-542
EPIOPTICS-9 [], Pages: 156-161
Low-voltage Scanning Transmission Electron Microscopy of InGaAs nanowires
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany [Springer, Berlin, Heidelberg], Pages: 539-540