Primary tabs
Roberta Nipoti took a MS in Solid State Physics “cum laudae” at the University of Bologna in 1979. She was employed as researcher at the Italian National Council of Research (CNR) from 1984 to 2021. From 2022 she is on pension and still active as part-time senior associate researcher at CNR-IMM of Bologna (Italy). Her experience and expertise include the ion beam processing, the ion beam analysis, and the electrical characterizations of semiconductor materials for solid state electronics. Presently, she works on Silicon Carbide for power electronics in studies about the electrical doping on selected areas by ion implantation and the measurements of carrier lifetime in the drift layer of p-i-n diodes by the Open Circuit Voltage Decay (OCVD) technique.
Scientific Productions
The effects of different anode manufacturing methods on deep levels in 4H-SiC p+ n diodes
Journal of Applied Physics [AIP Publishing], Volume: 135 Issue: 23
IEEE Access [IEEE],
Investigating Mesa Structure Impact on CV Measurements
IEEE Access [IEEE],
Native Silicon Oxide Properties Determined by Doping
Langmuir [American Chemical Society], Volume: 39 Issue: 35 Pages: 12430-12451
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
MRS Advances [Springer International Publishing], Pages: 1-6
Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC
physica status solidi (b) [], Pages: 2200210
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 241-245
Status of 3C-SiC Growth and Device Technology
Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications [John Wiley & Sons],
IEEE Transactions on Electron Devices [IEEE],
4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap
Journal of Microscopy [], Volume: 280 Issue: 3 Pages: 229-240
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 698-704
3× 1018-1× 1019 cm-3 Al+ ion implanted 4H-SiC: annealing time effect
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 683-688
Al+ Ion Implanted 4H-SiC: Electrical Activation versus Annealing Time
ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1360
1300° C Annealing of 1× 1020 cm− 3 Al+ Ion Implanted 3C-SiC/Si
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 8 Issue: 9 Pages: P480
Al+ Ion Implanted 4H-SiC: Electrical Activation versus Annealing Time
ECS Transactions [IOP Publishing], Volume: 92 Issue: 7 Pages: 91
The Role of Defects on Forward Current in 4H-SiC pin Diodes
IEEE Transactions on Electron Devices [IEEE], Volume: 66 Issue: 7 Pages: 3028-3033
Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing
ECS Transactions [IOP Publishing], Volume: 86 Issue: 12 Pages: 91
Materials Science Forum [], Volume: 924
IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635
Materials Science Forum [], Volume: 924 Pages: 913
IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635
IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635
ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1323
Ni-Al-Ti Ohmic Contacts on 1 x 1020 cm-3 Al+ Ion Implanted 4H-SiC
ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1326
ECS Transactions [IOP Publishing], Volume: 80 Issue: 7 Pages: 101
Ni-Al-Ti Ohmic Contacts on 1 x 1020 cm-3 Al+ Ion Implanted 4H-SiC
ECS Transactions [IOP Publishing], Volume: 80 Issue: 7 Pages: 117
Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect
Journal of Applied Physics [AIP Publishing LLC], Volume: 122 Issue: 2 Pages: 025701
IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 6 Pages: 2572-2578
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 29 Issue: 3 Pages: 035703
MRS Advances [Springer International Publishing], Volume: 1 Issue: 54 Pages: 3637-3642
Sympathetic Cooling of 40Ca+− 27Al+ Ion Pair Crystal in a Linear Paul Trap
Chinese Physics Letters [IOP Publishing], Volume: 33 Issue: 10 Pages: 103701
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 5 Issue: 10 Pages: P621
ECS Transactions [IOP Publishing], Volume: 75 Issue: 12 Pages: 171
ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 12 Pages: 171-181
1950° C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 5 Issue: 9 Pages: P534
1950° C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 523-526
Applied Physics Letters [AIP Publishing LLC], Volume: 107 Issue: 25 Pages: 252102
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035101
MRS Online Proceedings Library [Springer International Publishing], Volume: 1693 Issue: 1 Pages: 131-136
Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication
Journal of electronic materials [Springer US], Volume: 43 Issue: 4 Pages: 843-849
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 1 Pages: 012005
Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 24 Pages: 243703
On the crossing-point of 4H-SiC power diodes characteristics
IEEE Electron Device Letters [IEEE], Volume: 35 Issue: 2 Pages: 244-246
On the crossing-point of 4H-SiC power diodes characteristics
IEEE Electron Device Letters [IEEE], Volume: 35 Issue: 2 Pages: 244-246
Basal Plane Dislocation Mitigation Using High Temperature Annealing in 4H-SiC Epitaxy
ECS Transactions [IOP Publishing], Volume: 58 Issue: 4 Pages: 325
IEEE electron device letters [IEEE], Volume: 34 Issue: 8 Pages: 966-968
Al+ implanted anode for 4H-SiC pin diodes
ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 391
Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC
Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 17
ECS Meeting Abstracts [IOP Publishing], Issue: 30 Pages: 2562
Fully implanted vertical p–i–n diodes using high-purity semi-insulating 4H–SiC wafers
Semiconductor Science and Technology [IOP Publishing], Volume: 27 Issue: 5 Pages: 055005
Journal of electronic materials [Springer US], Volume: 41 Issue: 3 Pages: 457-465
Microwave annealing of very high dose aluminum-implanted 4H-SiC
Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 111301
Microwave Annealing of Ion Implanted 4H‐SiC
AIP Conference Proceedings [American Institute of Physics], Volume: 1321 Issue: 1 Pages: 241-244
Carbon-cap for ohmic contacts on ion-implanted 4H–SiC
Electrochemical and Solid State Letters [IOP Publishing], Volume: 13 Issue: 12 Pages: H432
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 2 Pages: 024503
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 4 Pages: 044506
Simulation analysis of a 4H-SiC BMFET power transistor with normally-off characteristics
The 8th European Conference on Silicon Carbide and Related Materials (ECSCRM), Oslo, Norway [],
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246
Superlattices and Microstructures [Academic Press], Volume: 45 Issue: 4-5 Pages: 383-387
Microelectronics journal [Elsevier], Volume: 39 Issue: 12 Pages: 1594-1599
IEEE transactions on electron devices [IEEE], Volume: 55 Issue: 8 Pages: 2021-2028
Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET
IEEE Transactions on Electron Devices [IEEE], Volume: 55 Issue: 4 Pages: 961-967
Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 699
Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1027
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 583 Issue: 1 Pages: 173-176
Microelectronics Journal [Elsevier], Volume: 38 Issue: 12 Pages: 1273-1279
MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen
Microelectronic engineering [Elsevier], Volume: 84 Issue: 12 Pages: 2804-2809
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 5 Pages: 054513
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 683-686
Microelectronic Engineering [], Volume: 84 Issue: 12 Pages: 2804-2809
Microelectronics journal [], Volume: 38 Issue: 12 Pages: 1273-1279
Diamond and related materials [Elsevier], Volume: 16 Issue: 1 Pages: 6-11
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 639-642
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 651-654
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 917-920
IEEE transactions on nuclear science [IEEE], Volume: 53 Issue: 3 Pages: 1557-1563
Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 16 Pages: 162106
Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus
Applied surface science [North-Holland], Volume: 252 Issue: 10 Pages: 3837-3842
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 839-842
IEEE Transactions on Nuclear Science [New York, NY: Professional Technical Group on Nuclear Science, c1963-], Volume: 53 Issue: 3 Pages: 1557-1563
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 979-982
Appl. Phys. Lett [], Volume: 89 Pages: 222103
Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 546 Issue: 1-2 Pages: 218-221
Applied Physics Letters [AIP Publishing], Volume: 86 Issue: 12
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 665-668
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 625-628
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 1021-1024
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 737-740
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 649-652
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 629-632
Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 235-240
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 263-267
236th ECS Meeting (October 13-17, 2019) [ECS],
1300° C Annealing of 1× 1020 Al+ Ion Implanted 3C-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 420-423
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 416-419
Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC (Al)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 318-323
Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 385-388
Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 233-236
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 333-338
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 385-388
232nd ECS Meeting (October 1-5, 2017), [ECS],
232nd ECS Meeting (October 1-5, 2017), [ECS],
DLTS study on Al+ ion implanted and 1950° C annealed pin 4H-SiC vertical diodes
Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 279-282
Point defects investigation of high energy proton irradiated SiC p+-in diodes
Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 246-249
Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 391-394
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 439-442
Point defects investigation of high energy proton irradiated SiC p+-in diodes
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 246-249
Formation of D-center in p-type 4H-SiC epi-layers during high temperature treatments
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 262-265
DLTS study on Al+ ion implanted and 1950 C annealed pin 4H-SiC vertical diodes
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 279-282
PRiME 2016/230th ECS Meeting (October 2-7, 2016) [Ecs],
Formation of D-center in p-type 4H-SiC epi-layers during high temperature treatments
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Formation and Annihilation of Carbon Vacancies in 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 331-336
Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 773-776
Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 414-417
High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 283-286
2015 XVIII AISEM Annual Conference [IEEE], Pages: 1-3
Temperature sensor based on 4H-SiC diodes for hostile environments
2015 XVIII AISEM Annual Conference [IEEE], Pages: 1-4
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 628-631
Al+ Ion Implanted On-Axis< 0001> Semi-Insulating 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 399-402
About the hole transport analysis in heavy doped p-type 4H-SiC (Al)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 416-419
SiC device manufacturing: how processing impacts the material and device properties
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 381-386
Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 620-623
Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 351-354
2014 20th International Conference on Ion Implantation Technology (IIT) [IEEE], Pages: 1-4
Microwave annealing of al+ implanted 4h-sic: Towards device fabrication
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 653-656
Post-growth reduction of basal plane dislocations by high temperature annealing in 4H-SiC epilayers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 324-327
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 657-660
Al+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 767-772
Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 942-945
Fully Ion Implanted Vertical pin Diodes on High Purity Semi-Insulating 4H-SiC Wafers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 985-988
Simulation of the temperature dependence of Hall carriers in Al doped 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 237-240
High dose Al+ implanted and microwave annealed 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 817-820
Numerical simulations of a 4H-SiC BMFET power transistor with normally-off characteristics
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 621-624
2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 421-424
Improving doping efficiency of P+ implanted ions in 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 393-396
Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 504-507
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 346-349
The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 326-329
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 397-400
Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 709-712
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 491-494
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting [IEEE], Pages: 210-213
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 533-536
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 699-702
Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 1027-1030
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 469-472
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 687-690
Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 761-764
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 639-642
Post-implantation annealing of SiC: relevance of the heating rate
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 561-566
Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 917-920
X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 683-686
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 651-654
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 819-822
Simulation study and design considerations for an 4H-SiC aluminium implanted pin diode
ECSCRM 2006 [],
Minimum Ionizing Particle Detector Based on p+ n Junction SiC Diode
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 1469-1472
Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 815-818
Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 811-814
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O2 oxidation ambient
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 979-982
Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient
International Conference on Silicon Carbide and Related Materials 2005 [], Volume: 527 Pages: 815-818
Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 839-842
Radiation hardness of minimum ionizing particle detectors based on SiC p/sup+/n junctions
IEEE Nuclear Science Symposium Conference Record, 2005 [IEEE], Volume: 1 Pages: 490-494
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 665-668
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 625-628
JV Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600° C
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 629-632
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 649-652
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 737-740
Measurements of charge collection efficiency of p+/n junction SiC detectors
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 1021-1024
Silicon Carbide and Related Materials 2015
[Trans Tech Publications Ltd],
Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications
Proceedings of the 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 [],
Preparation of Ni2Si contacts: effect on SiC diode operation
J Mater Sci: Mater Electr. [Springer Science+ Business Media, LLC 2008], Volume: 19 Pages: 24-28
Annealing effects on p+ n junction 4H-SiC diodes after very high neutron irradiation
Radiation Effects On Components And Systems RADECS 2006 Workshop [],
Sensors And Microsystems [], Pages: 468-472